JST SOT-23
Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805
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STEVAL-ISS001V1
BAS16
100PPM
JST SOT-23
smd transistor l6
smd transistor 2y
R135 VARISTOR
103 resistor pack
diode zener c55
2Y DIODE SMD
DIODE SMD J9
transistor c114
diode zener c72
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SMD TRANSISTOR L6
Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155
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STEVAL-ISS001V2
BAS16
100PPM
330UH
12X9MM
UBB-4R-D10T-1
SMD TRANSISTOR L6
transistor SMD Y1
y1 smd transistor
SMD TRANSISTOR Y1
1P smd transistor
y2 smd transistor
resistor smd 103
transistor smd R55
transistor smd j6
L6 smd transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MK Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K-MK
4N70K-MK
4N70KL-TF3-T
4N70KG-TF3-T
QW-r205-015
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-E Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-E
4N70-E
QW-R502-A72
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-S Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-S
4N70-S
O-252
QW-R205-023
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-R
4N70-R
O-220F1
QW-R502-A66
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70-C
4N70-C
4N70L-TFat
QW-R502-A89
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-MT Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K-MT
4N70K-MT
QW-R205-037
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K
4N70K
QW-R502-841
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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O-220F
O-220F1
QW-R502-340
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K
4N70K
QW-R502-841
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70K-TA Power MOSFET 4.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K-TA is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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4N70K-TA
4N70K-TA
4N70KL-TF3-T
4N70KG-Tat
QW-R205-040
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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QW-R502-340
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4N70
Abstract: utc 4n70l
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4 Amps, 700 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This
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O-220F
O-220F1
QW-R502-340
4N70
utc 4n70l
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4n70
Abstract: 4N70G-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged
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O-22entarily,
QW-R502-340
4n70
4N70G-TF3-T
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4N70
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4 Amps, 700 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This
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O-220F
O-220F1
QW-R502-340
4N70
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1k resistor
Abstract: resistor HDR1X2 STM32F103Cx 100nf capacitor 0805 size footprint 4N7 CAPACITOR resistor 0805 polarized capacitor 10k resistor
Text: STEVAL-ILL015V1 - Bill of Material Designator Comment Description Footprint C1 4u7 10u Polarized Capacitor (Tantal) 1812 C2 470nF Capacitor 0805 C3 100nF Capacitor 0805 C4 100uF (47uF) size D, 16V Polarized Capacitor (Radial) 7343_LH C5 4n7 Capacitor 0805
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STEVAL-ILL015V1
470nF
100nF
100uF
1k resistor
resistor
HDR1X2
STM32F103Cx
100nf capacitor
0805 size footprint
4N7 CAPACITOR
resistor 0805
polarized capacitor
10k resistor
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diac d83
Abstract: TELEVISION EHT TRANSFORMERS Power Semiconductor Applications Philips Semiconductors "Power Semiconductor Applications" Philips IC HEF 4538 TDA3654 equivalent at2090/01 D63 diac varistor 10E 431 automatic voltage stabilizer circuit diagram lm324
Text: Televisions and Monitors Power Semiconductor Applications Philips Semiconductors CHAPTER 4 Televisions and Monitors 4.1 Power Devices in TV Applications including selection guides 4.2 Deflection Circuit Examples 4.3 SMPS Circuit Examples 4.4 Monitor Deflection and SMPS Example
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86A-5163
Abstract: PWM controller for ZVS half-bridge optocoupler PC817 l6591 AHB ZVS PC817 optocoupler sharp optocoupler PC817 AHB transformer 1754.0004 Magnetica SMD optocoupler IC PC817 DIODE D28
Text: AN2852 Application note EVL6591-90WADP: 90 W AC-DC asymmetrical half-bridge adapter using L6591 and L6563 Introduction This document describes the characteristics and performance of a 90 W wide range input AC-DC adapter based on asymmetrical half-bridge topology AHB .
