DIODE 6019 Search Results

Contextual Info: Advanced Power Electronics Corp. APE6019 SYNCHRONOUS RECTIFIER DRIVER FEATURES DESCRIPTION Offers Efficiency Improvement Over Schottky Diode Depends on Drive Configuration of the SR . Drives all Power MOSFET. Prediction Gate Timing Control. Minimum MOSFET Body Diode Conduction.

MOTOROLA-MBR745

Abstract: LT1270 LT1070 equivalent capacitor wima mks 04 nichicon electrolytic capacitor 2200MF MARCON AMERICA CORP LT1070IC snubber overshoot composite Marcon capacitor Co Sanyo 9980 lu
Contextual Info: LintiAß Application Note 46 TECHNOLOGY November 1991 Efficiency and Power Characteristics of Switching Regulator Circuits Brian Huffman Efficiency is often the main objective when using switch­ ing regulators. High efficiency means less power drain on the input source batteries, etc. and less heat buildup

MDS9753E

Abstract: Power MOSFET SO-8 Complementary N-P channel N-P Channel mosfet
Contextual Info: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability.

MDS9651

Abstract: MDS9651URH trench mosfet N-P Channel mosfet 40V Complementary MOSFET
Contextual Info: Complementary N-P Channel Trench MOSFET General Description Features N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS ON <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V The MDS9651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent

MAGNACHIP

Abstract: MDP9N50 mosfet 500v 6903 n-channel 250V power mosfet N-Channel mosfet 400v to220
Contextual Info: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description Features The MDP9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDF5N50

Abstract: mosfet 500V 50A MDF5N mosfet MDF5N50 500V 50A mosfet 500v MagnaChip Semiconductor 250fA 6903 N-channel 500V mosfet "Power Diode" 500V 50A
Contextual Info: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description Features The MDF5N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDP5N50

Abstract: mosfet 500V 50A mosfet 500v TW18
Contextual Info: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description Features The MDP5N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDS9651

Abstract: Power MOSFET SO-8 Complementary N-P channel MDS965 PF3506 601ID 1S1020 82269
Contextual Info: Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability N-Channel • VDS = 30V ■ ID=7.2A ■ RDS ON

MDF12N50

Abstract: 500V MOSFET Power Supply 10T1 mdf12n n-Channel mosfet 400v uc pfc MagnaChip Semiconductor high power diode 500v
Contextual Info: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description Features The MDF12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MOSFET 500V

Abstract: MDP12N50 133WW n-Channel mosfet 500v
Contextual Info: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description Features The MDP12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

MDS1651

Contextual Info: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. MDS1651 is suitable device for PWM, Load

MDS1651

Contextual Info: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V

MDC0531E

Abstract: MDC05
Contextual Info: Dual N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. Low Rds on and low gate charge operation with gate voltage as

MDC0531E

Abstract: common-drain MDC05 MDC0531ER trench mosfet pd8a
Contextual Info: Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low RDS ON and low gate charge operation with gate voltage

0342F

Abstract: 82269 MagnaChip Semiconductor
Contextual Info: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state

mdd1655

Contextual Info: Single N-channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load

MDD1654

Abstract: MDD*1654 mdd1654 MOSFET MagnaChip Semiconductor Ltd. MDD1654 MDD1654RH MDD165 30V 20A power p MOSFET TO 252 dimensions
Contextual Info: Single N-channel Trench MOSFET 30V, 55A, 6.0mΩ General Description Features The MDD1654 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load

MDD1653

Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Contextual Info: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state

MDE1752

Abstract: MDE1752RH
Contextual Info: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability

MDD1752

Abstract: MDD1752RH MDD*1752 40V 14A DPAK n-channel mosfet vgs 3v MAGNACHIP Z 8.0m 40V50A trench mosfet 40V, 50A n mosfet
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability

MDI1752

Abstract: 40V50A 40V, 50A n mosfet 82269
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MDF1752

Abstract: 220F
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

MDS3651

Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
Contextual Info: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

MagnaChip Semiconductor

Abstract: 0342F
Contextual Info: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 20V, 7.3A, 23mΩ Ω General Description Features The MDH1331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance