Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 366 NM Search Results

    DIODE 366 NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 366 NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2 Wavelength Laser Diode

    Abstract: diode 366 nm Toshiba TOLD9225M TOLD9225M 670NM Laser-Diode 7227 RITTAL laser diode toshiba 10mw 670nm
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-383-8406 TOSHIBA LASER DIODE TOLD9225M InGaAIP LD ? Lasing Wavelength: ? Optical Output Power: ? Operation Case Temperature: ? = 670nm typ. Po = 10mW (CW) Tc = -10~60?C Pin Connection


    Original
    PDF OLD9225M 670nm 2331-S01 2 Wavelength Laser Diode diode 366 nm Toshiba TOLD9225M TOLD9225M 670NM Laser-Diode 7227 RITTAL laser diode toshiba 10mw 670nm

    670NM Laser-Diode

    Abstract: diode 366 nm ld 670nm
    Text: 435 Route 206 • P. O. Box 366 Newton, NJ 07860-0366 SALES 973 579-7227 FAX (973)300-3600 DL3149-055A RED LASER DIODE DL3149-055A is a 670nm (Typ.) Index guided AlGaInP laser diode with low threshold current. The low threshold current and short wavelength are achieved by the use of a strained multiple quantum well


    Original
    PDF DL3149-055A 670nm 6345-S01 670NM Laser-Diode diode 366 nm ld 670nm

    photodiode

    Abstract: 1310nm photodiode photodiode with voltage output 2 Wavelength Laser Diode mitsubishi thyristors diode 366 nm ML725B8F AlGaAs laser diode photodiode dark current THORLABS PHOTODIODE
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 SALES 973-579-7227 FAX 973-300-3600 ML725B8F MITSUBISHI LASER DIODES DESCRIPTION ML725B8F is a AlGaAs laser diode which provides a stable, single transverse mode oscillation with emission wavelength of 1310nm and standard


    Original
    PDF ML725B8F ML725B8F 1310nm 0280-S01 photodiode 1310nm photodiode photodiode with voltage output 2 Wavelength Laser Diode mitsubishi thyristors diode 366 nm AlGaAs laser diode photodiode dark current THORLABS PHOTODIODE

    6347S

    Abstract: 670NM Laser-Diode DL3149-057 DL-3149-057
    Text: 435 Route 206 • P. O. Box 366 Newton, NJ 07860-0366 SALES 973 579-7227 FAX (973)300-3600 DL3149-057 Red Laser Diode FEATURES • Short wavelength: 670nm (Typ.) • Low threshold current: Ith = 25mA (Typ.) • High operating temperature: 5 mW at 60ºC • Small package: Ø5.6mm


    Original
    PDF DL3149-057 670nm 6347-S01, 6347S 670NM Laser-Diode DL-3149-057

    pin diagram i3 processor

    Abstract: basics of intel i3 processor capacitor 2200 micro M pin configuration of i3 processor 400 mhz filter intel core i3 processor intel i3 intel pentium IV microprocessor pin diagram jtag mhz pentium II
    Text: MOBILE PENTIUM II PROCESSOR IN Micro-PGA AND BGA PACKAGES AT 400 MHz, 366 MHz, 333 MHz, 300PE MHz, AND 266PE MHz      Available at 400 MHz, 366 MHz, 333 MHz, 300PE MHz, and 266PE MHz  Fully compatible with previous Intel microprocessors — Binary compatible with all applications


    Original
    PDF 300PE 266PE 16-Kbyte 256-Kbyte) pin diagram i3 processor basics of intel i3 processor capacitor 2200 micro M pin configuration of i3 processor 400 mhz filter intel core i3 processor intel i3 intel pentium IV microprocessor pin diagram jtag mhz pentium II

    443BX

    Abstract: 245103 pbga-b615
    Text: MOBILE PENTIUM II PROCESSOR IN BGA PACKAGE AT 366 MHZ, 333 MHZ, 300PE MHZ, AND 266PE MHZ + + + Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz + — Binary compatible with all applications Supports the Intel Architecture with Dynamic Execution Integrated primary 16-Kbyte instruction


