PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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2sc4762
Abstract: DIODE 39c diode 1a 1500v
Text: SavantIC Semiconductor Product Specification 2SC4762 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display
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2SC4762
2sc4762
DIODE 39c
diode 1a 1500v
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 600W > TPSMB series TPSMB Series Uni-directional TVS Diode Arrays SPA Description Family of Products The TPSMB series is designed specifically to protect sensitive electronic equipment from voltage transients
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AEC-Q101
JESD201A
EC-61000-4-2
DO-214AA
12mm/13â
RS-481
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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4C3 zener
Abstract: GLZ4.3B zener 4c3
Text: GLZ SERIES 500mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference
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500mW
MIL-STD-202,
4C3 zener
GLZ4.3B
zener 4c3
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39A zener diode
Abstract: diode zener 33c diode zener 22c GLZ56 minimelf 15A
Text: GLZ2.0 ~ GLZ56 500mW SUFACE MOUNT ZENER DIODE FEATURES • Planar Die construction MINI-MELF / LL-34 • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb
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GLZ56
500mW
LL-34
MIL-STD-750,
39A zener diode
diode zener 33c
diode zener 22c
GLZ56
minimelf 15A
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5Z27 DIODE
Abstract: zener diode diode zener 18v 1w bidirectional zener ZENER 5z27 1W 10V ZENER DIODE RD zener diode zener 6v diode zener- diode toshiba zener
Text: 9097250 TOSHIBA DIS C R E T E / O P T O 39C 0 2 3 8 5 D 7 e //" 2 3 ZENER DIODE, BI-DIRECTIONAL ZENER DIODE TOSHIBA -CDISCRETE/OPTO* BT DE | I C H 7SS0 000S3ÖS T |~~ • ZENER DIODE 5Z27 • CHARACTERISTICS TYPËT- I'lEM P m ax IRSM m ax 5W 5Z27
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OCR Scan
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D0D53Ã
40Aloms
50//A
1ZM30,
1ZM50"
1ZM30
4-36V
1ZM50
DO-15
5Z27 DIODE
zener diode
diode zener 18v 1w
bidirectional zener
ZENER 5z27
1W 10V ZENER DIODE
RD zener diode
zener 6v diode
zener- diode
toshiba zener
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30GWJ2C11
Abstract: 12-25B1A 30GWJ2C12 30FWJ2C11 30FWJ2C12 1225B1 12-39A1A TOSHIBA RECTIFIER TF150t
Text: 9097250 TOSHIBA DISCRETE/OPTO 0 '7~-St2rÒ5' 39C 023^5 RECTIFIER STACK (SCNQTTKY BARRIER DIODE STACK) ~3T DE I TOTTSSD 0005345 fl | . 30GWJ2C11 Unit 40V 30A MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak Reverse 30FWJ2C11 Voltage 30GWJ2C11 Average Output Rectified Current (Fig. 1)
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OCR Scan
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30GWJ2C11
30FWJ2C11
30GWJ2C11
100KHz
25B1A
12-25B1A
30GWJ2C12
30FWJ2C12
1225B1
12-39A1A
TOSHIBA RECTIFIER
TF150t
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1S265 Zener Diode
Abstract: 1S262-1S303 1S265 zener 150v 1w DIODE 39c 1s298 1S303 1S272 2.LZ9.1 1S256
Text: 1 9097250 TOSHIBA S ZENER DIODE D IS C R E T E / O P T O ! 39C 02384 D TW / TOSHIBA -CDISCRETE/OPTOJ 1Z6.2— 1Z30 6,2V ~ 30V Voltage Tolerance Value : ±10% I 1S262— 1S303 I MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CH ARACTER ISTICS ‘ (Ta MAXIMUM RATINGS (T a
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OCR Scan
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1S220â
1S261
1S262â
1S303
V-30V
V-150V
1S242
1S284
1S243
1S285
1S265 Zener Diode
1S262-1S303
1S265
zener 150v 1w
DIODE 39c
1s298
1S272
2.LZ9.1
1S256
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3-13A1A
Abstract: 30DG15 30BG15 30CG15
Text: 39C 02259 9 0 9 7 2 50 TOSHIBA DISCRETE/OPTO 3 e] DE J ^ Cn72SD Ü pöi'/r HIGH-EFFICIENCY DIODE G O D S S Ì 11] 4 Unit in min 30PG15 200V 30A MAXIMUM RATINGS C H A R A C TER ISTIC 30BG15 Repetitive Peak 30CG15 Reverse Voltage 30DG15 Average Forw ard Current
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OCR Scan
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DOOSSi11]
30DG15
30BG15
30CG15
20Max.
