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    DIODE 504 Search Results

    DIODE 504 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 504 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT2x151DL60J

    Abstract: H100
    Text: APT2X151DL60J 600V 150A Ultrafast Soft Recovery Dual Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrafast Recovery Times trr • Low Losses • Free Wheeling Diode


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    PDF APT2X151DL60J APT2x151DL60J H100

    Untitled

    Abstract: No abstract text available
    Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers


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    PDF QFN28 QFN28-5x5 D-55294

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes y inar m i l pre iC-HT DUAL CW LASER DIODE DRIVER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ APPLICATIONS ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers


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    PDF QFN28 QFN28-5x5

    Untitled

    Abstract: No abstract text available
    Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode


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    PDF QFN28 QFN28-5x5 D-55294

    Untitled

    Abstract: No abstract text available
    Text: DSA30I150PA Schottky Diode Gen ² VRRM = 150 V I FAV = 30 A VF = 0.8 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA30I150PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf


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    PDF DSA30I150PA O-220 60747and 20131031c

    C-150

    Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
    Text: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB O-220AB AN-994. O-220 C-150 IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994.

    irf 1830

    Abstract: 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994. irf 1830 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns

    IRGS15B60KD

    Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
    Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB AN-994. O-220 IRGS15B60KD IRGSL15B60KD AN-994 C-150 IRGB15B60KD

    AN-994

    Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
    Text: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD O-220 O-220AB O-262 IRGB15B60KDPbF IRGS15B60KD AN-994. AN-994 C-150 IRGSL15B60KD

    AN-994

    Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD O-220AB O-220. AN-994. O-220 AN-994 C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L

    IRGB10B60KD

    Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB IRGB10B60KD C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L

    irf 1830

    Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994. irf 1830 diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94381C IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94381C IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 O-220AB

    C-150

    Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
    Text: PD - 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB O-220AB AN-994. O-220 C-150 IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: [ UTZ-SC0333_3 ] 2013/10/16 Ultra Violet Laser Diode   Features Outline Dimension • Optical Output Power: CW 70mW @Tc=25C • Peak Wavelength: 370~380nm • Can Type: 5.6 Floating Mounted with Photo Diode and Zener Diode Unit (mm)


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    PDF UTZ-SC0333 380nm NDU4116

    C-150

    Abstract: IRF1010 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRL3103L
    Text: PD - 94381D IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94381D IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: DSB10I45PM preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 10 A VF = 0.52 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSB10I45PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP ● Very low Vf


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    PDF DSB10I45PM O-220FP 60747and 20131030a

    Untitled

    Abstract: No abstract text available
    Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD O-220AB AN-994. O-220

    IRF530S

    Abstract: IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150
    Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994. IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


    OCR Scan
    PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC

    SE301A

    Abstract: 30mWI
    Text: N E C 30E D ELECTRONICS INC • h42752S 005=^44 fi ■ LIGHT EMITTING DIODE SE301A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header


    OCR Scan
    PDF h42752S SE301A SE301A 940nm, T-41-11 ta-259c) AM81ENT 30mWI