    Original
    PDF 300PE 266PE 16-Kbyte 256-Kbyte) 443BX 245103 pbga-b615

    PPGA-B615

    Abstract: CKDM66-M Intel Mobile Celeron Processor BGA
    Text: MOBILE INTEL CELERON® PROCESSOR IN MICRO-PGA AND BGA PACKAGES AT 466 MHZ, 433 MHZ, 400 MHZ, 366 MHZ, 300 MHZ, AND 266 MHZ DATASHEET + Available at 266 MHz, 266 MHz at low voltage, 300 MHz, 333 MHz, 366 MHz, 400 MHz, 433 MHz, and 466 MHz + Supports Intel Architecture with


    Original
    PDF 16-Kbyte 128Kbyte) PPGA-B615 CKDM66-M Intel Mobile Celeron Processor BGA

    Intel Mobile Celeron Processor BGA

    Abstract: ink cartridge chip block diagram of pentium D capacitor AA8 pentium II Sensor Cement Capacitor Swatch Group 443BX V0027-00
    Text: MOBILE PENTIUM II PROCESSOR IN BGA PACKAGE AT 366 MHz, 333 MHz, 300PE MHz, AND 266PE MHz + + + + Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz — Binary compatible with all applications Supports the Intel Architecture with Dynamic Execution Integrated primary 16-Kbyte instruction


    Original
    PDF 300PE 266PE 16-Kbyte 256-Kbyte) Intel Mobile Celeron Processor BGA ink cartridge chip block diagram of pentium D capacitor AA8 pentium II Sensor Cement Capacitor Swatch Group 443BX V0027-00

    400 mhz filter

    Abstract: diode t40 041H 440M 440MX 443BX pbga-b615 L-11117 245112 Mini-Cartridge
    Text: MOBILE CELERON PROCESSOR IN MICRO-PGA AND BGA PACKAGES AT 466 MHZ, 433 MHZ, 400 MHZ, 366 MHZ, 300 MHZ, AND 266 MHZ DATASHEET      Available at 266 MHz, 266 MHz at low voltage, 300 MHz, 333 MHz, 366 MHz, 400 MHz, 433 MHz, and 466 MHz Supports Intel Architecture with Dynamic


    Original
    PDF 16-Kbyte 128-Kbyte) 400 mhz filter diode t40 041H 440M 440MX 443BX pbga-b615 L-11117 245112 Mini-Cartridge

    V23826-H18-C

    Abstract: V23826-H18-C316 V23826-H18-C356 V23826-H18-C366 V23826-H18-C376 SM TX 433 stm4 infineon 433 mhz ask transmitter module
    Text: V23826-H18-C * (3.3V) Single Mode 622 MBd ATM/SDH/SONET 1x9 Transceiver Extended Temperature Range (–40°C to 85°C) 11x 4.875 .192 2 product label M .8 20.32 Z 1 3 (15.88–0.5) .625–.02 .8 (1.9–0.1) 2x .075–.004 (2.54) .1 .5 .8 (2.54) .1 20.32 (2.05–0.05)


    Original
    PDF V23826-H18-C( D-13623, V23826-H18-C V23826-H18-C316 V23826-H18-C356 V23826-H18-C366 V23826-H18-C376 SM TX 433 stm4 infineon 433 mhz ask transmitter module

    NX8563LA

    Abstract: NX8563LAS DFB CATV
    Text: DATA SHEET NEC's DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS NX8563LA Series FEATURES DESCRIPTION • PEAK OUTPUT POWER NEC's NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser


    Original
    PDF NX8563LA NX8563LA 14-PIN NX8563LAS DFB CATV

    mobile MOTHERBOARD CIRCUIT diagram

    Abstract: 8080 intel microprocessor pin diagram pcb diagram of mini ups system DIODE D29 -08 humidity sensor philips H1 Intel Pentium 4 Processor instruction set INTEL PENTIUM PROCESSOR MOBILE MODULE 243190 mobile circuit diagram Intel Mobile Celeron Processor BGA
    Text: MOBILE PENTIUM II PROCESSOR IN MINI-CARTRIDGE PACKAGE AT 366 MHZ, 333 MHZ, 300PE MHZ , AND 266PE MHZ + + + Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz + — Binary compatible with all applications Supports the Intel Architecture with Dynamic


