Untitled
Abstract: No abstract text available
Text: DSA50C150HB preliminary Schottky Diode Gen ² VRRM = 150 V I FAV = 2x VF = 25 A 0.74 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA50C150HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247
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O-247
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DSA30C150PB
Abstract: No abstract text available
Text: DSA30C150PB preliminary Schottky Diode Gen ² VRRM = 150 V I FAV = 2x VF = 15 A 0.75 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C150PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220
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Untitled
Abstract: No abstract text available
Text: DSA 30 C 150 PB advanced V RRM = 150 V I FAV = 2x 15 A V F = 0.75 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses
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DSA30C150PB
Abstract: diode avalanche DSA 1-14 dsa30c150 30c150
Text: DSA 30 C 150 PB advanced V RRM = 150 V I FAV = 2x 15 A V F = 0.75 V Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 30 C 150 PB Backside: cathode Features / Advantages: Applications: Package:
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diode avalanche DSA 1-14
dsa30c150
30c150
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DPF60C300HB
Abstract: DPG60C300HJ
Text: DPG60C300HJ HiPerFRED² VRRM = 300 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300HJ Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips
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DPG60C300HJ
ISOPLUS247
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DPF60C300HB
Abstract: DPG60C300HB DPG60C300HJ DPG60C300PC
Text: DPG 60 C 300 HJ V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips
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DPF60C300HB
DPG60C300HB
DPG60C300HJ
DPG60C300PC
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DPG60C300HB
Abstract: IXYS TO-247 DATE CODE DPG60C300PC DPF60C300HB DPG60C300QB ISOPLUS247 calculation of diode snubber DPG80C300 DPG60C300HJ
Text: DPG 60 C 300 HJ advanced V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package:
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ISOPLUS247
O-247
DPG60C300HB
IXYS TO-247 DATE CODE
DPG60C300PC
DPF60C300HB
DPG60C300QB
ISOPLUS247
calculation of diode snubber
DPG80C300
DPG60C300HJ
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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DPG60C300HJ
Abstract: No abstract text available
Text: DPG 60 C 300 HJ advanced V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package:
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O-247
DPG60C300HJ
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DPG60C300H
Abstract: DPG60C300HB DPG60C300QB ISOPLUS247 TFR 600 DPF60C300HB DPG60C300PC
Text: DPG 60 C 300 HJ V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG60C300H
DPG60C300HB
DPG60C300QB
ISOPLUS247
TFR 600
DPF60C300HB
DPG60C300PC
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SKiip 83 EC 125 T1
Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen
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NTE74HC4067
Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B
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NTE40175B
NTE4017B
NTE40182B
NTE4018B
NTE4001B
NTE4019B
NTE4001BT
NTE40192B
NTE4002B
NTE40193B
NTE74HC4067
NTE4097B
NTE74HC299
NTE4017B
NTE4007
NTE4023B
NTE4027B
NTE74HC4053
NTE4553B
NTE74HC165
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Untitled
Abstract: No abstract text available
Text: BSB008NE2LX OptiMOSTM Power-MOSFET Product Summary Features • Optimized for e-fuse and OR-ing application • Ultra low Rdson in CanPAK-MX footprint • Low profile <0.7 mm • 100% avalanche tested VDS 25 V RDS(on),max 0.8 mW ID 180 A Qoss 74 nC Qg(0V.10V)
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BSB008NE2LX
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1N914
Abstract: FX105 FX105A FX105AD4 FX105AP3 FX105P IN914 capacitor c3a
Text: FX105A Tone Detector D/105A/5 September 1999 1.0 Features Provisional Issue • Operates in High Noise Conditions • Adjustable Bandwidth • ≥ 36dB Signal Input Range • Adjustable Frequency • High Sensitivity • Wide Voltage Range 2.7V to 5.5V •
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FX105A
D/105A/5
FX105A
1N914
FX105
FX105AD4
FX105AP3
FX105P
IN914
capacitor c3a
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Untitled
Abstract: No abstract text available