SC-11
3-13A1A
3-13A1A
30DG15
30BG15
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15DG15
Abstract: DIODE 39c 15BG15 15CG15
Text: 9097250 TOSHIBA DI S C R E T E /O P T O O T~'02>-Jr7 39C 02258 HIGH-EFFICIENCY DIODE 1Ä dF | cí ü cí 7HS0 0D 02SSñ H Unit in an 15DG15 200V 15A M A X IM U M RATINGS CH AR ACTER ISTIC 15BG15 Repetitive Peak 15CG15 Reverse Voltage 15DG15 Average Forward Current
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OCR Scan
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15DG15
15BG15
15CG15
3-11E1A
AC23A
15DG15
DIODE 39c
15BG15
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IS1832
Abstract: diode 1800v 0.5a TFR1L
Text: 9 0 9 7 2 50 TOSHIBA 3T DE I TDTTSSD 000223e] T TFR1T 39C 0 2239 DISCRETE/OPTO 0 T 1 0 3 “// FAST RECOVERY DIODE _ Unit in wn 1500V 0.5A MAXIMUM RATINGS C H A R A C T E R IS T IC TFR 1L TFR1N Repetitive Peak R everse Voltage TFR1Q TFR1T Average F orw ard C urrent
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OCR Scan
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000223e
IS1832
diode 1800v 0.5a
TFR1L
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1BH62
Abstract: DIODE 1BH62 IS1835 1JH62 1DH62 1GH62 1JH62 3-3b1a DIODE 39c 1S1834 1S1835
Text: 9097250 TOSHIBA DISCRETE/OPTO 39C FAST RECOVERY DIODE 02240 »^^0^7250 0002540 S Unit in I S 1835 600V Bin 1A MAXIMUM RATING C H A R A C T E R IST IC SY M BO L 400 1S1834 R epetitiv e P eak R e v e rse V oltage 1S1835 V Vrrm 600 1S1834 R e v e r s e V oltage
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OCR Scan
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D00aa4D
1S1835
1S1834
100ns
1BH62
DIODE 1BH62
IS1835
1JH62
1DH62
1GH62
1JH62 3-3b1a
DIODE 39c
1S1835
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200JH21
Abstract: toshiba 3-60B1A
Text: -_ 9097250 TOSHIBA 39C 02245 C D IS C R E T E / O P T O 0 7"- 0 3 - 2 3 FAST RECOVERY DIODE 0 SHIBA { D I S C R E T E / O P T 0> 200JH21 ln DËJ'iD^aSG 0002545 4 Unit in 600V 200A MAXIMUM RATINGS CHARACTERISTIC SY M B O L RATING UN IT Repetitive P eak R everse Voltage
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OCR Scan
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200JH21
30QJH21
Repeti25
toshiba 3-60B1A
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15FWJ11
Abstract: 15GWJ11 30GWJ11 30FWJ11 AC23A
Text: 9097250 TOSHIBA 39C CDI S C R E T E / O P T O 02257 7^ 03-^ 7 SCHOTTKY BARRIER DIODE Unit in nm 15GWJ11 40V 15A MAXIMUM RATINGS C H A R A C T E R IS T IC SY M B O L Repetitive Peak 15FWJ11 R everse Voltage 15GWJ11 RATING UNIT 30 V rrm 40 Average F o rw a rd C u rrent
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OCR Scan
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15GWJ11
15FWJ11
100Hz
3-11G1A
15GWJ11
30GWJ11
30FWJ11
AC23A
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3GH61
Abstract: No abstract text available
Text: 9097250 TOSHIBA <D I S C R E T E / O P T O _ FAST RECOVERY DIODE 1500V O T* 6 ^ DE I T G T T S S D DDD E SM S T TOSHIBA -CDISCRETE/OPTOJ 1S2711 39C 0 2242 Unit in Bn 1.5 A MAXIMUM RATINGS C H A R A C T E R IS T IC SYM BO L U N IT R A T IN G V rrm 1500
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OCR Scan
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1S2711
3GH61
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toshiba 6jg11
Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
Text: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage
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OCR Scan
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6JG11
6BG11
6DG11
6FG11
6GG11
13Max.
