DIODE 54 75 Search Results

DIODE RF DETECTOR

Abstract: "RF Power" MA40053 RF Power detector video amplifier MA40053-54 noise diode rf detector diode low power
Contextual Info: MA40053-54 SILICO SCHOTTKY DETECTOR DIODE PACKAGE STYLE 54 DESCRIPTION: The ASI MA40053-54 is a Silicon Schottky Detector Diode designed for use in Stripline, coaxial detectors and waveguides. FEATURES: • • High Sensitivity. Low Noise Figure. MAXIMUM RATINGS

australia heat sink

Abstract: ARR03P1900
Contextual Info: Industrial Microphotonics Company 1900W QCW Laser Diode Array Part Number: ARR03P1900 Y PACKAGE • Packaged 54 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER

australia heat sink

Abstract: ARR03P2400
Contextual Info: Industrial Microphotonics Company 2400W QCW Laser Diode Array Part Number: ARR03P2400 Y PACKAGE • Packaged 54 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER

ARR03P1900

Contextual Info: 1900W QCW Laser Diode Array Part Number: ARR03P1900 Y PACKAGE • Packaged 54 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN QCW Peak Power Output

Contextual Info: MA4883 MEDIUM BARRIER SCHOTTKY DIODE DESCRIPTION: PACKAGE STYLE 54 The ASI MA4883 is a Silicon Schottky Mixer Diode designed for use in Stripline and coaxial mixers and upconverters. FEATURES: • • High Reliability. Low Noise Figure. MAXIMUM RATINGS I 2.0 mA

hsch 3486 zero bias schottky diode

Abstract: HSCH-3486 MA4E928B ma4e928B-54 "zero-bias schottky diode" HSCH3486 20 GHz PIN diode zero bias schottky diode detector
Contextual Info: HSCH-3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The HSCH-3486 is a Silicon Zero Bias Schottky Barrier Diode Designed for High Sensitivity Detector and Low Starved Mixer Applications up to 10 GHz. FEATURES INCXLUDE: • Replacement for HSCH3486 and MA4E928B-54

ma4853

Abstract: MA4853M
Contextual Info: MA4853M MEDIUM BARRIER SCHOTTKY MATCHED PAIR DIODE PACKAGE STYLE 54 DESCRIPTION: The ASI MA4853M is a Silicon Schottky Mixer Matched pair Diode. Designed for use in Stripline and coaxial mixers and upconverters. FEATURES: • • High Reliability. Low Noise Figure.

Diode BAY 93

Contextual Info: BAY 93 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Sehr Schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions In mm »’»• KATHODE 01,9 CATHODE 0 0 ,5 8 Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35

BYW52 200

Contextual Info: BYW52 / 53 / 54 / 55 / 56 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading

BYW52

Abstract: BYW52 200
Contextual Info: BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading

BYW52

Abstract: BYW53 BYW54 BYW55 BYW56 BYW52 200
Contextual Info: BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading

BYW56 v

Abstract: BYW52 BYW53 BYW54 BYW55 BYW56 BYW52 200
Contextual Info: BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading

Contextual Info: MA45340-54 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.33pì C1/C2 Min. Capacitance Ratio4.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.750 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleAxial

Contextual Info: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C

19T8

Abstract: 19t8 tube 6T8-5T8-19T8 6T8 tube ET-T893 180J rs tube general electric
Contextual Info: |ftjb 6T8 5T8 19T8 6 T 8 -5 T 8 -1 9 T 8 ET-T893 TRIPLE-DIODE TRIODE Page 1 8-54 TUBES DESCRIPTION AND RATING1 The 6T8 is a m iniature triple-diode, high-mu triode intended primarily for use as a combined AM detector, F M detector, and audio-frequency voltage

C4D10120

Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching

Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching

C4D10120

Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching

Contextual Info: C4D40120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; = 54 A TC<135˚C Qc Features • • • • • 260 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

C4D10120

Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 13 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching

Contextual Info: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for

BYY53

Abstract: BYY53-75 BYY54 hermetic press-fit diode
Contextual Info: BYY53 / BYY54 25A Silicon Power Rectifier Diode Part no. Description The BYY53/54 are hermetically sealed 25Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for

BYP54-800

Abstract: BYP53-800 BYP53 BYP53-75 BYP54 hermetic press-fit diode zetex MARKING CODE
Contextual Info: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for

marking code zetex

Abstract: hermetic press-fit diode BYY53 BYY53-75 BYY54 zetex MARKING CODE
Contextual Info: BYY53 / BYY54 25A Silicon Power Rectifier Diode Part no. Description The BYY53/54 are hermetically sealed 25Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for