1N4448
Abstract: L4448
Text: L L 4448 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the DO-35 case with the type designation 1N4448.
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DO-35
1N4448.
OD-80)
100mA
150OC
100MHz,
1N4448
L4448
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Untitled
Abstract: No abstract text available
Text: 1N 4448 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4448.
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150mA
LL4448.
DO-35
150OC
100uA
100MHz,
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MINI-MELF DIODE BLACK CATHODE
Abstract: F 407 Diode
Text: L L 4448 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the
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150mA
DO-35
1N4448.
OD-80C)
100mA
150OC
100MHz,
MINI-MELF DIODE BLACK CATHODE
F 407 Diode
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Untitled
Abstract: No abstract text available
Text: 1N 4448 Small-Si gnal D i ode Fast Swi tchi ng D i ode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4448. Mechanical Data Case: DO-35 Glass Case
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LL4448.
DO-35
500erwise
150OC
100uA
100MHz,
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CDST-4448-G
Abstract: No abstract text available
Text: SMD Switching Diode CDST-4448-G - High Speed RoHS Device + Features SOT-23 - Fast switching diode. 0.119 3.00 0.110 (2.80) - Surface mount package ideally suited for automatic insertion. - For general purpose switching applications. 3 0.056 (1.40) 0.047 (1.20)
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CDST-4448-G
OT-23
MILSTD-750,
QW-B0022
CDST-4448-G
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1N 2002 diode
Abstract: 1N4448 LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4448
LL4448.
1N 2002 diode
1N4448
LL4448
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Untitled
Abstract: No abstract text available
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4448
LL4448.
Characte00
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1N 2002 diode
Abstract: diode datasheet 4448 1N4448 LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4448. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4448
LL4448.
1N 2002 diode
diode datasheet 4448
1N4448
LL4448
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PDF
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1N4448
Abstract: LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand This diode is also available in MiniMELF case with the type designation LL4448. XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35
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1N4448
LL4448.
DO-35
1N4448
LL4448
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1N4448
Abstract: LS4448 diode 4448
Text: LS4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in QuadroMELF case especially LS-34 suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448. QuadroMELF Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter
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LS4448
LS-34
1N4448.
1N4448
LS4448
diode 4448
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Untitled
Abstract: No abstract text available
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LL4448
1N4448
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1N4448
Abstract: LL4448
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LL4448
1N4448
1N4448
LL4448
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1N4448
Abstract: LS4448
Text: LS4448 SILICON EPITAXIAL PLANAR DIODE LS-34 fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LS4448
LS-34
1N4448
1N4448
LS4448
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1N4448
Abstract: LS4448
Text: LS4448 SILICON EPITAXIAL PLANAR DIODE LS-34 fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LS4448
LS-34
1N4448
1N4448
LS4448
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1N4448
Abstract: LL4448
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE LL-34 Cathode band fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LL4448
LL-34
1N4448
1N4448
LL4448
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1N4448
Abstract: LL4448
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE LL-34 Cathode band fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LL4448
LL-34
1N4448
1N4448
LL4448
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5KV fast recovery DIODE
Abstract: 1N4448W
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot
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1N4448W
OD-123
5KV fast recovery DIODE
1N4448W
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1N4448W
Abstract: 5KV fast recovery DIODE
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot
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1N4448W
OD-123
1N4448W
5KV fast recovery DIODE
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Untitled
Abstract: No abstract text available
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot
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Original
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1N4448W
OD-123
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1N4448W
Abstract: No abstract text available
Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot
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1N4448W
OD-123
1N4448W
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1N4448
Abstract: jy 1n4448 LL4448 MARK 1N p5001
Text: 1N 4448 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max. 1.90 This diode is also available in MiniMELF case with type desigantion LL4448. Cathode M ark max. 0.520 Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 °C
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OCR Scan
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LL4448.
DO-35
1N4448
1N4448
jy 1n4448
LL4448
MARK 1N
p5001
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Untitled
Abstract: No abstract text available
Text: Central IIV Sem i c o n d u c t o r C o r p . C M PD 4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface
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OCR Scan
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CMPD4448
OT-23
100mA
100i2,
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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OCR Scan
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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Untitled
Abstract: No abstract text available
Text: IMBD4448 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diodes ♦ Fast switching diode in case SOT-23, especially suited for autom atic insertion. ♦ • j| This diode is also available in other case :f styles including: the DO-35 case with the
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OCR Scan
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IMBD4448
OT-23
OT-23,
DO-35
1N4448,
LL4448,
1N4448W
OT-23
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