25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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ME400802
Abstract: powerex ME40
Text: ME400802_ I'owerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ThtG6-PhaS6 Diode Bridge Modules 20 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are medium
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ME400802
Amperes/800
ME400802
powerex ME40
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5516 DIODE
Abstract: No abstract text available
Text: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm
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mcc 55-12
Abstract: mcc 40-12 MCC 65-16 ABB mcc mcc 65-12 MCC 55-08 mcc 55-16 MCC 40 -14io8 ABB mcc 40-12 MCC 40 -12io8
Text: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-Module D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm
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T-25-23
TVJ-450C
K21-0120
K21-0180
K21-0265
K41-0150
mcc 55-12
mcc 40-12
MCC 65-16
ABB mcc
mcc 65-12
MCC 55-08
mcc 55-16
MCC 40 -14io8
ABB mcc 40-12
MCC 40 -12io8
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W on 40 40 0.7mm ceramic board .
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2SD2167
30MHz
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Untitled
Abstract: No abstract text available
Text: Product specification BAP51-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low diode capacitance +0.1 2.6-0.1 Low diode forward resistance. 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter
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BAP51-03
OD-323
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Text: SMD Type Product specification DTDG23YP Features NPN Epitaxial Planar Silicon Transistor with built-in resistors and zener diode . High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load). Absolute Maximum Ratings Ta = 25
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DTDG23YP
40x40x0
500mA
30MHz
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Abstract: No abstract text available
Text: Product specification BAP51-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low diode capacitance Low diode forward resistance. 0.77max +0.05 0.1-0.02 0.07max +0.1 1.6-0.1 Absolute Maximum Ratings Ta = 25 Parameter
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BAP51-02
OD-523
77max
07max
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Text: Product specification BAT74 Unit: mm Features Low forward voltage Guard ring protected Small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Symbol continuous reverse voltage Test Condition Min IF 30 V 60 V single diode loaded 200 mA 1 double diode loaded
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BAT74
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Untitled
Abstract: No abstract text available
Text: Product specification BAP64-03 SOD-323 +0.1 1.7-0.1 +0.1 1.3-0.1 High voltage, current controlled +0.05 0.85-0.05 +0.05 0.3-0.05 Features Unit: mm RF resistor for RF attenuators and switches Low diode capacitance +0.1 2.6-0.1 1.0max Low diode forward resistance
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BAP64-03
OD-323
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Untitled
Abstract: No abstract text available
Text: Product specification BA682; BA683 LL-34 Unit: mm Features 1.50 1.30 2.64REF Continuous reverse voltage:max. 35 V 0.50 0.35 Continuous forward current:max. 100 mA Low diode capacitance:max. 1.5 pF Low diode forward resistance:max. 0.7 to 1.2 3.60 3.30 Absolute Maximum Ratings Ta = 25
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BA682;
BA683
LL-34
64REF
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Untitled
Abstract: No abstract text available
Text: Product specification BA591 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Very small plastic SMD package Low diode capacitance:max. 1.05 pF +0.1 2.6-0.1 1.0max Low diode forward resistance:max. 0.7 Small inductance. 0.375
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BA591
OD-323
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Abstract: No abstract text available
Text: Product specification BAP64-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 Features +0.05 0.8-0.05 High voltage, current controlled RF resistor for RF attenuators and switches + +0.1 0.6-0.1 - Low diode capacitance +0.1 1.6-0.1 0.77max Low diode forward resistance
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BAP64-02
OD-523
77max
07max
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Untitled
Abstract: No abstract text available
Text: Product specification BAP63-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High speed switching for RF signals Low diode capacitance +0.1 1.6-0.1 0.77max Low diode forward resistance For applications up to 3 GHz. +0.05
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BAP63-02
OD-523
77max
07max
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features +0.1 1.27-0.1 Critical DC electrical parameters specified at 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
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KDB5690
O-263
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BAR65-07
Abstract: No abstract text available
Text: Product specification BAR65-07 Unit: mm Features Low loss, low capacitance PIN-Diode Band switch for TV-tuners Series diode for mobile communications transmit-receive switch Unconnected pair Absolute M axim um R atings T a = 25 P aram eter D iode reverse voltage
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BAR65-07
BAR65-07
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Untitled
Abstract: No abstract text available
Text: Product specification BAR65-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low loss, low capacitance PIN-diode +0.1 2.6-0.1 1.0max Band switch for TV-tuners Series diode for mobile communications transmit-receive switch
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BAR65-03W
OD-323
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Untitled
Abstract: No abstract text available
Text: Product specification BAT62-07W SOT-343 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Symbol Value Unit Diode reverse voltage Parameter VR 40 V Forward current IF 20 mA P tot 100 mW Tj 150 T stg
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BAT62-07W
OT-343
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Untitled
Abstract: No abstract text available
Text: Product specification BA592 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Small plastic SMD package Low diode capacitance +0.1 2.6-0.1 1.0max Low diode forward resistance Small inductance. 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25
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BA592
OD-323
Electrical20
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Untitled
Abstract: No abstract text available
Text: Product specification BAP63-03 SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 ● High speed switching for RF signals +0.1 1.3-0.1 ● Low diode capacitance ● Low diode forward resistance +0.1 2.6-0.1 1.0max ● Very low series inductance
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BAP63-03
OD-323
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Untitled
Abstract: No abstract text available
Text: Product specification BAP65-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High voltage, current controlled +0.1 2.6-0.1 1.0max RF resistor for RF switches Low diode capacitance 0.375 0.475 +0.05 0.1-0.02 Low diode forward resistance low loss
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BAP65-03
OD-323
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Untitled
Abstract: No abstract text available
Text: Product specification KAP50-03 BAP50-03 SOD-323 Unit: mm +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 • Features ● Low diode capacitance. ● Low diode forward resistance. +0.1 2.6-0.1 0.375 +0.05 0.1-0.02 0.475 1.0max ■ Absolute Maximum Ratings Ta = 25℃
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