chip Marking 3A3
Abstract: Diode BGX50A BGX50A VPS05178
Text: BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BGX50A
VPS05178
EHA00007
OT143
EHB00147
EHB00148
Jul-31-2001
EHB00149
chip Marking 3A3
Diode BGX50A
BGX50A
VPS05178
|
PDF
|
marking SA
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
|
Original
|
ENN7029
SBS806M
SBS806M
SBS006.
SBS806M]
marking SA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
|
Original
|
ENN7029
SBS806M
SBS806M]
SBS806M
SBS006.
|
PDF
|
VPS05178
Abstract: EHA07008
Text: BAR 65-07 Silicon RF Switching Diode 3 Low loss, low capacitance PIN-diode Band switch for TV-tuners 4 Series diode for mobile communication transmit-receiver switch 2 Unconnected pair 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAR 65-07 M Pin Configuration
|
Original
|
VPS05178
EHA07008
OT-143
Oct-05-1999
100MHz
VPS05178
EHA07008
|
PDF
|
A1 SOT143
Abstract: VPS05178 BAW101 EHA07008
Text: BAW101 Silicon Switching Diode Array 3 Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BAW101
VPS05178
EHA07008
OT143
EHN00019
Aug-20-2001
EHB00104
EHB00103
A1 SOT143
VPS05178
BAW101
EHA07008
|
PDF
|
SOT JPs
Abstract: VPS05178 EHA07008
Text: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
VPS05178
EHA07008
OT-143
EHN00019
100ns,
Oct-08-1999
EHB00102
EHB00104
EHB00103
SOT JPs
VPS05178
EHA07008
|
PDF
|
VPS05178
Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
Text: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
|
Original
|
14-099R
VPS05178
EHA07012
OT-143
EHD07089
EHD07090
Oct-07-1999
VPS05178
marking a4 SOT-143
a3 sot143
marking s8s
4C3 diode
|
PDF
|
A4 marking diode
Abstract: VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R
Text: BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 • Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
|
Original
|
15-099R
VPS05178
EHA07012
OT-143
EHD07077
EHD07078
Oct-07-1999
A4 marking diode
VPS05178
sot-143 s6s
diode marking a4
4C3 diode
15-099R
|
PDF
|
diode marking 343
Abstract: sot-343 schottky diode
Text: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, Dual, Galvanically isolated Silicon Schottky diode , is designed for use in high speed surface mount switching applications. Marking Code is WSH4.
|
Original
|
OT-343
100mA
27-August
diode marking 343
sot-343
schottky diode
|
PDF
|
1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
|
Original
|
HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
|
PDF
|
marking u1s SOT-143
Abstract: VPS05178 chip Marking 3A3
Text: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol
|
Original
|
VPS05178
EHA00007
OT-143
EHB00147
EHB00148
Oct-26-1999
EHB00149
marking u1s SOT-143
VPS05178
chip Marking 3A3
|
PDF
|
BAS40-07W
Abstract: No abstract text available
Text: BAS40-07W 3 Silicon Schottky Diode 4 General-purpose diode for high-speed switching Circuit protection Voltage clamping 2 High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -
|
Original
|
BAS40-07W
VPS05605
EHA07008
OT343
EHB00039
Aug-23-2001
EHB00038
BAS40-07W
|
PDF
|
BAR80
Abstract: VSO05553
Text: BAR80 Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 VSO05553 Type Marking BAR80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage
|
Original
|
BAR80
VSO05553
Aug-17-2001
100MHz
EHD07010
EHD07009
BAR80
VSO05553
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:
|
Original
|
DSS6-0025BS
6Y025AS
O-252
60747and
20131031b
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DSA15IM200UC preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 15 A VF = 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM200UC Marking on Product: SFMAUI Backside: cathode 1 3 4 Features / Advantages:
|
Original
|
DSA15IM200UC
O-252
60747and
20131031b
|
PDF
|
4C3 diode
Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
Text: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3 Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R
|
Original
|
BAT15-099R
VPS05178
EHA07012
OT143
EHD07077
15-099R
Jul-31-2001
4C3 diode
Schottky Diode Marking C3
A4 marking diode
VPS05178
BAT15-099R
diode marking a4
diode MARKING A3
|
PDF
|
sot143 marking code u1s
Abstract: BFP181 BGX50A E6327
Text: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
|
Original
|
BGX50A.
BGX50A
OT143
sot143 marking code u1s
BFP181
BGX50A
E6327
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
|
Original
|
BGX50A.
BGX50A
OT143
Feb-03-2003
|
PDF
|
BAT62
Abstract: VPS05178
Text: BAT62 Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2
|
Original
|
BAT62
VPS05178
EHA07020
OT143
Aug-23-2001
EHD07061
EHD07062
900MHz
BAT62
VPS05178
|
PDF
|
BAT63-07W
Abstract: No abstract text available
Text: BAT63-07W Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz 4 frequencies For high-speed switching applications Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!
|
Original
|
BAT63-07W
VPS05605
EHA07008
OT343
Jul-06-2001
BAT63-07W
|
PDF
|
SRV05-4
Abstract: 076a
Text: UNISONIC TECHNOLOGIES CO., LTD SRV05-4 Preliminary DIODE LOW CAPACITANCE TVS DIODE ARRAY DESCRIPTION The UTC SRV05-4 is a low capacitance TVS diode array, it uses UTC’s advanced technology to provide customers with low leakage current and low clamping voltage, etc.
|
Original
|
SRV05-4
SRV05-4
SRV05-4L-AG6-R
SRV05-4G-AG6-R
SRV05-4L-AG6-R
OT-26
QW-R601-076
076a
|
PDF
|
6Y150AS
Abstract: 6Y150AS IXYS
Text: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak
|
Original
|
DSS6-015AS
6Y150AS
O-252
60747and
20131031b
6Y150AS
6Y150AS IXYS
|
PDF
|
diode oar
Abstract: BAT54
Text: CD1L BAT54 SCHOTTKY BARRIER DIODE BAT54 single diode Marking PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m B A T 5 4 -4 L _3.0_ 2.8 1 = ANODE 2 = NC 3 = CATHODE 0 .1 4 0 .4 3 0 .3 8 Pin configuration 3 2.6 2 .4 _1.02 o.8<r 0.6 0 2.00 040" 1.80 ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
BAT54
BAT54
diode oar
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol
|
OCR Scan
|
Q62702-G38
OT-143
OU00007
fl235bD5
fi235bD5
0235bD5
Q122235
|
PDF
|