    Original
    PDF 300PE 266PE 16-Kbyte 256-Kbyte) mobile MOTHERBOARD CIRCUIT diagram 8080 intel microprocessor pin diagram pcb diagram of mini ups system DIODE D29 -08 humidity sensor philips H1 Intel Pentium 4 Processor instruction set INTEL PENTIUM PROCESSOR MOBILE MODULE 243190 mobile circuit diagram Intel Mobile Celeron Processor BGA

    mobile MOTHERBOARD CIRCUIT diagram

    Abstract: 443BX jtag mhz pcb diagram of mini ups system pentium II PENTIUM PROCESSOR MOBILE MODULE
    Text: MOBILE PENTIUM II PROCESSOR IN MINI-CARTRIDGE PACKAGE AT 400 MHZ, 366 MHZ, 333 MHZ, 300PE MHZ, AND 266PE MHZ DATASHEET      Available at 400 MHz, 366 MHz, 333 MHz, 300PE MHz, and 266PE MHz  Fully compatible with previous Intel microprocessors — Binary compatible with all applications


    Original
    PDF 300PE 266PE 16-Kbyte mobile MOTHERBOARD CIRCUIT diagram 443BX jtag mhz pcb diagram of mini ups system pentium II PENTIUM PROCESSOR MOBILE MODULE

    NX8563 Series

    Abstract: thermistor 517 NX8563 NX8563LB NX8563LF 160832
    Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode


    Original
    PDF NX8563 NX8563 14-PIN NX8563 Series thermistor 517 NX8563LB NX8563LF 160832

    FGA10

    Abstract: THORLABS FGA10 InGaAs photodiode spectral response InGaAs photodiode photodiode bias circuit C1012 1800nm Thorlabs PHOTODIODE FGA10 photodiode InGaAs NEP
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode High Speed The FGA10 is a high-speed InGaAs photodiode with a spectral response from 700nm to 1800nm. This photodiode has a PIN structure that provides fast rise and fall times with a bias of 5V.


    Original
    PDF FGA10 700nm 1800nm. 900nm: 700-1800nm 100nA 35/fBW 2234-S01 THORLABS FGA10 InGaAs photodiode spectral response InGaAs photodiode photodiode bias circuit C1012 1800nm Thorlabs PHOTODIODE FGA10 photodiode InGaAs NEP

    FDS1010

    Abstract: FDS010 PDA155 Thorlabs FDS100 circuit FDS100 FDS100 RlOAD THORLABS PHOTODIODE PDA255 PDA400
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDS1010 Si Photodiode -Large Active Area -Low Capacitance Electrical Characteristics Spectral Response: Active Area: Rise/Fall Time RL=50Ω : Bandwidth (RL=50Ω, -3dB,5V):


    Original
    PDF FDS1010 900nm: 400-1100nm 600nA 375pF 35/fBW FDS010, FDS100, PDA55, FDS010 PDA155 Thorlabs FDS100 circuit FDS100 FDS100 RlOAD THORLABS PHOTODIODE PDA255 PDA400

    D400F

    Abstract: D400FC photodiode ge FGA10 FGA03PT THORLABS FGA10 PDA255 PDA400 Ge detector Thorlabs
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode -Large Active Area -Low Capacitance 0.010 Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω : Cut Off Frequency (50Ω, 3V):


    Original
    PDF FDG05 980nm: 800-1800nm 220ns 3000pF 30AWG FGA10, FGA03PT, FGA03PT/FC, D400FC, D400F D400FC photodiode ge FGA10 FGA03PT THORLABS FGA10 PDA255 PDA400 Ge detector Thorlabs

