618 diode
Abstract: LL4150
Text: 1N 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data Case: DO-34, DO-35 Glass Case
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LL4150.
DO-34,
DO-35
200mA
618 diode
LL4150
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diode 648
Abstract: 1N4150 648 diode DIODE WITH SOD CASE
Text: L L 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the DO-35 case with the type designation 1N4150. Mechanical Data Case: MiniMELF Glass Case SOD-80
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DO-35
1N4150.
OD-80)
200mA
200mA,
diode 648
1N4150
648 diode
DIODE WITH SOD CASE
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Untitled
Abstract: No abstract text available
Text: 1N 4150 Small-Signal Diode Fast Switching Rectifier Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data
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LL4150.
DO-35
200mA
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Untitled
Abstract: No abstract text available
Text: L L 4150 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 50V Forward Current 200mA Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the DO-35 case with the type designation 1N4150.
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200mA
DO-35
1N4150.
OD-80C)
200mA,
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Untitled
Abstract: No abstract text available
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UDP
Super-247
Super-247â
IRFPS37N50A
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420 Diode
Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UDP
Super-247
Super-247TM
PS37N50A
IRFPS37N50A
420 Diode
719C
IRGPS40B120UDP
IRFPS37N50A
1000V 20A transistor
UJ3000
igbt 1200V 60A
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IRGPS40B120UD
Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Text: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4240A
IRGPS40B120UD
Super-247
Super-247TM
Super-247TM
IRFPS37N50A
IRFPS37N50A
IRGPS40B120UD
ic MARKING QG
1000V 20A transistor
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420 Diode
Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
Text: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UD
Super-247
Super-247TM
5M-1994.
O-274AA
420 Diode
ir igbt 1200V 40A
IRGPS40B120UD
TRANSISTOR N 1380 600 300 SC
igbt 40A 600V
3IRGPS40B120UD
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4148
Abstract: diode 4148 in 4148 DIODE D16 in 4148 PIN DIAGRAM 4148 diode 4148 diode datasheet MAX 4148 D16-4148 D16-4150
Text: D16-4148 and 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 D16-4150 Switching Diode Array FEATURES • • • 8 Diode Array Standard 16 pin Dual-In-Line Package UL 94V-0 Flammability Classification MECHANICAL • • •
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D16-4148
D16-4150
D16-4148/100V,
D16-4150/75V
D16-4148/75V,
D16-4150/50V
4148
diode 4148
in 4148
DIODE D16
in 4148 PIN DIAGRAM
4148 diode
4148 diode datasheet
MAX 4148
D16-4148
D16-4150
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diode 4148
Abstract: marking S16 EIA-481-B MSC0881 S16-4148 S16-4150 MARKING CODE S16 EIA-481-B 13"
Text: S16-4148, e3 and 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 S16-4150, e3 Switching Diode Array FEATURES • • • • 8 Diode Array SOIC 16 pin Surface Mount Package UL 94V-0 Flammability Classification RoHS compliant by adding “e3” suffix (S16-4148e3 or S16-4150e3)
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S16-4148,
S16-4150,
S16-4148e3
S16-4150e3)
EIA-481-B
S16-4148
S16-4150
MSC0881
diode 4148
marking S16
EIA-481-B
S16-4148
S16-4150
MARKING CODE S16
EIA-481-B 13"
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marking s8 diode
Abstract: diode 4148 in 4148 PIN DIAGRAM 86 soic-8 datasheet ic 7805 MSC0881 s8 marking EIA-481-B S8-4148 S8-4150
Text: S8-4148, e3 and 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 S8-4150, e3 Switching Diode Array FEATURES • • • • 4 Diode Array SOIC 8 pin Surface Mount Package UL 94V-0 Flammability Classification RoHS compliant by adding “e3” suffix (S8-4148e3 or S8-4150e3)
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S8-4148,
S8-4150,
S8-4148e3
S8-4150e3)
EIA-481-B
S8-4148
S8-4150
MSC0881
marking s8 diode
diode 4148
in 4148 PIN DIAGRAM
86 soic-8
datasheet ic 7805
s8 marking
EIA-481-B
S8-4148
S8-4150
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4R3TI60Y-080
Abstract: thyristor 5a thyristor 50V 60A THYRISTOR 800v 5A 60A diode
Text: 4R3TI60Y-080 DIODE & THYRISTOR MODULE Outline Drawings, mm 800V / 60A DIODE & THYRISTOR MODULE Features • Glass Passivation Chip · Easy Connection · Insulated Type · Large di/dt · Large dv/dt Applications · Inverters · Battery Chargers · DC Motors
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4R3TI60Y-080
4R3TI60Y-080
thyristor 5a
thyristor 50V 60A
THYRISTOR 800v 5A
60A diode
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3R3TI60E-080
Abstract: No abstract text available
Text: 3R3TI60E-080 DIODE & THYRISTOR MODULE Outline Drawings, mm 800V / 60A DIODE & THYRISTOR MODULE Features • Glass Passivation Chip · Easy Connection · Insulated Type · Large di/dt · Large dv/dt Applications · Inverters · Battery Chargers · DC Motors
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3R3TI60E-080
3R3TI60E-080
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E72445
Abstract: Diode SCR 100AMP SCR diode k1 f1892sd1200
Text: series F18 25-100Amp • Diode, SCR/Diode Modules Modules come in an industry standard package, offering nine circuits that can be used singly or as power control building blocks. All models feature highly efficient thermal management for greatly extended cycle life and are UL
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25-100Amp
E72445.
