Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 5054 Search Results

    DIODE 5054 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 5054 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DSA50C150HB preliminary Schottky Diode Gen ² VRRM = 150 V I FAV = 2x VF = 25 A 0.74 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA50C150HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247


    Original
    PDF DSA50C150HB O-247 60747and 20131031a

    DSA30C150PB

    Abstract: No abstract text available
    Text: DSA30C150PB preliminary Schottky Diode Gen ² VRRM = 150 V I FAV = 2x VF = 15 A 0.75 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C150PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220


    Original
    PDF DSA30C150PB O-220 60747and 20131031a DSA30C150PB

    Untitled

    Abstract: No abstract text available
    Text: DSA 30 C 150 PB advanced V RRM = 150 V I FAV = 2x 15 A V F = 0.75 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses


    Original
    PDF O-220 60747and 20080929a

    DSA30C150PB

    Abstract: diode avalanche DSA 1-14 dsa30c150 30c150
    Text: DSA 30 C 150 PB advanced V RRM = 150 V I FAV = 2x 15 A V F = 0.75 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 30 C 150 PB Backside: cathode Features / Advantages: Applications: Package:


    Original
    PDF O-220 60747and 20080929a DSA30C150PB diode avalanche DSA 1-14 dsa30c150 30c150

    DPF60C300HB

    Abstract: DPG60C300HJ
    Text: DPG60C300HJ HiPerFRED² VRRM = 300 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300HJ Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips


    Original
    PDF DPG60C300HJ ISOPLUS247 60747and 20131125a DPF60C300HB DPG60C300HJ

    DPF60C300HB

    Abstract: DPG60C300HB DPG60C300HJ DPG60C300PC
    Text: DPG 60 C 300 HJ V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips


    Original
    PDF 60747and 20100125a DPF60C300HB DPG60C300HB DPG60C300HJ DPG60C300PC

    DPG60C300HB

    Abstract: IXYS TO-247 DATE CODE DPG60C300PC DPF60C300HB DPG60C300QB ISOPLUS247 calculation of diode snubber DPG80C300 DPG60C300HJ
    Text: DPG 60 C 300 HJ advanced V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package:


    Original
    PDF 60747and 20080929a ISOPLUS247 O-247 DPG60C300HB IXYS TO-247 DATE CODE DPG60C300PC DPF60C300HB DPG60C300QB ISOPLUS247 calculation of diode snubber DPG80C300 DPG60C300HJ

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original
    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    DPG60C300HJ

    Abstract: No abstract text available
    Text: DPG 60 C 300 HJ advanced V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package:


    Original
    PDF 60747and ISOPLUS247 O-247 DPG60C300HJ

    DPG60C300H

    Abstract: DPG60C300HB DPG60C300QB ISOPLUS247 TFR 600 DPF60C300HB DPG60C300PC
    Text: DPG 60 C 300 HJ V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips


    Original
    PDF 60747and 20100125a DPG60C300H DPG60C300HB DPG60C300QB ISOPLUS247 TFR 600 DPF60C300HB DPG60C300PC

    SKiip 83 EC 125 T1

    Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
    Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen


    Original
    PDF

    NTE74HC4067

    Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
    Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B


    Original
    PDF NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165

    Untitled

    Abstract: No abstract text available
    Text: BSB008NE2LX OptiMOSTM Power-MOSFET Product Summary Features • Optimized for e-fuse and OR-ing application • Ultra low Rdson in CanPAK-MX footprint • Low profile <0.7 mm • 100% avalanche tested VDS 25 V RDS(on),max 0.8 mW ID 180 A Qoss 74 nC Qg(0V.10V)


    Original
    PDF BSB008NE2LX

    1N914

    Abstract: FX105 FX105A FX105AD4 FX105AP3 FX105P IN914 capacitor c3a
    Text: FX105A Tone Detector D/105A/5 September 1999 1.0 Features Provisional Issue • Operates in High Noise Conditions • Adjustable Bandwidth • ≥ 36dB Signal Input Range • Adjustable Frequency • High Sensitivity • Wide Voltage Range 2.7V to 5.5V •


    Original
    PDF FX105A D/105A/5 FX105A 1N914 FX105 FX105AD4 FX105AP3 FX105P IN914 capacitor c3a

    Untitled

    Abstract: No abstract text available
    Text: 10-PY06NRA041FS-M413FY preliminary datasheet NPC Application flowNPC1 600V/41mΩ General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 10 V 0V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck MOSFET 10 V 0V 4Ω 4Ω Figure 2. Typical average static loss as a function of


