5100 b2

Contextual Info: SB 520.SB 5100 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Schottky barrier rectifiers diodes SB 520.SB 5100 7  8  1

ECONO2-6PACK IGBT module

Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
Contextual Info: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

Emcore solar cell

Abstract: ATJ photovoltaic cell solar cell "PHOTOVOLTAIC CELL" triple-junction "solar cell" diode cell EMCORE ATJ
Contextual Info: BTJM Photovoltaic Cell Triple-Junction with Monolothic Diode Solar Cell for Space Applications SPACE PHOTOVOLTAICS 28% Minimum Average Efficiency Features & Characteristics „ Highest efficiency flight cell with monolithic diode in the market „ Triple-Junction with Monolithic Diode BTJM InGaP/InGaAs/Ge Solar

RM1200DG

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DG-66S ● IF . 1200A ● VRRM . 3300V

RM200DG-130S

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM200DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM200DG-130S ● IF . 200A ● VRRM . 6500V

RM600DG-130S

Abstract: high voltage diode module high voltage diodes
Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM600DG-130S ● IF . 600A ● VRRM . 6500V

RM300DG-90S

Abstract: rm300DG
Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM300DG-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM300DG-90S ● IF . 300A ● VRRM . 4500V

RM400DG-66S

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM400DG-66S ● IF . 400A ● VRRM . 3300V

5SLD 1200J450350

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1436-00 10-2013 5SLG 0600P450300 HiPak DIODE Module VRRM = 4500 V IF = 2 x 600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

iec 61287

Abstract: 1200J450350 5SLD1200J450350
Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SLG 0600P450300

Contextual Info: Data Sheet, Doc. No. 5SYA 1436-01 01-2014 5SLG 0600P450300 HiPak DIODE Module VRRM = 4500 V IF = 2 x 600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

S 437 Diode

Contextual Info: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 ABB HiPakTM DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: O rdering num ber: EN 5100 No.5100 /I _ FP108 SA iYO, TR : PN P Epitaxial Planar Silicon T ransistor SBD : Schottky B arrier Diode DC/DC Converter Applications F e a tu re s •Composite type with a PN P transistor and a Schottky b arrier diode contained in one packge,

FP-108-1

Abstract: 2SB1121 FP108 1.5A COMMON CATHODE 2088a TA0316
Contextual Info: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

scr 300 amps

Abstract: T30P600S scr 250 amps 2000 Volt D77P4400 D52P1800S T52P800S 5000 volt scr D30P400S T30P700S D38P1000S
Contextual Info: DIODE CAPSULES & SCR CAPSULES Diode Capsules CKE Number D30P400S D30P1200S D38P750S D38P1000S D38P1000S1 D38P1000S3 D38P1200S D38P1500S D52P1800S D52P2400S D77P2900S D77P3900S D77P4400S Vrrm volts 500-1500 500-1500 1500-3000 1000-2000 1500-2600 3500-4500

MARKING 108

Abstract: FP-108-1 2SB1121 FP108 TA0316
Contextual Info: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

DPG30IM300PC

Contextual Info: DPG30IM300PC HiPerFRED² = High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number Backside: cathode 1 3 Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour

100C1295

Abstract: DSW480
Contextual Info: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 270 DAICO INDUSTRIES

DSWM5

Contextual Info: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 320 DAICO INDUSTRIES

Contextual Info: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions

diode 15b

Abstract: scr 500a CD62 CD621615B 15B diode Diode 1600V To 220 powerex cd62 powerex cd67
Contextual Info: CD62_15B CD67_15B POW-R-BLOKTM Dual SCR/Diode Isolated Module 150 Amperes / Up to 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex SCR/Diode Modules are designed for use in applications

IGBT welder circuit

Abstract: scr drive circuit diagram scr driving circuit for dc motor CD62 CD621615A powerex pow-r-blok powerex cd62 powerex cd67
Contextual Info: CD62_15A CD67_15A TM POW-R-BLOK Dual SCR/Diode Isolated Module 150 Amperes / Up to 1600 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex SCR/Diode Modules are designed for use in applications