Untitled
Abstract: No abstract text available
Text: GLP-447 5-300 mW Portable Blue Diode Laserpointer Portable 447nm diode laserpointer, featuring push button, compact size, and long lifetime. Specifications Wavelength Output Power Transverse Mode Operating Mode Beam Divergence full angle Beam Diameter (at the aperature)
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GLP-447
447nm
TEM00
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Untitled
Abstract: No abstract text available
Text: RLTMDL-447 1-500 mW Blue Laser Diode Modul Blue diode laser module at 447nm is made features of ultra compact, long lifetime, low cost and easy operating, which is used in measurement, communication, spectrum analysis, etc. Specifications Wavelength Output Power
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RLTMDL-447
447nm
90-260VAC)
TEM00
1-30kHz,
SMA-905/FC
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Untitled
Abstract: No abstract text available
Text: GLP-III-447 5-1000 mW Portable Blue Diode Laser System Portable 447nm Diode Laser System for professional application, featuring 4-way safety system, catch button for convenient operation, and LED status indicator 4-way safety system: 1. 2. 3. 4. slideable front cover
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GLP-III-447
447nm
TEM00
CR123A
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4245
Abstract: SMD M1B BAT56 SMD M1B diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current
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BAT56
SCD24
4245
SMD M1B
BAT56
SMD M1B diode
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smd diode 708
Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed
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BAT93
SCD24
smd diode 708
SMD M1B diode
M1B Diode smd
CD 4938
Silicon Schottky Diode sod123
SMD M1B
str 541
BAT93
SCD24
ir 7811
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN2819D
SVC351
1194B
SVC351]
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Untitled
Abstract: No abstract text available
Text: Part: SMBJ400A Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature
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SMBJ400A
10x1000
10x1000Â
10x160Â
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Untitled
Abstract: No abstract text available
Text: Part: SMBJ400C Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature
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SMBJ400C
10x1000
10x1000Â
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Untitled
Abstract: No abstract text available
Text: Part: SMBJ400CA Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature
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SMBJ400CA
10x1000
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SVC364
Abstract: No abstract text available
Text: Ordering number :EN4275A SVC364 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic
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EN4275A
SVC364
SVC364]
125such
SVC364
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SVC351
Abstract: 4565l
Text: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN2819D
SVC351
1194B
SVC351]
SVC351
4565l
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SVC364
Abstract: No abstract text available
Text: Ordering number :EN4275A SVC364 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic
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EN4275A
SVC364
SVC364]
12such
SVC364
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Untitled
Abstract: No abstract text available
Text: Part: SMBJ400 Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature
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SMBJ400
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Untitled
Abstract: No abstract text available
Text: Part: 5KP6.5 Series: 5000W Axial Leaded TVS Diode - 5KP Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2000.00 Maximum Temperature Max Temp (°C )
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DS2106SY
Abstract: DS2106SY35 DS2106SY36 DS2106SY37 DS2106SY38 DS2106SY39 DS2106SY40
Text: DS2106SY DS2106SY Rectifier Diode Replaces October 2001 version, DS4182-5.0 DS4182-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 3830A IFSM APPLICATIONS 62500A ■ Rectification ■ Freewheel Diode
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DS2106SY
DS4182-5
2500A
DS2106SY40
DS2106SY39
DS2106SY38
DS2106SY37
DS2106SY36
DS2106SY
DS2106SY35
DS2106SY36
DS2106SY37
DS2106SY38
DS2106SY39
DS2106SY40
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Untitled
Abstract: No abstract text available
Text: Part: 5KP6.5C Series: 5000W Axial Leaded TVS Diode - 5KP Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2000.00 Maximum Temperature Max Temp (°C )
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10x1000
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN3048B SVC363 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN3048B
SVC363
SVC363
1214B
SVC363]
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cd3100
Abstract: EN3048 SVC363 EN3048B
Text: Ordering number :EN3048B SVC363 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN3048B
SVC363
SVC363
1214B
SVC363]
cd3100
EN3048
EN3048B
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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thyristor code
Abstract: 1KHZ thyristor thyristor h 250 tb 15 R216CH12FJO Anti-Parallel Thyristor
Text: lllfESTCODE SEMICONDUCTORS * Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazaidous materials. Integral water cooled unit available.
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SN151JL
thyristor code
1KHZ thyristor
thyristor h 250 tb 15
R216CH12FJO
Anti-Parallel Thyristor
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DIODE BJE
Abstract: Philips diode variable capacitance diode oas top marking c3 sot23 A562 BBY40 "Variable Capacitance Diode" Variable Capacitance Diode
Text: bTE D N AMER PHILIPS/DISCRETE • ^53^31 0G2t>447 TET H A P X Product specification Philips Semiconductors_ BBY40 Variable capacitance diode DESCRIPTION The BBY40 is a variable capacitance diode in a plastic SO T23 envelope. It is intended for
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0D2b447
BBY40
BBY40
DIODE BJE
Philips diode
variable capacitance
diode oas
top marking c3 sot23
A562
"Variable Capacitance Diode"
Variable Capacitance Diode
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Westcode thyristor
Abstract: WESTCODE TB R216CH12FJO 1KHZ thyristor thyristor T 95 F 700 SM12CXC190 back to back thyristor module thyristor 910 R216CH12 westcode diodes S
Text: WESTCODE SEMICONDUCTORS« »«-»» Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazardous materials. Integral water cooled unit available.
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151JL
Westcode thyristor
WESTCODE TB
R216CH12FJO
1KHZ thyristor
thyristor T 95 F 700
SM12CXC190
back to back thyristor module
thyristor 910
R216CH12
westcode diodes S
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BB135
Abstract: smd DIODE code marking Q UHF variable capacitance diode marking S "Variable Capacitance Diode"
Text: ^ 53^ 31 Philips Semiconductors □ Q Z b 3 cì ‘ì APX 447 Preliminary specification BB135 UHF variable capacitance diode bTE » " " " N AUER PHILIPS/DISCRETE QUICK REFERENCE DATA DESCRIPTION The BB135 is a silicon, double-implanted variable capacitance diode in planar
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BB135
OD323.
BB135
bbS3131
smd DIODE code marking Q
UHF variable capacitance diode marking S
"Variable Capacitance Diode"
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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