biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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AN1149
Abstract: P N Junction diode
Text: application brief AB20 3A replaces AN1149 3A Advanced Electrical Design Models Table of Contents Diode Equation Forward Voltage Model 2 Derivation of Diode Model 2 Calculation of Diode Model Parameters 2 “Worst case” Diode Models 3 Advanced Thermal Modeling Equations
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AN1149
P N Junction diode
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semikron skiip 942
Abstract: No abstract text available
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Skiip 942 gb 120 317 ctv f
Abstract: semikron skiip 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Skiip 942 gb 120 317 ctv f
Abstract: ctv circuit semikron skiip 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Skiip 942 gb 120 317 ctv f
Abstract: semikron skiip 942 skiip 942 gb 120 317 skiip gd 120 skiip gb 120 IC-900A skiip 942 GD 120 317 CTV SKIIP CASE 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
Skiip 942 gb 120 317 ctv f
semikron skiip 942
skiip 942 gb 120 317
skiip gd 120
skiip gb 120
IC-900A
skiip 942 GD 120 317 CTV
SKIIP CASE 942
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diode 439
Abstract: No abstract text available
Text: BB 439 Silicon Variable Capacitance Diode 2 • For VHF tuned circuit applications 1 • High figure of merit VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 439 white 2 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage
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VPS05176
EHA07001
OD-323
Oct-01-1999
EHD07036
diode 439
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green color ring diode
Abstract: No abstract text available
Text: L L 41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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DO-35
BAT41.
OD-80C)
100uA/300uS
300us
100OC
200mA
green color ring diode
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Untitled
Abstract: No abstract text available
Text: BB 439 Silicon Variable Capacitance Diode 2 For VHF tuned circuit applications 1 High figure of merit VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BB 439 white 2 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR
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VPS05176
EHA07001
OD-323
Nov-08-2000
EHD07036
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hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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HP8640B
Abstract: HP83595A HSMP-3880 HP11612A HP436A HSMP-3820 HSMP-3830 HSMP-3890 HP8565
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled
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5091-4932E
5966-0780E
HP8640B
HP83595A
HSMP-3880
HP11612A
HP436A
HSMP-3820
HSMP-3830
HSMP-3890
HP8565
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hp11612a
Abstract: HP8640B HP8565A HP436A HP83595A HSMP-3820 Microwave PIN diode HSMP-3830 HSMP-3880 HSMP-3890
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled
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Untitled
Abstract: No abstract text available
Text: DS2906SA Rectifier Diode DS5922-1.0 November 2007 LN25723 FEATURES KEY PARAMETERS Double Side Cooling VRRM IF(AV) IFSM High Surge Capability 4000V 5651A 83000A APPLICATIONS Rectification Free-wheel Diode DC Motor Control Power Supplies Welding Battery Chargers
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DS2906SA
DS5922-1
LN25723)
3000A
DS2906SA40
DS2906SA39
DS2906SA38
DS2906SA37
DS2906SA36
DS2906SA35
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Untitled
Abstract: No abstract text available
Text: DS2906SA Rectifier Diode DS5922-1.1 March 2009 LN26638 FEATURES KEY PARAMETERS Double Side Cooling VRRM IF(AV) IFSM High Surge Capability 4000V 5651A 83000A APPLICATIONS Rectification Free-wheel Diode DC Motor Control Power Supplies Welding Battery Chargers
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DS2906SA
DS5922-1
LN26638)
3000A
DS2906SA40
DS2906SA39
DS2906SA38
DS2906SA37
DS2906SA36
DS2906SA35
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DS2906SZ
Abstract: DS2906SZ35 DS2906SZ36 DS2906SZ37 DS2906SZ38 DS2906SZ39 DS2906SZ40
Text: DS2906SZ DS2906SZ Rectifier Diode Replaces July 2000 version, DS4186-4.1 DS4186-5.0 October 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 5651A IFSM APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control
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DS2906SZ
DS4186-4
DS4186-5
3000A
DS2906SZ40
DS2906SZ39
DS2906SZ38
DS2906SZ37
DS2906SZ36
DS2906SZ
DS2906SZ35
DS2906SZ36
DS2906SZ37
DS2906SZ38
DS2906SZ39
DS2906SZ40
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DRD4350A40
Abstract: No abstract text available
Text: DRD4350A40 Rectifier Diode DS5985-1 January 2011 LN28006 FEATURES KEY PARAMETERS • Double Side Cooling High Surge Capability VRRM IF(AV) IFSM 4000V 4346A 83000A APPLICATIONS Rectification Free-wheel Diode DC Motor Control Power Supplies
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DRD4350A40
DS5985-1
LN28006)
3000A
DRD4350A39
DRD4350A38
DRD4350A37
DRD4350A36
DRD4350A35
DRD4350A40
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S440GA
Abstract: No abstract text available
Text: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600
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25deg
100deg
S440GA
S440GA
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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modulator circuit
Abstract: BY438 Philips diode tFR
Text: N AMER PHILIPS/ DISCR ETE bRE » • bbS3131 D0Eb471 2HT ■ APX BY438 A PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television receivers. The
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bbS3131
D0Eb471
BY438
OD-64.
BY438.
modulator circuit
BY438
Philips diode tFR
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3131 D0Eb471 £4^ « A P X bRE » A BY438 PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The
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bbS3131
D0Eb471
BY438
OD-64.
BY438.
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Untitled
Abstract: No abstract text available
Text: 1N4386 asi SILICON MULTIPLIER VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D O - 4 The 1N 4396 is a High Power Silicon Multiplier Varactor Diode. s Y M B O L MAXIMUM RATINGS 10.28 0 250 6.35 Vr 250 V P diss 20 W @ Tc = 25 °C J Tj -65 °C to +150 °C T stg -65 °C to +175 °C
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1N4386
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ALPs modulator
Abstract: BY438 diode BY438 JI75 TRANSISTOR D 819
Text: SbE ]> 7110ÖSL 0 040 45 1 SOfl • P H I N BY438 P H IL IP S INTERNATIONAL T-OI-is SbE D PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The
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BY438
OD-64.
BY438.
7Z77828
ALPs modulator
BY438
diode BY438
JI75
TRANSISTOR D 819
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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