Untitled
Abstract: No abstract text available
Text: tSENSITRON 160CMQ045 160CMQ040 160CMQ035 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 406, REV.- HIGH CURRENT PLASTIC POWER SCHOTTKY RECTIFIER 45 V, 160 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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160CMQ045
160CMQ040
160CMQ035
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AN2951
Abstract: l6562 PFC boost converter design AN1792 SHORT CIRCUIT PROTECTION FOR L6562 AN1792 ST L6562 Application Note l6562 L6562 boost PFC inductor l6562 PFC design STW77N65M5
Text: AN2951 Application note 3 kW fixed-off-time FOT power factor correction Introduction In recent years, regulation in terms of electrical efficiency, electromagnetic noise, and reliability of the electronic apparatus, in all the application fields, are pushing to use power
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AN2951
AN2951
l6562 PFC boost converter design
AN1792
SHORT CIRCUIT PROTECTION FOR L6562
AN1792 ST
L6562 Application Note
l6562
L6562 boost PFC inductor
l6562 PFC design
STW77N65M5
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ZENER DIODE z91
Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
Text: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.
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HV9931DB1v2
120VAC
350mA,
HV9931
ZENER DIODE z91
ZNR 10K 271
TRANSISTOR REPLACEMENT ECG
triac cf 406
panasonic ZNR MOV
TRANSISTOR REPLACEMENT ECG 130
X2 MKP SH
mr 504 diode
SN2 357
hv9931 LED driver
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SN2 357
Abstract: triac cf 406 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG ERJ-6ENF1001V HV9931 ZENER DIODE z91 Vishay Q81 Heatsink-TO220 transistor pnp ecg 180
Text: Supertex inc. HV9931DB2v1 LED Driver Demo Board Input 230VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.
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HV9931DB2v1
230VAC
350mA,
HV9931
SN2 357
triac cf 406
ZNR 10K 271
TRANSISTOR REPLACEMENT ECG
ERJ-6ENF1001V
ZENER DIODE z91
Vishay Q81
Heatsink-TO220
transistor pnp ecg 180
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1E-14
Abstract: 1E14 MAX4214 MAX4215 MAX4217 MAX4219 MAX4222 1P NPN 2 A 98 10E4 diode
Text: * * * * * * MAX4214 FAMILY MACROMODELS -FEATURES: 230MHz Gain Bandwidth Product 5.5mA Typical Supply Current Rail-to-Rail I/O * Available in 5-Pin SOT23 MAX4214 * 8-Pin uMAX/SO (MAX4217) * 14-Pin SO/16-Pin QSOP (MAX4222) * * PART NUMBER
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MAX4214
230MHz
MAX4214)
MAX4217)
14-Pin
SO/16-Pin
MAX4222)
MAX4214
MAX4217
MAX4222
1E-14
1E14
MAX4215
MAX4217
MAX4219
MAX4222
1P NPN
2 A 98
10E4 diode
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MAGNETICA ferrite TRANSFORMER
Abstract: 1922.0001 MAGNETICA 1745.0005 ac Inverter schematics 10 kw MAGNETICA MAGNETICA TRANSFORMER UM0673 welding schematics L6563 BOM st microelectronics smd zener
Text: UM0673 User manual STEVAL-ISF001V1, 3 kW FOT PFC board based on the L6563 Introduction The power board STEVAL-ISF001V1 is a 3 kW PFC designed for industrial and domestic applications. The board must be used for demonstration purposes in order to evaluate the
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UM0673
STEVAL-ISF001V1,
L6563
STEVAL-ISF001V1
MAGNETICA ferrite TRANSFORMER
1922.0001
MAGNETICA 1745.0005
ac Inverter schematics 10 kw
MAGNETICA
MAGNETICA TRANSFORMER
UM0673
welding schematics
L6563 BOM
st microelectronics smd zener
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NV4V31MF
Abstract: Laser Diode 405 nm Laser 405 nm
Text: A Business Partner of Renesas Electronics Corporation. NV4V31MF Preliminary Data Sheet Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0100 Rev.1.00 Mar xx, 2012 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
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NV4V31MF
R08DS0045EJ0100
NV4V31MF
Laser Diode 405 nm
Laser 405 nm
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Solarex MSX-30
Abstract: Solarex MSX-20 solarex msx MSX-30 Lite MSX-30 monocrystalline solar cell photovoltaic module solarex msx 01 msx 24
Text: MSX-Lite Photovoltaic Modules MSX-Lite modules, part of Solarex’s Megamodule™ series, are designed for applications requiring a combination of light weight, compactness, and ruggedness. They are particularly useful as 12VDC power sources for expeditions, mobile communications, recreational vehicles
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12VDC
MSX-10
MSX-20
MSX-30
MSX-20
Solarex MSX-30
Solarex
solarex msx
MSX-30 Lite
monocrystalline solar cell
photovoltaic module
solarex msx 01
msx 24
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Untitled
Abstract: No abstract text available
Text: SP7619/19A Solved by TM Constant Current LED Driver • ■ ■ ■ ■ ■ ■ ■ ■ ■ FEATURES Very low dropout voltage 60mV@200mA Accurate current regulation down to dropout voltage No external components Built-in current DAC Selectable output current levels: 200mA &
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SP7619/19A
200mA)
200mA
500mA
700mA
SP7619A)
SP7619
SP7619
SP7619AER-L/TR
