C26B
Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
Text: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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Original
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FF900R12IE4
326A11
78F6F8
36F1322
A2CB36
CC236D
1231423567896AB
4112CD3567896EF
C26B
GDS C25/0
diode e61
GDS C25/1231423567896AB
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PDF
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5a1 DIODE
Abstract: 8A2 DIODE QS316209 QS3162209
Text: QS316209, QS3162209 QuickSwitch Products High-Speed CMOS 18-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316209 QS3162209 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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Original
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QS316209,
QS3162209
18-Bit
QS316209
48-pin
QS316209
QS3162209.
5a1 DIODE
8A2 DIODE
QS3162209
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PDF
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10B1
Abstract: 10B2 12B1 12B2 16B1 16B2 QS3165233 DIODE 15B2
Text: QS3165233 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 50Ω Damping Resistor QS3165233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs
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Original
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QS3165233
56-pin
QS3165233
32-bit
16-bit
QS316233
QS3162233
MDSL-00245-01
10B1
10B2
12B1
12B2
16B1
16B2
DIODE 15B2
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PDF
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1Bn-12Bn
Abstract: diagram of diode 1a2 10A1 10A2 11A1 11A2 12A1 QS316212
Text: QS316212, QS3162212 QuickSwitch Products High-Speed CMOS 24-Bit Bus-Exchange Switch Q QUALITY SEMICONDUCTOR, INC. QS316212 QS3162212 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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Original
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QS316212,
QS3162212
24-Bit
QS316212
56-pin
QS3162212
QS316212
1Bn-12Bn
diagram of diode 1a2
10A1
10A2
11A1
11A2
12A1
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PDF
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16212
24-BIT
3VH16212
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PDF
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DIODE 10B3
Abstract: 12b3 diode 11b3 DIODE 10B3 11B3 diode 6b3 10B1 QS316214 QS3162214 1A12A
Text: QS316214, QS3162214 ADVANCE INFORMATION QuickSwitch Products High-Speed CMOS 12-Bit 3-to-1 Bus-Select Switch Q QUALITY SEMICONDUCTOR, INC. QS316214 QS3162214 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC
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Original
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QS316214,
QS3162214
12-Bit
QS316214
QS3162214
56-pin
QS316214
DIODE 10B3
12b3 diode
11b3 DIODE
10B3
11B3
diode 6b3
10B1
1A12A
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PDF
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16212
24-BIT
3VH16212
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PDF
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.xa2
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16212
24-BIT
3VH16212
.xa2
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PDF
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16233 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16233 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16233
IDTQS3VH16233
3VH16233
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PDF
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10A1
Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16212
24-BIT
3VH16212
10A1
10A2
11A1
11A2
12A1
12A2
IDTQS3VH16212
QS3VH16212
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PDF
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10A1
Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16212
24-BIT
3VH16212
10A1
10A2
11A1
11A2
12A1
12A2
IDTQS3VH16212
QS3VH16212
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PDF
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10B1
Abstract: 10B2 12B1 12B2 QS3162233 QS316233
Text: QS316233, QS3162233 QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux Q QUALITY SEMICONDUCTOR, INC. QS316233 QS3162233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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Original
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QS316233,
QS3162233
QS316233
56-pin
QS3162233
QS316233
QS3162233,
32-bit
16-bit
10B1
10B2
12B1
12B2
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PDF
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16212
24-BIT
3VH16212
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PDF
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10A1
Abstract: 10A2 10B1 11A1 11A2 12A1 12A2 SN74CBTS16213
Text: SN74CBTS16213 24-BIT FET BUS-EXCHANGE SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS051B – MARCH 1998 – REVISED NOVEMBER 1998 DGG OR DL PACKAGE TOP VIEW 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels Package Options Include Plastic Thin
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Original
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SN74CBTS16213
24-BIT
SCDS051B
300-mil
SN74CBTS16213
10A1
10A2
10B1
11A1
11A2
12A1
12A2
