NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
NX8570SD
409d
766d
ETALON
362d
TLD 521
315D
346D
377D
967D
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continuous wave light source for dwdm system
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Text: DATA SHEET LASER DIODE NX8563 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563
continuous wave light source for dwdm system
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8563LB
NX8563LF
10 gb laser diode
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362d
Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
315D
346D
377D
NX8570SA
b 803 a
NX8570SD
933D
618D
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TOSA DWDM
Abstract: TEC TOSA transistor NEC D 587 PX10160E NX8530NH dwdm tosa
Text: DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode module TOSA
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NX8530NH
NX8531NH
NX8531NH
NX8530NH)
NX8531NH)
TOSA DWDM
TEC TOSA
transistor NEC D 587
PX10160E
dwdm tosa
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NX8300BE-CC
Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8304CE-CC NX8503BG-CC NX8563LA NX8563LAS
Text: DATA SHEET LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Single Mode
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NX8563LA
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8304CE-CC
NX8503BG-CC
NX8563LAS
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Zener Diode SOD-323
Abstract: Transient Voltage Suppressor SOD323 low leakage tvs diode sod323 transient voltage suppressor diode IEC61000-4-4 12v zener sod 80 diode DIODE WITH SOD CASE CDA12T1G
Text: CDA12T1G Preliminary Transient Voltage Suppressor Diode Zener Diode for ESD Protection These zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers,
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CDA12T1G
8x20s)
IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
Zener Diode SOD-323
Transient Voltage Suppressor SOD323
low leakage tvs diode sod323
transient voltage suppressor diode
12v zener sod 80 diode
DIODE WITH SOD CASE
CDA12T1G
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BAS21AHT1G
Abstract: marking AA SOD-323
Text: BAS21AHT1G Low Leakage Switching Diode Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant LOW LEAKAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage
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BAS21AHT1G
BAS21AHT1/D
BAS21AHT1G
marking AA SOD-323
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BAS21HT1G
Abstract: BAS21HT1
Text: BAS21HT1 Preferred Device High Voltage Switching Diode Features • Pb−Free Packages are Available http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage
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BAS21HT1
BAS21HT1/D
BAS21HT1G
BAS21HT1
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NX8563
Abstract: NX8563-AZ NX8563LB NX8563LF laser diode 1550 nm 160832
Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
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NX8563
NX8563
14-PIN
NX8563-AZ
NX8563LB
NX8563LF
laser diode 1550 nm
160832
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10 gb laser diode
Abstract: NX8566LE NX8560MC Series bfy 421
Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator
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NX8564/8565/8566LE
NX8564LE-BC/CC)
10 gb laser diode
NX8566LE
NX8560MC Series
bfy 421
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diode 349A
Abstract: S1 DIODE schottky S11 SCHOTTKY diode MMBD110T1 MMDL101T1 mmbd110
Text: Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE • Very Low Capacitance — Less than 1.0 pF @ Zero Volts
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MMDL101T1
diode 349A
S1 DIODE schottky
S11 SCHOTTKY diode
MMBD110T1
MMDL101T1
mmbd110
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NSR1020MW2T1G
Abstract: NSR1020MW2T3G 5M MARKING CODE SCHOTTKY DIODE
Text: NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in
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NSR1020MW2T1G
OD-323
NSR1020MW2T1/D
NSR1020MW2T1G
NSR1020MW2T3G
5M MARKING CODE SCHOTTKY DIODE
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bfy 40
Abstract: STM 64 butterfly 7 pin GPO 80 Km upc 577 NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE stm 64 laser diode 19pin NX8566LE
Text: PRELIMINARY DATA SHEET LASER DIODE NX8560SJ Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560SJ Series is an Electro-Absorption EA modulator and wavelength monitor integrated, 1 550 nm Multiple Quantum Well (MQW)