    18KHZ

    Abstract: SIM75D12SV1 vvvf motor
    Text: SIM75D12SV1 Preliminary “HALF-BRIDGE” IGBT MODULE VCES = 1200V Ic = 75A VCE ON typ. = 2.6V Features Applications ▪ Smarted NPT Technology Design ▪ AC & DC Motor controls ▪ 10µs Short circuit capability ▪ VVVF inverters ▪ Low turn-off losses


    Original
    PDF SIM75D12SV1 18KHZ 18KHZ SIM75D12SV1 vvvf motor

    D400F

    Abstract: D400FC FGA04 FGA10 photodiode responsivity 1550nm with FC connector photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth Photodiode, 1550nm NEP THORLABS FGA10 1550nm photodiode 2GHz
    Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 PH. 973-579-7227 FAX 973-300-3600 FGA04 InGaAs Photodiode High Responsivity Low Capacitance: High Speed Fiber Compatible with FC Connector Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω :


    Original
    PDF FGA04 1550nm: 800-1700nm 35/fBW 3154-S01 D400FC, FGA10, FGA04 D400F D400FC FGA10 photodiode responsivity 1550nm with FC connector photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth Photodiode, 1550nm NEP THORLABS FGA10 1550nm photodiode 2GHz

    PPT Diode specifications

    Abstract: 74AHCT Zytrex 74als power consumption
    Text: hflrex ZXS4AH CT ZX 74AH C T 365/367 sæ366/368 Hex Bus-Drivers with 3-State Outputs February 1985 OBJECTIVE SPECIFICATIONS Features D escription • Function, pin-out, speed and drive com patibility w ith 54/74A L S logic fam ily These high-speed Hex bus drivers are designed specifi­


    OCR Scan
    PDF ZX74AHCT 54/74ALS 74AHCT: 54AHCT: PPT Diode specifications 74AHCT Zytrex 74als power consumption

    Untitled

    Abstract: No abstract text available
    Text: oatzloa7 oaa,oaQ KS54AHCT KS74AHCT 365/367 KS54AHCT KS74AHCT 366/368 Hex Bus-Drivers with 3-State Outputs 16 Dip Unit: mm These high-speed Hex bus drivers are designed specifically to improve both the performance and density of 3-state memory address drivers,


    OCR Scan
    PDF KS54AHCT KS54AHCT KS74AHCT 90-xo 14-Pin 16-Pin 20-Pin 24-Pin

    l 7251 3.1

    Abstract: ft03e
    Text: int ! MOBILE PENTIUM Il PROCESSOR IN BGA PACKAGE AT 366 MHZ, 333 MHZ, 300PE MHZ, AND 266PE MHZ Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz Fully compatible with previous Intel microprocessors Supports the Intel Architecture with Dynamic Execution


    OCR Scan
    PDF 300PE 266PE 16-Kbyte 256-Kbyte) l 7251 3.1 ft03e

    54HCT365

    Abstract: D547
    Text: Technical Data CD54/74HC365, CD54/74HCT365 CD54/74HC366, CD54/74HCT366 File N um b er 1 5 3 9 High-Speed CMOS Logic FUNCTIONAL DIAGRAM AND TERMINAL ASSIGNMENT Hex Buffer/Line Driver, 3-State Non-Inverting and Inverting Type Features: • B uffe red Inputs


    OCR Scan
    PDF CD54/74HC365, CD54/74HCT365 CD54/74HC366, CD54/74HCT366 HCT365 54/74H T365/366 54HCT365 D547

    L6597-401

    Abstract: L6594-402 L6598 L6595-402 L6593-402 L6593
    Text: MiCM PIN DIODE SW ITCH ML 6590-400 Series MICROW AVE CO M M O N MODULE SP4T REFLECTIVE SW ITCH DESCRIPTION The M /A-COM Ltd range of M iCM SP4T switches are m iniaturised carrier mounted com ponents providing high isolation, low loss and fast switching speed in the frequency range 0.5 to 18 GHz. Devices provide for direct


    OCR Scan
    PDF