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: IDTQS3VH16233 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH16233 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16233
3VH16233
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PDF
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SO56-2
Abstract: 11A2 11B2 Diode 9b2 diode diode 1a2 10A1 10A2 11A1 12A1 12A2
Text: IDTQS316212 HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 24-BIT BUS-EXCHANGE SWITCH DESCRIPTION: FEATURES: − − − − − Enhanced N channel FET with no inherent diode to Vcc Low propagation delay
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Original
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IDTQS316212
24-BIT
56-pin
QS316212
12-bit
O56-1)
SO56-2
11A2
11B2 Diode
9b2 diode
diode 1a2
10A1
10A2
11A1
12A1
12A2
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PDF
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.xa2
Abstract: No abstract text available
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16212 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16212
24-BIT
3VH16212
.xa2
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PDF
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10A1
Abstract: 10A2 11A1 11A2 12A1 12A2 IDTQS3VH16212 QS3VH16212
Text: IDTQS3VH16212 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH IDTQS3VH16212 PRELIMINARY FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc
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Original
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IDTQS3VH16212
24-BIT
3VH16212
10A1
10A2
11A1
11A2
12A1
12A2
IDTQS3VH16212
QS3VH16212
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PDF
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10A1
Abstract: 10B1 11A1 12A1 QS316292 diode 10b1 11B2 Diode
Text: QS316292, QS3162292 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 12-Bit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side QS316292 QS3162292 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC
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Original
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QS316292,
QS3162292
12-Bit
QS316292
56-pin
QS316292
QS3162292
10A1
10B1
11A1
12A1
diode 10b1
11B2 Diode
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PDF
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DK 04
Abstract: ET-T1646 T1646 6B10 general electric
Text: 6B10 6B10 ET-T1646 Page 1 11-60 DUPLEX-DIODE TWIN TRIODE TUBES FOR TV HORIZONTAL PHASE-DETECTOR AND HORIZONTAL OSCILLATOR APPLICATIONS DESCRIPTION AND RATING The 6B10 is a COMPACTRON device containing two diodes and two triodes. The triode sections have separate cathodes and the diode sections
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OCR Scan
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ET-T1646
DK 04
ET-T1646
T1646
6B10
general electric
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PDF
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6B10
Abstract: horizontal section of tv E12-70 ET-T1646
Text: 6B10 ELECTRONICS 6B10 COMPACTRON DUPLEX-DIODE TWIN TRIODE P age 1 4-64 FOR TV HORIZONTAL PHASE-DETECTOR A N D HORIZONTAL OSCILLATOR APPLICATIONS DESCRIPTION AND RATING = The 6B10 is a compactron containing two diodes and two triodes. The triode sections have separate cathodes and the diode sections have a common cathode. The diodes are
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OCR Scan
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K-556II-T0245-5
6B10
horizontal section of tv
E12-70
ET-T1646
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PDF
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l30 diode smd
Abstract: No abstract text available
Text: SI EM ENS LG/LR/LY Z181 2 to 6 DIODE ARRAYS LG Z182-186 8,10 DIODE ARRAYS LG Z188,180 2 to 10 DIODE ARRAYS LR Z182— 189/180 s in g l e 2 mm LED Lamp Dimensions in inches mm .0 94 ( 2 .4 ) FEATURES • Emission color - LR : Red - LG : Green -L Y : Yellow
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OCR Scan
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Z182-186
18-pln
fl535t
l30 diode smd
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PDF
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3A/itas 3-415
Abstract: No abstract text available
Text: SIEMENS IRM3401/3402/3405/3415 Infrared Data Transceiver Preliminary IRM340S IRM3401 FEATURES • Meets All Applicable IrDA Specifications • IrDA Data Rates Up to 4.0 Mb/s • Wide Dynamic Range • Differential PIN Diode Input for Superior Interference Rejection
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OCR Scan
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IRM3401/3402/3405/3415
IRM340S
IRM3401
18-pln
fl535t
3A/itas 3-415
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PDF
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products Semiconductor, I nc . High-Speed CMOS 12-ßit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5Q. bidirectional switches connect inputs
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OCR Scan
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56-pin
QS316292
QS3162292
12-Bit2
500i2
minimi12
74bbfl03
0DD3757
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PDF
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