BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
MAM139
OD110)
OD110
SCDS47
117021/1100/01/pp8
BA792
top mark smd Philips
Diode smd code 805
SMD MARKING 541 DIODE
279-27
smd diode marking kda
marking code kda
smd code marking 777
smd diode marking 77
S4 SMD diode mark
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SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF
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M3D178
BA792
MAM139
OD110)
OD110
SCDS47
113061/1100/01/pp8
SMD MARKING 541 DIODE
smd diode 708
BA792
Diode smd code 805
SOD110
S4 SMD diode mark
MCC SMD DIODE
SMD MARK CODE s4
BP317
diode marking code 777
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NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
NX8570SD
409d
766d
ETALON
362d
TLD 521
315D
346D
377D
967D
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1583 Series
Abstract: 362d 766d
Text: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
1583 Series
362d
766d
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362d
Abstract: 601 Opto isolator 766d transistor NEC D 587 315D 346D 377D 409D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
601 Opto isolator
766d
transistor NEC D 587
315D
346D
377D
409D
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362d
Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
315D
346D
377D
NX8570SA
b 803 a
NX8570SD
933D
618D
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Hitachi DSA002726
Abstract: No abstract text available
Text: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a
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HL1553
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HL1553:
Hitachi DSA002726
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362d
Abstract: 315D 346D 377D NX8571SA
Text: DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
362d
315D
346D
377D
NX8571SA
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537D
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
537D
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HL1569AF
Abstract: ld501 Hitachi DSA0047
Text: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1569AF
ADE-208-834A
HL1569AF
ld501
Hitachi DSA0047
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Ea 1530 A
Abstract: Hitachi DSA0087 HL1569AF
Text: HL1569AF 1.55 µm Laser Diode with EA Modulator ADE-208-834A Z 2nd Edition Dec. 2000 Description The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1569AF
ADE-208-834A
HL1569AF
HL1569AFollyer
Ea 1530 A
Hitachi DSA0087
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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electroabsorption
Abstract: ld501 DFB ea HL1553 Hitachi DSA00230 2488-32
Text: HL1553 1.55 µm Laser Diode with EA Modulator ADE-208-395B Z 3rd Edition Dec. 2000 Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as
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HL1553
ADE-208-395B
HL1553
HL1553:
electroabsorption
ld501
DFB ea
Hitachi DSA00230
2488-32
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10 gb laser diode
Abstract: Hitachi DSA0095 HL1513AF
Text: HL1513AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1406 Z Preliminary 1st Edition Feb. 2001 Description The HL1513AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1513AF
10Gb/s
ADE-208-1406
HL1513AF
HL1513AF:
10 gb laser diode
Hitachi DSA0095
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smf80km
Abstract: Hitachi DSA00280
Text: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405A Z Rev.1 Feb. 2002 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1511AF
10Gb/s
ADE-208-1405A
HL1511AF
HL1511AF:
smf80km
Hitachi DSA00280
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hitachi sr 2001
Abstract: HL1511AF 10 gb laser diode Hitachi DSA0047
Text: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1511AF
10Gb/s
ADE-208-1405
HL1511AF
HL1511AF:
hitachi sr 2001
10 gb laser diode
Hitachi DSA0047
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10 gb laser diode
Abstract: Hitachi DSA0095 HL1511AF diode hitachi
Text: HL1511AF 1.55 µm 10Gb/s Laser Diode with EA Modulator ADE-208-1405 Z Preliminary 1st Edition Feb. 2001 Description The HL1511AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum well (MQW) structure. An electro-absorption (EA) modulator is integrated with the laser diode. It is
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HL1511AF
10Gb/s
ADE-208-1405
HL1511AF
HL1511AF:
10 gb laser diode
Hitachi DSA0095
diode hitachi
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'iE D • bbSBTBl D0Eb2Eb 433 BAS45 LOW LEAKAGE DIODE Switching diode with a very low reverse current, encapsulated in a subminiature glass DO-34 envelope. QUICK REFERENCE DATA Continuous reverse voltage vR max. 125 V Forward voltage
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BAS45
DO-34)
DO-34
OD-68)
bbS3T31
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television
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BY328
bbS3T31
BY328.
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD250HB UL;E76102 M Power Diode Module D D 250H B series are designed for various rectifier circuits. D D 250H B has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage
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DD250HB
E76102
00Q20bA
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Philips diode tFR
Abstract: BY328 BY-328
Text: SLE ]> PHILIPS INTERNATIONAL 711DÔ2b 0040441 bbT • PHIN BY328 SbE D T -O t ' 1 7 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television
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BY328
BY328
7Z77830
7Z77828
BY328.
Philips diode tFR
BY-328
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HIGH VOLTAGE DIODE 20kv 1A
Abstract: Pulse generator circuit 20KV DIODE HIGH VOLTAGE DIODE 20kv 20KV TVR-20 0b7b743
Text: AMERICAN/ELECTRONIC b3E J> • 0b7b743 Q001D15 433 mZT>I HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
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0b7b743
ApproximVR-20
UL94V-0
HIGH VOLTAGE DIODE 20kv 1A
Pulse generator circuit
20KV DIODE
HIGH VOLTAGE DIODE 20kv
20KV
TVR-20
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