Untitled
Abstract: No abstract text available
Text: SKCD 47 C 120 I HD Absolute Maximum Ratings Symbol Conditions Values Unit VRRM IF AV Tj = 25 °C, IR = 0.2 mA 1200 V Ts = 80 °C, Tj = 150 °C 50 A IFSM 10 ms sin 180° Tj = 25 °C 790 A Tj = 150 °C 640 A 150 °C Tjmax CAL-DIODE Electrical Characteristics
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SKCD 47 C 060 I3 Absolute Maximum Ratings Symbol Conditions Values Unit VRRM IF AV Tj = 25 °C, IR = 0.2 mA 600 V Ts = 80 °C, Tj = 150 °C 60 A IFSM 10 ms sin 180° 720 A 150 °C Tj = 25 °C A Tj = 150 °C Tjmax CAL-DIODE Electrical Characteristics Symbol
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SKCD 47 C 120 I3 Absolute Maximum Ratings Symbol Conditions Values Unit VRRM IF AV Tj = 25 °C, IR = 0.2 mA 1200 V Ts = 80 °C, Tj = 150 °C 40 A IFSM 10 ms sin 180° Tj = 25 °C 720 A Tj = 150 °C 550 A 150 °C Tjmax CAL-DIODE Electrical Characteristics
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SKCD 47 C 170 I HD Absolute Maximum Ratings Symbol Conditions Values Unit VRRM IF AV Tj = 25 °C, IR = 0.1 mA 1700 V Ts = 80 °C, Tj = 150 °C 50 A IFSM 10 ms sin 180° Tj = 25 °C 680 A Tj = 150 °C 650 A 150 °C Tjmax CAL-DIODE Electrical Characteristics
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SKCD 47 C 170 I Absolute Maximum Ratings Symbol Conditions Values Unit VRRM IF AV Tj = 25 °C, IR = 0.2 mA 1700 V Ts = 80 °C, Tj = 150 °C 40 A IFSM 10 ms sin 180° Tj = 25 °C 720 A Tj = 150 °C 550 A 150 °C Tjmax CAL-DIODE Electrical Characteristics Symbol
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VUM 33-05 Power MOSFET Stage for Boost Converters ID25 = 47 A VDSS = 500 V RDS on = 0.12 W Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 4 6 1 VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ Continuous
|
Original
|
33-05N
|
PDF
|
MOSFET 1 KW
Abstract: mosfet base inverter with chargers circuit 350 v 30 a diode rectifier
Text: VUM 33-05 ID25 = 47 A VDSS = 500 V RDS on = 0.12 W Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 4 6 1 VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kW Continuous
|
Original
|
33-05N
26diF/dt
MOSFET 1 KW
mosfet base inverter with chargers circuit
350 v 30 a diode rectifier
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VUM 33-05N ID25 = 47 A VDSS = 500 V RDS on = 0.12 Ω Power MOSFET Stage for Boost Converters Module for Power Factor Correction VRRM (Diode) VDSS V V 600 500 5 Type 1 3 2 7 8 1 4 6 3 4 2 VUM 33-05N 5 7 8 Conditions VDSS VDGR VGS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 kΩ
|
Original
|
33-05N
33-05N
150fc
|
PDF
|
702 TRANSISTOR smd
Abstract: SIEMENS AVR GENERATOR fire alarm abstract using thermistor and op-amp Phycomp 2238 Laser power supply abstract 2238 916 15636 3006p 205 Variable Resistor 2238-787-15636 phycomp 2322-702-60102 capacitor 0402 X7R 100NF 50V 10
Text: APPLICATION NOTE OM5811 minidil demo board for TZA3010/11/47 laser drivers covering 30-3200 Mb/s AN10191-01 TP97036.2/F5.5 Philips Semiconductors OM5811 minidil demo board for TZA3010/11/47 laser drivers covering 30-3200 Mb/s Application Note AN10191-01 Abstract
|
Original
|
OM5811
TZA3010/11/47
AN10191-01
TP97036
TZA3010/11/47
OM5811.
TZA3010,
TZA3011and
702 TRANSISTOR smd
SIEMENS AVR GENERATOR
fire alarm abstract using thermistor and op-amp
Phycomp 2238
Laser power supply abstract
2238 916 15636
3006p 205 Variable Resistor
2238-787-15636
phycomp 2322-702-60102
capacitor 0402 X7R 100NF 50V 10
|
PDF
|
IRGR4045D
Abstract: No abstract text available
Text: IRGR4045DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • IC 6.0A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
|
Original
|
IRGR4045DPbF
Pa641
EIA-481
EIA-541.