    Original
    PDF 10-PY06NRA041FS-M413FY 00V/41mâ

    MIDCOM 671-8001

    Abstract: Midcom modem transformer 671-8001 430f149 midcom 82111 C0603X7R160-104KN P3100SARP LwPwr430 671-8001 LM72019 CMX868
    Text: SOFTWARE & HARDWARE DESCRIPTION • Complete CMX868-based V.22bis modem design • Ultra-low power • RS232 host interface • AT command set • Host µC • Two DAA / line interface variations • ‘North American’ • European / global • ‘Ready’ for CTR21 and FCC Part 68


    Original
    PDF CMX868-based 22bis RS232 CTR21 CMX868 CMX867 22bis/V RS-232 CMX868 22bis MIDCOM 671-8001 Midcom modem transformer 671-8001 430f149 midcom 82111 C0603X7R160-104KN P3100SARP LwPwr430 671-8001 LM72019

    midcom 82111

    Abstract: midcom,82107 zener diode U3 Marking diode zener c23 zener DIODE C25 diode zener c25 CMX868 Application note zener 18 zener diode marking R11 P3100SC
    Text: CML Microcircuits COMMUNICATION SEMICONDUCTORS Application Note CMX850 Communication Controller Reference Telephone Line interface AN/Telecom/850/3 August 2003 Introduction The CMX850 Communications Controller IC is connected to a telephone line with a special


    Original
    PDF CMX850 AN/Telecom/850/3 CMX850. midcom 82111 midcom,82107 zener diode U3 Marking diode zener c23 zener DIODE C25 diode zener c25 CMX868 Application note zener 18 zener diode marking R11 P3100SC

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan
    PDF

    c624 DIODE

    Abstract: diode c624 c627 DIODE MV10B MV50 MV5020 MV5021 MV5022 MV5023 MV5024
    Text: Discrete LED Lamps Monsanto offers a broad line of discrete light emitting diode products to provide the customer with a wide selection of off-the-shelf products that will meet his particular requirements. A broad selection of packages, lens effects, color power,


    OCR Scan
    PDF MV10B MIL-S-750. c624 DIODE diode c624 c627 DIODE MV50 MV5020 MV5021 MV5022 MV5023 MV5024

    step recovery diode

    Abstract: varactor tripler Frequency Tripler varactor
    Text: 0585443 ALPHA IN □3 D I D5A5443 ODOOSbM □ 1~ I D T " 0 7 -/V A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips AL PH A IND/ S E M I C O N D U C T O R Features • High Efficiency • High Power Handling Capability • High Reliability Description


    OCR Scan
    PDF D5A5443 step recovery diode varactor tripler Frequency Tripler varactor

    SRD diode

    Abstract: CVB1015A DVB6100A "Step Recovery Diode" varactor multiplier DVB6100 DVB6103B step recovery diodes
    Text: 0585443 □3 ALPHA D | 05Û5M43 □□□OSfeiQ 3 | ~ j 0 D Step Recovery Diodes, Multichip SRD a n C ] C h i p S a lp h a in » / s e m ic o n d u c to r Features • Low Transition Time • High Cutoff Frequency • High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi­


    OCR Scan
    PDF DVB6870A DVB6870B DVB6870C DVB6871A DVB6871B DVB6871C DVB6872A DVB6872B SRD diode CVB1015A DVB6100A "Step Recovery Diode" varactor multiplier DVB6100 DVB6103B step recovery diodes

    Untitled

    Abstract: No abstract text available
    Text: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi­


    OCR Scan
    PDF 05flS443 DVB6870-06 DVB6870-12 DVB6870-18 DVB6871 DVB6871-12 DVB6871-18 DVB6872-06 DVB6872-12

    DVB6723-04

    Abstract: dvb6101 HP STEP RECOVERY DIODES CVB1015-12 CVB1015-06 CVB1015-18 CVB1030-06 CVB1030-12 CVB1030-18 CVB1045-18
    Text: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi­


    OCR Scan
    PDF 05flS443 DVB6871 DVB6871-12 DVB6871-18 DVB6872-06 DVB6872-12 DVB6723-04 dvb6101 HP STEP RECOVERY DIODES CVB1015-12 CVB1015-06 CVB1015-18 CVB1030-06 CVB1030-12 CVB1030-18 CVB1045-18

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF


    OCR Scan
    PDF 554M5D0 000G503 N57/N58