V300A
Ri057
E72445
Diode SCR
100AMP SCR
diode k1
f1892sd1200
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diode 4150
Abstract: No abstract text available
Text: DIODE MODULE DWF R 50A30/40 DWF R 50A is a non-isolated diode module designed for 3 phase rectification. IF AV 50A, VRRM 400V Easy Construction with Joint-Cathode F Type and Joint-Anode R type. Non-isolated. Mounting Base as terminals. High Surge Capability
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50A30/40
50A30
50A40
diode 4150
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DWF R 50A30/40 DWF （R） 50A is a non-isolated diode module designed for 3 phase rectification. ● IF （AV） ＝50A, VRRM＝400V Construction with Joint-Cathode（F） Type and Joint-Anode （R） type. ● Non-isolated. （Mounting Base as terminals.）
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50A30/40
VRRM400V
31max
M5X10
50A30
50A40
50ms20sec
5ms200ms
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tc122 25 6
Abstract: tc122 25
Text: DIODE MODULE DWF R 50A30/40 DWF （R） 50A is a non-isolated diode module designed for 3 phase rectification. ● IF （AV） ＝50A, VRRM＝400V Construction with Joint-Cathode（F） Type and Joint-Anode （R） type. ● Non-isolated. （Mounting Base as terminals.）
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50A30/40
VRRM400V
31max
M5X10
50A30
50A40
50ms20sec
5ms200sec
tc122 25 6
tc122 25
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MFU DIODE
Abstract: PH 4149 DD130F DD130F-100 DD130F-160 so130
Text: SANSHA ELECTRIC MFG CO 37E D n ? 2M3 / DIODE MODULE 0000102 A B S E M J T-ZZ-C? S a n R e x Power Diode Module DD130F series are designed for various rectifier circuits. DD130F has two diode chips connected in series in a package and the mounting base is
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DD130F
MFU DIODE
PH 4149
DD130F-100
DD130F-160
so130
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Untitled
Abstract: No abstract text available
Text: Central CM PD 4150 Sem icon du ctor Corp. HIGH CURRENT HIGH SPEED SW ITCHING DIODE DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CM PD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface
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CMPD4150
OT-23
100mA
200mA
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN 5100 No.5100 /I _ FP108 SA iYO, TR : PN P Epitaxial Planar Silicon T ransistor SBD : Schottky B arrier Diode DC/DC Converter Applications F e a tu re s •Composite type with a PN P transistor and a Schottky b arrier diode contained in one packge,
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FP108
FP108
2SB1121
SB10-015CP,
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MF G CO 37E D B ? SM3 □□□□IDE 6 B S E M J T-23- OD130F MODULE SanRex Pow er Diode Module DD130F series are designed for various rectifier circuits. DD130F has two diode chips connected in series in a package and the mounting base is
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T-23-
OD130F
DD130F
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Untitled
Abstract: No abstract text available
Text: DIODE MODULES Ratings and Specifications Í m iímíiibíI 600 volts class general use diode modules/E series Dovicu ty p i’ V rrm V rsm lo Ifsm Ft V fm Irrm Rth j-C Package Volts Volts Amps. Amps. A2s Volts mA °C/W . 6RI30F 060 600 660 30 360 520 1.10
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6RI30F
R604A
6Rlb0E-060
R605A
R606A
6RI100E
SRI150E-060
ERG28-12
ERG78-12
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LT 2806
Abstract: trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12
Text: z r — •$? • y — h NEC X " f y 3- > 'J $'<4 K Switching Diode 1SS123 w .n & M x t ° ^ = ¥ v 7 7; u i i v f; = i > ^ 7 ; u ^ y ^ - - k w & T s 'iv + y v m Silicon Epitaxial Double Diode (Series Connected) High Speed Switching W& / PACKAGE DIMENSIONS
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1SS123
LT 2806
trr M7
diode dc m7
pnp 855
1SS123
JT MARKING
1SS12
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