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NV4V31SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0070EJ0100 Rev.1.00 Jun 20, 2013 DESCRIPTION The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW . The NV4V31SF can provide excellent linearity from low to
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NV4V31SF
R08DS0070EJ0100
NV4V31SF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NV4V31SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0070EJ0100 Rev.1.00 Jun 07, 2013 DESCRIPTION The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW . The NV4V31SF can provide excellent linearity from low to
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NV4V31SF
R08DS0070EJ0100
NV4V31SF
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NV4V31SF
Abstract: No abstract text available
Text: Preliminary Data Sheet Specifications in this document are tentative and subject to change. NV4V31SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0070EJ0001 Rev.0.01 Jan 23, 2013 DESCRIPTION The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
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NV4V31SF
R08DS0070EJ0001
NV4V31SF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0200 Rev.2.00 Jun 07, 2013 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW at up to 85°C. The NV4V31MF can provide excellent linearity
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NV4V31MF
R08DS0045EJ0200
NV4V31MF
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Laser Diode 405 nm
Abstract: LD chip NV4V31MF Laser Diode 405 nm 400 mW 5N5408
Text: Preliminary Data Sheet NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0100 Rev.1.00 Mar 05, 2012 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW at up to 85°C. The NV4V31MF can provide excellent linearity
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NV4V31MF
R08DS0045EJ0100
NV4V31MF
Laser Diode 405 nm
LD chip
Laser Diode 405 nm 400 mW
5N5408
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW at up to 85°C. The NV4V31MF can provide excellent linearity
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NV4V31MF
R08DS0045EJ0200
NV4V31MF
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NV4V31MF Data Sheet Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
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NV4V31MF
R08DS0045EJ0200
NV4V31MF
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data 8873
Abstract: S100C smb connector PZT material
Text: ○ ○ ○ ○ ○ SNAP Model S100C ○ ○ ○ ○ ○ Low Cost, Epoxy Mount Accelerometer ○ DYNAMIC Sensitivity, ±20%, 25°C . Acceleration Range .
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S100C
data 8873
S100C
smb connector
PZT material
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LDA DIODE
Abstract: No abstract text available
Text: ar y n i im prel iC-NZN N-TYPE LASER DIODE DRIVER Rev B2, Page 1/17 FEATURES APPLICATIONS ♦ Peak value controlled laser diode driver for operation from CW up to 155 MHz ♦ Spike-free switching of laser currents of up to 300 mA ♦ Setting of laser power APC via external resistor
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QFN24
D-55294
LDA DIODE
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RXSP 14
Abstract: RXSP RXSP1 RXME 1 RXSP143 RXKH-2 402-AB RXSP14 RXMa 2 RXKH
Text: ASEA Info-N o. INFORMATION RFR 1143 E, Ed. 1 From /Date Reg. RFR, Jan. 1972 5634 Page 1 R elay Division Handreset indicators type RXSP 1 OUTSTANDING FEATURES • Compact indicators for protective relays, signalling equipment, etc. • Manual resetting knob
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S-721
RXSP 14
RXSP
RXSP1
RXME 1
RXSP143
RXKH-2
402-AB
RXSP14
RXMa 2
RXKH
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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diode 406 AF
Abstract: 74hc240a
Text: TOSHIBA TC74HC240AP/AF/AFW TC74HC241AP/AF TC74HC244AP/AF/AFW Octal Bus Buffer TC74HC240 Inverted, 3-State Outputs TC74HC241 Non-lnverted, 3-State Outputs TC74HC244 Non-lnverted, 3-State Outputs The TC74HC240A, 241A and 244A are high speed CMOS OCTAL BUS BUFFERS fabricated with silicon gate C2MOS
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TC74HC240AP/AF/AFW
TC74HC241AP/AF
TC74HC244AP/AF/AFW
TC74HC240
TC74HC241
TC74HC244
TC74HC240A,
74HC240A
TC74HC241A
TC74HC244A
diode 406 AF
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Untitled
Abstract: No abstract text available
Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)
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LDA100
LDA101
LDA110
LDA111
LDA200
LDA201
LDA210
LDA211
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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SMD transistor UY
Abstract: smd transistor 406 1981-R TRANSISTOR SMD catalog transistor smd 127 transistor SMD p05 smd transistor 079 LDA100 transistor a102 LDA111
Text: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 O utput C haracteristics C ollecto r C urrent mA Typical C apacitance (pF) (V e. = 1 0 V ;f = 1M Hz) C o llecto r D ark C urrent (nA)
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LDA100
LDA101
LDA110
LDA111
LDA200
LDA201
LDA210
LDA211
SMD transistor UY
smd transistor 406
1981-R
TRANSISTOR SMD catalog
transistor smd 127
transistor SMD p05
smd transistor 079
transistor a102
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