Untitled
Abstract: No abstract text available
Text: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for
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UC1610
UC3610
SLUS339B
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
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DD1200S33KL2C
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M8 3F
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
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DD1200S33KL2C
M8 3F
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
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DD1200S33KL2C
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
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DD1200S33KL2C
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DIN 16901 130
Abstract: SQH5
Text: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS300R12KE3
DIN 16901 130
SQH5
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25B22
Abstract: FS150R12KE3G DIN 16901 130 cn7a
Text: Technische Information / technical information FS150R12KE3G IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS150R12KE3G
25B22
FS150R12KE3G
DIN 16901 130
cn7a
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FS450R12KE3
Abstract: No abstract text available
Text: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FS450R12KE3
FS450R12KE3
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF100R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und EmCon4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter
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FF100R12MT4
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DF600R12IP4D
Abstract: diode 9-f 1N6760
Text: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode
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DF600R12IP4D
DF600R12IP4D
diode 9-f
1N6760
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J3j DIODE ST
Abstract: FZ900R12KE4 dz 300
Text: Technische Information / technical information FZ900R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode * + , (-./ 0
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FZ900R12KE4
J3j DIODE ST
FZ900R12KE4
dz 300
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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MTX70A
Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35
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3s300A
ZG50HFL120C1S
SKM75GB128DN
BSM50GB120DLC
ZG75HFL120C1S
SKM100GB128DN
BSM75GB120DLC
ZG100HFL120C1S
SKM145GB128DN
BSM100GB120DLCK
MTX70A
FF300R12KS4
MOTOR SOFT START
MDS100
mfq 60A
bridge rectifier SSC
AC welder IGBT circuit
ZG300HFL120C2S
3phase bridge diode mds 60
SKM200GB125DN
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Untitled
Abstract: No abstract text available
Text: 3A 10 0 V Diode 1/4 S M D Type : Type : NSD03A10 Nihon Inter Electronics Corporation Contraction: Surface Mounting,Diffusion-type Silicon Diode ± û.2 2j ffljfe : Application : Rectification of Power Sourses 0 ./& Í 7 .0 *z Ai 0 O 3 A T 3! S ^ 'DC AL
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NSD03A10
NSD03A10
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ESC021M-15
Abstract: No abstract text available
Text: ESC021M-15 5 a FAST RECOVERY DIODE ' Features D am per diode for high definition TV and high resolution display. Dam per and modulater diode are jointed in a body. • W )tt\1W fibVkZtifc.7iV*-i\rY9'4'7 Insulated package by fully molding. m m m &m Connection Diagram
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ESC021M-15
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ESC021M-15
Abstract: T-fl-30
Text: ESC021M-15 5a FAST RECOVERY DIODE ' Features D am per diode for high definition TV and high resolution display. Dam per and modulater diode are jointed in a body. • W)tt\1WfibVkZtifc.7iV*-i\rY9'4'7 Insulated package by fully molding. m m m &m • ¿U-JfctDfcabiilEA* *.'
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ESC021M-15
T-fl-30
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Untitled
Abstract: No abstract text available
Text: HYBRID I.C.S "Hi-Net" n ic R ic o n Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general
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ZHLA0651
ZHMA0425
MA425
ZHMA042S
MA426
ZHLA0652
ZHLA0653
ZHMA0427
MA427
ZHLA0654
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UPP1004
Abstract: UPP1001 UPP1002 APP1004
Text: m m m Wturtown, HA m Micnosemi SURFACE MOUNT PACKAGE PIN DIODE 400 V 2.5 WATT Commercial Two-Way Radio Antenna Switch Diode UPP1001 UPP1002 UPP1004 FEATURES DESCRIPTION . . . . With high isolation, low loss, and low distortion characteristics, this Hicroseii P o w e n i t e PIN diode is perfect for two-way radio antenna switch
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UPP1001
UPP1002
UPP1004
100MHz,
UPP1001,
UPP10D1,
UPP1001
UPP1002
APP1004
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NEC NDL1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 0 0 0 nm.
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NDL1202
NDL1202
tj427S2S
19S7M
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tes 1310
Abstract: No abstract text available
Text: DATA SHEET NEC LASER DIODE MODULE N D L5733P RECTBON DEVICE 1 310nm InGaAsP DC-PBH LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESCRIPTIO N NDL5733P is a 1310 nm laser diode DIP m odule w ith singlemode fib e r and internal therm o-electric cooler. It is designed fo r a
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L5733P
310nm
NDL5733P
NDL5717P
NDL5720P
NDL5731P
NOL5733P
NDL5735PA
NDL5736PA
NDL5730P
tes 1310
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L5070
Abstract: LS061 L7s00 dl7550
Text: DATA SHEET NEC LASER DIODE MODULE N D L7550P ELECTRON DEVICE 1 5 5 0 nm InGaAsP MQW-DC-PBH-PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESC R IPTIO N N DL7550P is a 1 550 nm pulsed laser diode, that has a newly developed Multi-Quantum Well MQW structure, D IP module
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L7550P
DL7550P
LS061
L5765P1
L5070
L5071
L5775P1
L7s00
dl7550
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se3-13
Abstract: No abstract text available
Text: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.
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SE313
SE313
se3-13
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC ELECTRON DEVICE LASER DIODE MODULE ND L5603P 1 3 1 0 nm O PTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5603P is a 1 3 1 0 nm phase-shifted D F 6 Distributed Feed-Back laser diode Butterfly package module with optical isola
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L5603P
NDL5603P
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