EIA-481.
IRGR4045D
|
PDF
|
47N10L
Abstract: transistor FS 22 SM 10 j50g SPB47N10L SPP47N10L
Text: Preliminary Data SPP 47N10L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 100 V 47 A • Logic Level
|
Original
|
47N10L
SPP47N10L
P-TO220-3-1
Q67040-S4177
SPB47N10L
P-TO263-3-2
Q67040-S4176
47N10L
transistor FS 22 SM 10
j50g
SPB47N10L
SPP47N10L
|
PDF
|
IRFPS43N50K
Abstract: SiHFPS43N50K
Text: IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.078 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
|
IRFPS43N50K,
SiHFPS43N50K
SUPER-247TM
18-Jul-08
IRFPS43N50K
|
PDF
|
DIODE BUZ smd
Abstract: Q67040-S4010-A5 s4010 BUZ102SL E3045 Q67040-S4010-A2 102SL
Text: BUZ 102SL Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 47 A • Logic Level • dv/dt rated • 175 ˚C operating temperature
|
Original
|
102SL
BUZ102SL
P-TO263-3-2
Q67040-S4010-A6
BUZ102SL
E3045
P-TO220-3-1
Q67040-S4010-A2
E3045A
DIODE BUZ smd
Q67040-S4010-A5
s4010
E3045
102SL
|
PDF
|
IRFPS43N50K
Abstract: SiHFPS43N50K
Text: IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.078 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
|
Original
|
IRFPS43N50K,
SiHFPS43N50K
2002/95/EC
Super-247
11-Mar-11
IRFPS43N50K
|
PDF
|
|
|
47N60S5
Abstract: 47n60 SPW47N60S5
Text: SPW47N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 • Ultra low gate charge G,1 • Periodic avalanche proved 1 S,3 2 3 • Extreme dv/dt rated COOLMOS • Optimized capacitances
|
Original
|
SPW47N60S5
SPWx0N60S5
SPW47N60S5
P-TO247
47N60S5
Q67040-S4140
47N60S5
47n60
|
PDF
|
OF IGBT
Abstract: GB50RF60K
Text: GB50RF60K Vishay High Power Products IGBT PIM Module, 48 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft
|
Original
|
GB50RF60K
18-Jul-08
OF IGBT
GB50RF60K
|
PDF
|
1SV147
Abstract: toshiba lable information
Text: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage
|
OCR Scan
|
1SV147
1SV147
toshiba lable information
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1SV147 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rs : rs = 0.30 Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Reverse Voltage
|
OCR Scan
|
1SV147
|
PDF
|
V147
Abstract: 1SV147
Text: 1SV147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rs : rs = 0.30 Typ. Small Package r M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
|
OCR Scan
|
1SV147
50MHz
V147
1SV147
|
PDF
|
1SV147
Abstract: toshiba lable information
Text: 1SV 147 TOSHIBA 1 S V 1 47 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm FM RADIO BAND TUNING APPLICATIONS • • Low rs : rs = 0.3 Í1 Typ. Small Package (] 0.55M AX. 0.4 1 M AXIM UM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage
|
OCR Scan
|
1SV147
55MAX.
1SV147
toshiba lable information
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2000 CATALOG SENSITRON SEMICONDUCTOR 3HD852002 12A-Peak Low Side Dual MOSFET Driver Bipolar/CMOS/DMOS Process :eatures: • High Peak Output Current - 12A • Wide Operating Range - 4.5V to 18V • Low Supply Current - 450|iA w/Logic 1 Input • Low Output Impedance - 1 .0Q, Typical
|
OCR Scan
|
3HD852002
|
PDF
|
BUZ102SL
Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
Text: BUZ102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level
|
OCR Scan
|
102SL
BUZ102SL_
P-TQ220-3-1
Q67040-S4010-A2
BUZ102SL
E3045A
P-TQ263-3-2
Q67040-S4010-A6
E3045
TO-92 44E
BUZ 1025
marking t54
SMD DIODE gg 45
diode smd marking BUZ
|
PDF
|
bup3140
Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
Text: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code
|
OCR Scan
|
O-218AB
Q67040-A4226-A2
l-30-1996
GPT05155
bup3140
BUP 3140
BUP 300
L30 diode 4 pin
|
PDF
|
TO218AB package
Abstract: GEA15 TO-218AB Package
Text: SIEMENS BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type BUP 602D VÒE 600V Pin 3 C E fc Package Ordering Code
|
OCR Scan
|
O-218AB
Q67040-A
Jul-31-1996
Jul-31
GPT05
TO218AB package
GEA15
TO-218AB Package
|
PDF
|
