AO6706L
Abstract: AO6706
Text: AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
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AO6706
AO6706
AO6706L
0E-03
0E-04
0E-05
0E-06
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AO6706
Abstract: AO6706L D33A Sony D33A
Text: AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
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AO6706
AO6706
AO6706L
D33A
Sony D33A
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P-Channel MOSFET code 1A
Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
P-Channel MOSFET code 1A
P-channel Trench MOSFET
Bi-Directional P-Channel mosfet
SPC6801
SPC6801ST6RG
6P marking
P-channel MOSFET VGS -25V
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Untitled
Abstract: No abstract text available
Text: STT4443 -2.3A , -30V , RDS ON 120 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 STT4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
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STT4443
STT4443
02-Dec-2011
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Untitled
Abstract: No abstract text available
Text: STT6802 3.3A , 30V , RDS ON 65 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TSOP-6 DESCRIPTION STT6802 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
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STT6802
STT6802
15-Aug-2011
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Schottky Diode 20V 5A
Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
Schottky Diode 20V 5A
Bi-Directional P-Channel mosfet
IR P-Channel mosfet
SPC6801
SPC6801ST6RG
P-Channel MOSFET code 1A
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Untitled
Abstract: No abstract text available
Text: STT6602 N-Ch: 3.3A, 30V, RDS ON 65 mΩ Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TSOP-6 DESCRIPTION The STT6602 uses advanced trench technology to
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STT6602
STT6602
15-Aug-2011
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Untitled
Abstract: No abstract text available
Text: AO6403 30V P-Channel MOSFET General Description Product Summary VDS The AO6403 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Top View TSOP6
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AO6403
AO6403
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CEH2316
Abstract: No abstract text available
Text: CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS ON = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package.
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CEH2316
CEH2316
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CEH3456
Abstract: TF24
Text: CEH3456 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.5A, RDS ON = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package.
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CEH3456
CEH3456
TF24
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D 92 M 03 DIODE
Abstract: No abstract text available
Text: STT3458N 3.4 A, 60 V, RDS ON 92 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal
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STT3458N
30-Dec-2010
D 92 M 03 DIODE
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Untitled
Abstract: No abstract text available
Text: STT3463P -3 A, -60 V, RDS ON 155 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal
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STT3463P
08-Apr-2011
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STT3930N
Abstract: MosFET
Text: STT3930N 3.5A , 30V , RDS ON 58mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to
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STT3930N
300us
25-Nov-2013
STT3930N
MosFET
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STT3471P
Abstract: MosFET
Text: STT3471P -2A, -100V, RDS ON 350 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on)
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STT3471P
-100V,
08-Apr-2011
STT3471P
MosFET
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STT3463P
Abstract: MosFET
Text: STT3463P -2.7 A, -60 V, RDS ON 180 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal
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STT3463P
01-Oct-2013
STT3463P
MosFET
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Untitled
Abstract: No abstract text available
Text: BSL307SP Preliminary data OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode R DS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A P-TSOP-6-1 • Avalanche rated • dv/dt rated 4
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BSL307SP
Q67042-S4067
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BSL307SP
Abstract: L6327
Text: BSL307SP Rev 1.2 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5
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BSL307SP
L6327:
3000pcs/r.
BSL307SP
L6327
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bsl307sp
Abstract: No abstract text available
Text: BSL307SP Rev 1.3 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5
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BSL307SP
L6327:
3000pcs/r.
bsl307sp
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BSL307SP
Abstract: SMD marking code 55A
Text: BSL307SP Preliminary data OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A P-TSOP-6-1 • Avalanche rated • dv/dt rated 4
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BSL307SP
Q67042-S4067
BSL307SP
SMD marking code 55A
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Untitled
Abstract: No abstract text available
Text: BSL307SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature P-Channel Enhancement mode Logic Level 150°C operating temperature Avalanche rated dv/dt rated VDS -30 RDS on 43 ID V m -5.5 A P-TSOP-6-1 4 3 2 1 5 6 Type
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BSL307SP
Q67042-S4067
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bsl307sp
Abstract: No abstract text available
Text: BSL307SP Rev 1.4 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5
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BSL307SP
L6327:
3000pcs/r.
bsl307sp
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Q67042-S4067
Abstract: MARKING sPC bsl307sp SMD marking code 55A
Text: BSL307SP Rev 1.0 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A P-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 6
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BSL307SP
Q67042-S4067
Q67042-S4067
MARKING sPC
bsl307sp
SMD marking code 55A
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Untitled
Abstract: No abstract text available
Text: Rev 2.0 BSL307SP OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5
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BSL307SP
IEC61249Â
H6327:
3000pcs/r.
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BSL315P
Abstract: JESD22-A114 L6327
Text: BSL315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode -30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID • Logic level (4.5V rated) -1.5 • Avalanche rated A PG-TSOP-6 • Qualified according to AEC Q101
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BSL315P
L6327:
BSL315P
JESD22-A114
L6327
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