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AN2852
EVL6591-90WADP:
L6591
L6563
L6563
L6591,
EVL6591-90WAand
86A-5163
PWM controller for ZVS half-bridge
optocoupler PC817
AHB ZVS
PC817 optocoupler
sharp optocoupler PC817
AHB transformer 1754.0004 Magnetica
SMD optocoupler IC PC817
DIODE D28
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2N3819 spice model
Abstract: varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819
Text: Application Note 9 Issue 2 January 1996 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable
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50MHz)
OT-23
ZC740
FMMV2101
ZC741
FMMV2102
ZC742
FMMV2103
ZC743
2N3819 spice model
varactor APPLICATION
construction of varactor diode
1GHz vco
bfr90 equivalent
0-30v variable power supply
BBY40 spice
2N3819 Application Note
2N3819 equivalent
transistor 2N3819
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c548b
Abstract: transistor D304 2QS02G transistor C548B IC302 transformer smps 300R Quasi-resonant flyback transformer EVALQS-190W-ICE2QS02G ICE2pcs02 D304 TRANSISTOR
Text: Application Note, V1.1, 2 February 2009 Application Note EVALQS-190W-ICE2QS02G 190W Evaluation Board Based on Quasi-resonant Flyback Converter for LCD TV SMPS Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG
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EVALQS-190W-ICE2QS02G
ICE3BR4765J,
EVALPFC2-ICE2PCS02,
ICE2PCS02,
EVALQRS-ICE2QS02G-80W,
ICE2QS02G,
AN-CoolMOS-03,
ICE2QS01,
c548b
transistor D304
2QS02G
transistor C548B
IC302
transformer smps 300R
Quasi-resonant flyback transformer
EVALQS-190W-ICE2QS02G
ICE2pcs02
D304 TRANSISTOR
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us power supply atx 250w schematic
Abstract: VIPER27h AHB ZVS smd diode R616 l6591 flyback transformer specification zd601 smd diode R622 AHB transformer 1754.0004 Magnetica zd605
Text: AN3203 Application note EVL250W-ATX80PL: 250W ATX SMPS demonstration board Introduction This application note describes the characteristics and performance of a 250 W wide range input and power factor corrected power supply designed to be used in an ATX application.
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AN3203
EVL250W-ATX80PL:
L6563S
L6591
L6727
us power supply atx 250w schematic
VIPER27h
AHB ZVS
smd diode R616
flyback transformer specification
zd601
smd diode R622
AHB transformer 1754.0004 Magnetica
zd605
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VIPER27H
Abstract: smd diode R616 zd601 l6562 isolated flyback l6591 us power supply atx 250w schematic viper27 L6563H smd diode R622 AHB ZVS
Text: AN3203 Application note EVL250W-ATX80PL: 80 PLUS Silver 250W ATX SMPS demonstration board Introduction This application note describes the characteristics and performance of a 250 W wide range input and power factor corrected power supply designed to be used in an ATX application.
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AN3203
EVL250W-ATX80PL:
L6563S
L6591
VIPER27H
smd diode R616
zd601
l6562 isolated flyback
us power supply atx 250w schematic
viper27
L6563H
smd diode R622
AHB ZVS
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l3404
Abstract: L34024 Skan-a-matic P34024 visible photodetector L3402 photodetector T41300 T4101 L34035
Text: ^ H - v- O Î t SE N SO R f'/risCiWATED S V S r tf^ Ü ' I FASCO I I m / ~ INDUSTRIAL PRODUCTS |C 38 SEN I SY S 4DE D @ 3>4n73a OOGlB'ib Ö I SE N I .pqg. THRUBEAMS Subminiature LED Fair L34/P34 Series . • 'i i? Features: • R ated S eparation: 6 in. ■
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OCR Scan
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L34/F34
R42/T42
R43/T43,
L34024
P34024
L34035
P34035
L34040
P34040
l3404
Skan-a-matic
visible photodetector
L3402
photodetector
T41300
T4101
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