Text: 10-PY06NRA041FS-M413FY preliminary datasheet NPC Application flowNPC1 600V/41mΩ General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 10 V 0V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck MOSFET 10 V 0V 4Ω 4Ω Figure 2. Typical average static loss as a function of
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10-PY06NRA041FS-M413FY
00V/41mâ
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MIDCOM 671-8001
Abstract: Midcom modem transformer 671-8001 430f149 midcom 82111 C0603X7R160-104KN P3100SARP LwPwr430 671-8001 LM72019 CMX868
Text: SOFTWARE & HARDWARE DESCRIPTION • Complete CMX868-based V.22bis modem design • Ultra-low power • RS232 host interface • AT command set • Host µC • Two DAA / line interface variations • ‘North American’ • European / global • ‘Ready’ for CTR21 and FCC Part 68
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CMX868-based
22bis
RS232
CTR21
CMX868
CMX867
22bis/V
RS-232
CMX868
22bis
MIDCOM 671-8001
Midcom modem transformer 671-8001
430f149
midcom 82111
C0603X7R160-104KN
P3100SARP
LwPwr430
671-8001
LM72019
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midcom 82111
Abstract: midcom,82107 zener diode U3 Marking diode zener c23 zener DIODE C25 diode zener c25 CMX868 Application note zener 18 zener diode marking R11 P3100SC
Text: CML Microcircuits COMMUNICATION SEMICONDUCTORS Application Note CMX850 Communication Controller Reference Telephone Line interface AN/Telecom/850/3 August 2003 Introduction The CMX850 Communications Controller IC is connected to a telephone line with a special
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CMX850
AN/Telecom/850/3
CMX850.
midcom 82111
midcom,82107
zener diode U3 Marking
diode zener c23
zener DIODE C25
diode zener c25
CMX868 Application note
zener 18
zener diode marking R11
P3100SC
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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c624 DIODE
Abstract: diode c624 c627 DIODE MV10B MV50 MV5020 MV5021 MV5022 MV5023 MV5024
Text: Discrete LED Lamps Monsanto offers a broad line of discrete light emitting diode products to provide the customer with a wide selection of off-the-shelf products that will meet his particular requirements. A broad selection of packages, lens effects, color power,
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MV10B
MIL-S-750.
c624 DIODE
diode c624
c627 DIODE
MV50
MV5020
MV5021
MV5022
MV5023
MV5024
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step recovery diode
Abstract: varactor tripler Frequency Tripler varactor
Text: 0585443 ALPHA IN □3 D I D5A5443 ODOOSbM □ 1~ I D T " 0 7 -/V A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips AL PH A IND/ S E M I C O N D U C T O R Features • High Efficiency • High Power Handling Capability • High Reliability Description
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D5A5443
step recovery diode
varactor tripler
Frequency Tripler varactor
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SRD diode
Abstract: CVB1015A DVB6100A "Step Recovery Diode" varactor multiplier DVB6100 DVB6103B step recovery diodes
Text: 0585443 □3 ALPHA D | 05Û5M43 □□□OSfeiQ 3 | ~ j 0 D Step Recovery Diodes, Multichip SRD a n C ] C h i p S a lp h a in » / s e m ic o n d u c to r Features • Low Transition Time • High Cutoff Frequency • High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi
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DVB6870A
DVB6870B
DVB6870C
DVB6871A
DVB6871B
DVB6871C
DVB6872A
DVB6872B
SRD diode
CVB1015A
DVB6100A
"Step Recovery Diode"
varactor multiplier
DVB6100
DVB6103B
step recovery diodes
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Untitled
Abstract: No abstract text available
Text: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi
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05flS443
DVB6870-06
DVB6870-12
DVB6870-18
DVB6871
DVB6871-12
DVB6871-18
DVB6872-06
DVB6872-12
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DVB6723-04
Abstract: dvb6101 HP STEP RECOVERY DIODES CVB1015-12 CVB1015-06 CVB1015-18 CVB1030-06 CVB1030-12 CVB1030-18 CVB1045-18
Text: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi
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05flS443
DVB6871
DVB6871-12
DVB6871-18
DVB6872-06
DVB6872-12
DVB6723-04
dvb6101
HP STEP RECOVERY DIODES
CVB1015-12
CVB1015-06
CVB1015-18
CVB1030-06
CVB1030-12
CVB1030-18
CVB1045-18
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Untitled
Abstract: No abstract text available
Text: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF
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554M5D0
000G503
N57/N58
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