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NX8560SJ
bfy 40
STM 64 butterfly 7 pin GPO 80 Km
upc 577
NX8560LJ
NX8560MC
NX8560MCS
NX8564LE
stm 64 laser diode 19pin
NX8566LE
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NSR1020MW2T1G
Abstract: NSR1020MW2T3G 5M MARKING CODE SCHOTTKY DIODE
Text: NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in
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NSR1020MW2T1G
OD-323
NSR1020MW2T1/D
NSR1020MW2T1G
NSR1020MW2T3G
5M MARKING CODE SCHOTTKY DIODE
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SHD124523
Abstract: SHD124523D SHD124523N SHD124523P
Text: SHD124523 SHD124523P SHD124523N SHD124523D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4774, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD124523
SHD124523P
SHD124523N
SHD124523D
SHD124523
SHD124523D
SHD124523N
SHD124523P
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Untitled
Abstract: No abstract text available
Text: SHD124545 SHD124545P SHD124545N SHD124545D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4776, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Applications: • Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD124545
SHD124545P
SHD124545N
SHD124545D
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Untitled
Abstract: No abstract text available
Text: SHD124544 SHD124544P SHD124544N SHD124544D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4775, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Applications: • Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD124544
SHD124544P
SHD124544N
SHD124544D
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SHD126168
Abstract: SHD126168D SHD126168N SHD126168P
Text: SHD126168 SHD126168D SHD126168N SHD126168P SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4779, REV. A Applications: SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 100C Operating Temperature Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD126168
SHD126168D
SHD126168N
SHD126168P
SHD126168
SHD126168D
SHD126168N
SHD126168P
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Untitled
Abstract: No abstract text available
Text: DB2S316 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB2S316 Product type: Schottky Barrier Diode Parameters *DEVICE=DB2S316,D * DB2S316 D model *$ .MODEL DB2S316 D + IS=477.23E-9 + N=1.0 + RS=1.6470 + IKF=1.9141 + CJO=8.4129E-12
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DB2S316
DB2S316
23E-9
4129E-12
90E-9
00E-6
40000E-9
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Untitled
Abstract: No abstract text available
Text: Rectifier Diode Chips Ultrafast Recovery CD5807, CD5809, CD5811 Features • Available as JANHCE and JANKCE per MIL-PRF-19500/477 • Electrically equivalent to 1N5807, 1N5809 and 1N5811 • Passivated junction • Compatible with all wire bonding and die attach techniques
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CD5807,
CD5809,
CD5811
MIL-PRF-19500/477
1N5807,
1N5809
1N5811
CD5807
CD5809
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Untitled
Abstract: No abstract text available
Text: DB3X316K Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB3X316K Product type: Schottky Barrier Diode Parameters *DEVICE=DB3X316K,D * DB3X316K D model *$ .MODEL DB3X316K D + IS=477.23E-9 + N=1.0 + RS=1.6470 + IKF=1.9141 + CJO=8.4129E-12
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DB3X316K
DB3X316K
23E-9
4129E-12
90E-9
00E-6
40000E-9
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD6100LT1/D SEMICONDUCTOR TECHNICAL DATA M o n o lithic Dual S w itching Diode MMBD6 1 0 0 LT1 3 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage vR Vdc Forward Current if mAdc iFM(surge) 70 200
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MMBD6100LT1/D
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: y -f> S U tipe Saper Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC20UR 200V 8A •trr35ns h* •SRKÜ • 3 7 U — Ttv-^JU •a«- oa . « « . fa •Æ fêSi RATINGS Absolute Maximum Ratings m w m Ratings Unit Tstg -4 0 -1 5 0 “C Tj 150 °C 200
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D8LC20UR
trr35ns
IGEI3444
D003445
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Untitled
Abstract: No abstract text available
Text: P - P * # - f * - K Super F ast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 Case : 1 .4 f 25 =1 600V 2.2A § 25 ±2 7 -°" i a+0 2 ^ 4.4 -o.i i * •S B Œ L L D î 0 CD H o (D •trr 5 0 n s If ) ^ Color code (Blue) sk^ epbhbbh Marking ffl m S3L
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S3L60
0033ti
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