3-11B1A
12BG11-12JG11
12BH11
toshiba 6jg11
12GH11
12JG11
12JH11
6JG11
12GG11
IF-10A
6DG11
6GG11
12BG11
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DIODE 39c
Abstract: 1S2777 TVRIG 1S2775 1S2776 251C diode 1BA TVR1D 125X3
Text: 9097250 TOSHIBA FAST RECOVERY DIODE TVR1J 600V 39C 02238 <D IS C R E T E / O P T O In dF I t DT V S S O 0 0 0 2 2 3 Û 7 U n it in 0 .5 A M AXIMUM RATINGS C H A R A C T E R IS T IC TVR1B TVR1D R epetitive Peak R everse Voltage TVR1G TVR1J Average F orw ard C urrent
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OCR Scan
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DO-15
125X3
100ns
DIODE 39c
1S2777
TVRIG
1S2775
1S2776
251C
diode 1BA
TVR1D
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PDF
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ir20d
Abstract: 3DH61 3JH61 1S2711 3GH61 3BH61
Text: 9097250 TOSHIBA <D IS C R E T E / O P T O _ FAST RECOVERY DIODE 39C 0 2 2 4 2 DE I T G T T H S D TOSHIBA -CDISCRETE/0PT0} 1500V 1.5A 1S2711 O T ~ 6 3_-' * DDDE54S T Unit in am M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L U N IT R A T IN G
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OCR Scan
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1S2711
20diA,
ir20d
3DH61
3JH61
1S2711
3GH61
3BH61
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PDF
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30JG11
Abstract: 30GG11 30BG11 30DG11 30FG11
Text: 9 0 9 7 2 50 T O S H I B A CDI S C R E T E i O P T O > 39C FAST RECOVERY DIODE 02244 D d W ? DE I^D-iVESG 0 DD2244 2 | Unit in ui 600V 30A 3 Q JS Î1 ,Max -f* 20- M A X IM U M RATINGS C H A R A C T E R IS T IC SY M B O L RATING 30BG11 30DG11 R epetiiïïe Peak
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OCR Scan
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0DDZ244
30BG11
30DG11
30FG11
30GG11
30JG11
3-45A1A
30JG11
30GG11
30BG11
30DG11
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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OCR Scan
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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PDF
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FU-29
Abstract: LA1175 L4 95 Mitsumi FM OSC LA1174 3SK181 Mitsumi AM coil ift Mitsumi D0994 IC LA1175
Text: Ordering number:EN 227 6B Monolithic Linear 1C L A 1 1 7 5, 1 1 7 5 FM F r o n t End for Ca r Ra d i o , Home St e r e o A p p l i c a t i o n s Functions . Double-balanced type MIX, PIN diode drive AGC output, MOS FET gate drive AGC output, keyed AGC, differential IF amplifier, buffer amplifier for
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OCR Scan
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PDF
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