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    DIODE 424 Search Results

    DIODE 424 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 424 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hc4-dc12v

    Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
    Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,


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    PDF 25Y-3N, 25Y-3S 25-3X, 1071-A 25-3S 25-3TA 25-M3 hc4-dc12v HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F

    BD304

    Abstract: SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A
    Text: SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4241, Rev- HERMETIC ULTRAFAST DIODE Description: 3Amp, 20nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Data communication and telecommunications system equipment


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    PDF SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A Mil-Prf-19500 BD304 SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A

    SXX175UF3A

    Abstract: BD304 SXX200UF3A SXX225UF3A SXX250UF3A
    Text: SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4241, Rev- HERMETIC ULTRAFAST DIODE Description: 3Amp, 20nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Data communication and telecommunications system equipment


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    PDF SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A Mil-Prf-19500 SXX175UF3A BD304 SXX200UF3A SXX225UF3A SXX250UF3A

    transistor C 4242

    Abstract: SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A
    Text: SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4242, Rev- HERMETIC ULTRAFAST DIODE Description: 1Amp, 15nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Datacommunication and telecommunication system equipment


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    PDF SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A Mil-Prf-19500 SXX17asheet transistor C 4242 SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A

    SXX225UF-A

    Abstract: SXX175UF-A SXX200UF-A SXX250UF-A
    Text: SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATASHEET 4242, Rev A HERMETIC ULTRAFAST DIODE Description: 1Amp, 15nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Datacommunication and telecommunication system equipment


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    PDF SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A Mil-Prf-19500 SXX225UF-A SXX175UF-A SXX200UF-A SXX250UF-A

    SVC321SPA

    Abstract: varactor diode AM EN699H 3881 AM receiver 6993
    Text: Ordering number :EN699H SVC321SPA Diffused Junction Type Sillicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC321SPA is a varactor diode with a good linearity and high capacitance raito that is capable of


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    PDF EN699H SVC321SPA SVC321SPA SVC321SPA] varactor diode AM EN699H 3881 AM receiver 6993

    SVC321SPA

    Abstract: varactor diode AM 3881
    Text: Ordering number :EN699H SVC321SPA Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC321SPA is a varactor diode with a good linearity and high capacitance raito that is capable of


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    PDF EN699H SVC321SPA SVC321SPA SVC321SPA] varactor diode AM 3881

    UC1612J

    Abstract: UC1612L UC3612 UC3612DP UC3612J UC3612N UC1612
    Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage


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    PDF UC1612 UC3612 UC1612 UC1612J UC1612L UC3612 UC3612DP UC3612J UC3612N

    Untitled

    Abstract: No abstract text available
    Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage


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    PDF UC1612 UC3612 UC3612

    DIODE DATABOOK

    Abstract: FLYBACK CLAMPING DIODE UC1612 UC3612
    Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage


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    PDF UC1612 UC3612 UC1612 DIODE DATABOOK FLYBACK CLAMPING DIODE UC3612

    FLYBACK CLAMPING DIODE

    Abstract: Schottky Diode 40V 5A Schottky Diode 40V 5A dual Schottky Diode 50V 3A DIODE DATABOOK DUAL DIODE two transistor forward UC1612 UC3612
    Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage


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    PDF UC1612 UC3612 UC1612 100mA FLYBACK CLAMPING DIODE Schottky Diode 40V 5A Schottky Diode 40V 5A dual Schottky Diode 50V 3A DIODE DATABOOK DUAL DIODE two transistor forward UC3612

    Schottky diode Die flip chip

    Abstract: UC1612 UC1612J UC1612L UC3612 UC3612DP UC3612J UC3612N
    Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage


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    PDF UC1612 UC3612 UC1612 Schottky diode Die flip chip UC1612J UC1612L UC3612 UC3612DP UC3612J UC3612N

    UTZ-SC0331

    Abstract: ndv4916e NM424
    Text: [ UTZ-SC0331_2 ] 2012/10/02 Violet Laser Diode NDV4916E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 410-420nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm ( + .03


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    PDF UTZ-SC0331 NDV4916E CW120mW 410-420nm ndv4916e NM424

    UTZ-SC0332

    Abstract: No abstract text available
    Text: [ UTZ-SC0332_2 ] 2012/10/02 Violet Laser Diode NDV4A16E Engineering Sample Outline Dimension Features • Optical Output Power: CW120mW • Peak Wavelength: 420-425nm • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm ( + .03


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    PDF UTZ-SC0332 NDV4A16E CW120mW 420-425nm

    Untitled

    Abstract: No abstract text available
    Text: [ UTZ-SC0332_2 ] 2012/10/02 Violet Laser Diode NDV4A16E Engineering Sample  Features Outline Dimension • Optical Output Power: CW120mW • Peak Wavelength: 420-425nm • Can Type:5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm


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    PDF UTZ-SC0332 NDV4A16E CW120mW 420-425nm

    Untitled

    Abstract: No abstract text available
    Text: [ UTZ-SC0331_2 ] 2012/10/02 Violet Laser Diode NDV4916E Engineering Sample  Features Outline Dimension • Optical Output Power: CW120mW • Peak Wavelength: 410-420nm • Can Type:5.6 Floating Mounted with Photo Diode and Zener Diode Unit mm


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    PDF UTZ-SC0331 NDV4916E CW120mW 410-420nm

    FLYBACK CLAMPING DIODE

    Abstract: Schottky Diode 50V 3A DIODE DATABOOK power Schottky bridge Schottky Diode 40V 5A Schottky Diode 40V 5A bridge PLCC-20 SOIC-16 UC1610 UC2610
    Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection


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    PDF UC1610 UC2610 UC3610 UC1610 100mA FLYBACK CLAMPING DIODE Schottky Diode 50V 3A DIODE DATABOOK power Schottky bridge Schottky Diode 40V 5A Schottky Diode 40V 5A bridge PLCC-20 SOIC-16 UC2610

    Untitled

    Abstract: No abstract text available
    Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection


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    PDF UC1610 UC2610 UC3610 UC3610DW UC3610DWTR UC3610N UC3610Q UC3610QTR SSYA008

    SMD diode sg 46

    Abstract: SMD diode sg 03
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS


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    PDF BAP50-03 SCA61 SMD diode sg 46 SMD diode sg 03

    Untitled

    Abstract: No abstract text available
    Text: UC1612 UC3612 y ^ UNITRODE Dual Schottky Diode FEATURES DESCRIPTION • The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. Monolithic Two Diode Array Exceptional Efficiency


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    PDF UC1612 UC3612 UC3612 100mA

    diode a62

    Abstract: BAP51-03 diode smd ED 74 lm 9805
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance


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    PDF BAP51 BAP51-03 diode a62 BAP51-03 diode smd ED 74 lm 9805

    Untitled

    Abstract: No abstract text available
    Text: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection


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    PDF UC1610 UC2610 UC3610 capC1610 UC3610 100mA 030S4

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS u im UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection


    OCR Scan
    PDF UC1610 UC2610 UC3610

    Untitled

    Abstract: No abstract text available
    Text: UC1610 UC2610 UC3610 UNITROOE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection


    OCR Scan
    PDF UC1610 UC2610 UC3610 100mA