Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 600V 20A Search Results

    DIODE 600V 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 600V 20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    W20NM60

    Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
    Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60FD STP20NM60FD STW20NM60FD O-220 O-220FP O-247 O-247 W20NM60 w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST

    RG 2006 10A 600V

    Abstract: No abstract text available
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP RG 2006 10A 600V

    w20nm60

    Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP w20nm60 w20nm60fd P20NM60FD F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST

    transistor k 4212

    Abstract: APT40DQ60S datasheets transistor k 4212 k 4212 APT40DQ60B APT40GT60BR
    Text: 1 2 TO -2 4 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT40DQ60B APT40DQ60S 600V 600V 40A 40A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times


    Original     		PDF APT40DQ60B APT40DQ60S O-247 transistor k 4212 APT40DQ60S datasheets transistor k 4212 k 4212 APT40DQ60B APT40GT60BR

    Untitled

    Abstract: No abstract text available
    Text: 1 2 TO -2 4 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT40DQ60B APT40DQ60S 600V 600V 40A 40A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times


    Original     		PDF APT40DQ60B APT40DQ60S O-247 UPS057)

    G20N60B3D

    Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
    Text: HGTG20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D LD26 RHRP3060 G20N60B3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0300 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0100 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: SML20SIC06C MECHANICAL DATA SILICON CARBIDE SCHOTTKY DIODE 600V 20A Dimensions in mm inches 6.32 (0.249) 6.60 (0.260) 13.59 (0.535) 13.84 (0.545) 1.02 (0.040) 1.27 (0.050) VR (max) 600V VF (typ) 1.5V IF (max) 20A 20.07 (0.790) 20.32 (0.800) 30.35 (1.195)


    Original     		PDF SML20SIC06C reliab10A

    Diode 600v 20a

    Abstract: 8037 20A jantx diodes
    Text: SML20SIC06C MECHANICAL DATA SILICON CARBIDE SCHOTTKY DIODE 600V 20A Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) VR (max) 600V VF (typ) 1.5V IF (max) 20A 20.07 (0.790) 20.32 (0.800) 30.35 (1.195)


    Original     		PDF SML20SIC06C Diode 600v 20a 8037 20A jantx diodes

    1000V 20A transistor

    Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
    Text: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30


    Original     		PDF CS340602 CS341202 RM25HG-24S CS241250 CS240650 CS240610 CS241210 QRS0620T30 CS241020 QRS1220T30 1000V 20A transistor fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery

    silicon carbide diode

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		PDF RJS6004WDPQ-E0 R07DS0898EJ0100 PRSS0003ZE-A O-247) silicon carbide diode

    PRSS0003ZE-A

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


    Original     		PDF RJS6004WDPQ-E0 R07DS0898EJ0101 PRSS0003ZE-A O-247) PRSS0003ZE-A

    SIDC09D60E6

    Abstract: No abstract text available
    Text: SIDC09D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC09D60E6 600V IF 20A A This chip is used for:


    Original     		PDF SIDC09D60E6 Q67050-A4006A001 4303M, SIDC09D60E6

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC09D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC09D60E6 600V IF 20A A This chip is used for:


    Original     		PDF SIDC09D60E6 Q67050-A4006A001 4303M,

    SIDC09D60E6

    Abstract: No abstract text available
    Text: Preliminary SIDC09D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC09D60E6 600V IF 20A A This chip is used for:


    Original     		PDF SIDC09D60E6 Q67050-A4006A001 4303M, SIDC09D60E6

    SIDC09D60E

    Abstract: No abstract text available
    Text: Preliminary SIDC09D60E Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC09D60E 600V ICn 20A A This chip is used for:


    Original     		PDF SIDC09D60E Q67050-A4006A001 4303E, SIDC09D60E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC09D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC09D60E6 VR 600V IF 20A A This chip is used for:


    Original     		PDF SIDC09D60E6 Q67050-A4006sawn 4303M,

    Untitled

    Abstract: No abstract text available
    Text: SIDC06D60AC6 Fast switching diode chip in EMCON 3 -Technology FEATURES: • 600V EMCON 3 technology 70 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60AC6 600V IF 20A A This chip is used for:


    Original     		PDF SIDC06D60AC6 Q67050-A4357A101 L4981M,

    Untitled

    Abstract: No abstract text available
    Text: 600V 2x40A APT40DQ60BCT APT40DQ60BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters


    Original     		PDF 2x40A APT40DQ60BCT APT40DQ60BCTG* O-247

    Untitled

    Abstract: No abstract text available
    Text: SIDC06D60C6 Fast switching diode chip in EMCON 3 -Technology FEATURES: • 600V EMCON 3 technology 70 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60C6 600V IF 20A A This chip is used for:


    Original     		PDF SIDC06D60C6 Q67050-A4285A101 L4541M,

    SIDC06D60C6

    Abstract: No abstract text available
    Text: SIDC06D60C6 Fast switching diode chip in EMCON 3 -Technology FEATURES: • 600V EMCON 3 technology 70 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60C6 600V IF 20A A This chip is used for:


    Original     		PDF SIDC06D60C6 Q67050-A4285A101 L4541M, SIDC06D60C6

    SIDC06D60AC6

    Abstract: No abstract text available
    Text: SIDC06D60AC6 Fast switching diode chip in EMCON 3 -Technology FEATURES: • 600V EMCON 3 technology 70 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60AC6 600V IF 20A A This chip is used for:


    Original     		PDF SIDC06D60AC6 Q67050-A4357A101 L4981M, SIDC06D60AC6