biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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GP-30DL
Abstract: 30DL
Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS
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GP30DLH
GP30MLH
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
GP-30DL
30DL
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Untitled
Abstract: No abstract text available
Text: DNA3865-01 Diodes RF Noise Generator Diode Semiconductor MaterialSilicon Package StyleMicro-I Mounting StyleS Description100MHz to 18GHz;30dB typical noise ratio;800mW max power consumption
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DNA3865-01
Description100MHz
18GHz
800mW
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Untitled
Abstract: No abstract text available
Text: BAV84 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleDO-35 Mounting StyleT DescriptionMatched pair;F .30dB;ZiF 25ohm;VBR 25V;F 7.5dB;ZiF 100 300ohm.
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BAV84
StyleDO-35
25ohm
300ohm.
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PI-810
Abstract: 3530MHz PI-820 MCE 2000
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-810
PI-820
PI-810
3530MHz
MCE 2000
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27K resistor datasheet
Abstract: CHE1270a98F
Text: CHE1270a RoHS COMPLIANT 10-44GHz Wide Band Detector GaAs Monolithic Microwave IC Description RF IN Matching The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref).
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CHE1270a
10-44GHz
CHE1270a
10GHz
10-44GHz
DSCHE1270a0158
27K resistor datasheet
CHE1270a98F
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PI-820
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800–2000 MHz FEATURES • PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-820
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800–2000 MHz FEATURES • PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
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PI-810
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-810
PI-810
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CHE1270a98F
Abstract: No abstract text available
Text: CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). RF IN Matching
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CHE1270a
12-40GHz
CHE1270a
17GHz
22GHz
32GHz
12-40GHz
DSCHE1270a9222
CHE1270a98F
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PI-810
Abstract: 501V PI-820
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-810
PI-820
PI-810
501V
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop
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GP30DLH
GP30MLH
140Amp
DO-201AD
DO-201AD
MIL-STD-750,
300uS
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PI-820
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800–2000 MHz FEATURES • PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-820
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Untitled
Abstract: No abstract text available
Text: CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). RF IN Matching
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CHE1270a
12-40GHz
CHE1270a
12-40GHz
DSCHE1270a8205
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20B3 diode
Abstract: thermistor 1812
Text: LB5374 Laser Diode Module Description The LB5374 is a single longitudinal mode laser diode module. Features 1.3 |im DFB laser diode • High speed modulation up to 2.5Gb/s • Built-in 30dB optical isolator • Internal monitor photodiode, thermistor and thermo-electric cooler
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LB5374
LB5374
14-pin
1180nH
20B3 diode
thermistor 1812
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Untitled
Abstract: No abstract text available
Text: LB5374 Laser Diode Module Description The LB5374 is a single longitudinal mode laser diode module. Features • 1.3 im DFB laser diode • High speed modulation (up to 2.5Gb/s • Built-in 30dB optical isolator • Internal monitor photodiode, thermistor and thermo-electric cooler
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OCR Scan
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LB5374
LB5374
14-pin
180nH
00145m
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BA423AL
Abstract: MBG238 td Diode
Text: Philips Semiconductors Product specification AM band-switching diode BA423AL FEATURES DESCRIPTION • Continuous reverse voltage: max. 20 V Leadless diode in a hermetically-sealed glass 30D80C SMD package with lead/tin plated metal discs at each end. • Continuous forward current:
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BA423AL
01D1CH5
BA423AL
MBG238
td Diode
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LB7374
Abstract: No abstract text available
Text: LB7374 Laser Diode Module Description The LB7374 is a single longitudinal mode laser diode module. Features • 1.55 pm multi-quantum well MQW DFB laser diode with marrow spectral line width • High speed modulation (up to 2.5Gb/s) • Long distance transmission with no external modu
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LB7374
LB7374
14-pin
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tunnel diode
Abstract: No abstract text available
Text: LIMITER TUNNEL DIODE DETECTORS ML 7718-0000 SERIES DESCRIPTION T his series o f lim iter-detectors offers sim ilar performance advantages to the standard tunnel diode detectors but with extended RF input power range. A silicon PIN diode is integrated at the input o f the device to provide passive
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30dBm
17dBm
-20dBm
tunnel diode
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MCE 2000
Abstract: No abstract text available
Text: SURFACE MOUNT PIN DIODE ATTENUATOR MODEL PI-810 150-2000 MHz FEATURES: • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ir Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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OCR Scan
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PDF
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PI-820
PI-810
24dBm
MCE 2000
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ceramic attenuator MHz
Abstract: No abstract text available
Text: SURFACE MOUNT-CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150-2000 MHz FEATURES ‘ PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode tt Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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OCR Scan
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PDF
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PI-820
PI-810
L50dB
ceramic attenuator MHz
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Untitled
Abstract: No abstract text available
Text: LB7374 Laser Diode Module Description T he L B 7374 is a single longitudinal m ode laser diode m odule. Features • 1.55 pm m ulti-quantum well M Q W DFB laser diode w ith m arrow spectral line w idth • H igh speed m odulation (up to 2.5G b/s) • Long distance transm ission w ith no external m odulator (up to 80 km )
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LB7374
14-pin
--40K,
180fiH
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5dp diode
Abstract: No abstract text available
Text: SURFACE MOUNT-CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800-2000 MHz FEATURES ‘ PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode tt Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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OCR Scan
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PDF
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PI-820
40dfi
5dp diode
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