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    DIODE 6J Search Results

    DIODE 6J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 6J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAS3007A. Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A per diode


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    PDF BAS3007A. BAS3007A-RPP OT143

    Untitled

    Abstract: No abstract text available
    Text: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for


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    PDF UC1610 UC3610 SLUS339B

    nc65

    Abstract: fp25r12w2t fp25r12w2t4_b11 P2NC6
    Text: Technische Information / technical information FP25R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode


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    PDF FP25R12W2T4 nc65 fp25r12w2t fp25r12w2t4_b11 P2NC6

    FP35R12W2T4

    Abstract: MC65 FP35R12W2T4_B11 fP35R12W2T4-b11
    Text: Technische Information / technical information FP35R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode


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    PDF FP35R12W2T4 MC65 FP35R12W2T4_B11 fP35R12W2T4-b11

    6J66

    Abstract: FP25R12W2T4 mpf271 application ntc-thermistor
    Text: Technische Information / technical information FP25R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode


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    PDF FP25R12W2T4 6J66 mpf271 application ntc-thermistor

    FS150R12KT4_B11

    Abstract: FS150R12KT4
    Text: Technische Information / technical information FS150R12KT4_B11 IGBT-Module IGBT-modules EconoPACK 3 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPACK™3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FS150R12KT4 FS150R12KT4_B11

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FF200R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und EmCon4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FF200R12MT4

    FF150R12ME3G

    Abstract: No abstract text available
    Text: Technische Information / technical information FF150R12ME3G IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FF150R12ME3G FF150R12ME3G

    BD3 diode

    Abstract: 6n06e k4366
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    PDF IFS100B12N3T4 CEE32 1322D14 CEE326 732CF5CD 2313ECEC 1231423567896AB2CDEF1B6 54E36F 4112F BD3 diode 6n06e k4366

    IFS100B12N3E4

    Abstract: C5363 IFS100B12N3E4B
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current


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    PDF IFS100B12N3E4 428654F4 BCFC24 E32DC BCFC26 E32DC6 6734F 9C46E4 BC33694 1231423567896AB C5363 IFS100B12N3E4B

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FF450R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FF450R12KE4

    ifs75b12n3e4_b32

    Abstract: No abstract text available
    Text: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense


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    PDF IFS75B12N3E4 ifs75b12n3e4_b32

    CZ5384B

    Abstract: CZ5334B CZ5379B CZ5371B CZ5354B CZ5372B CZ5336B CZ5363B CZ5361B CZ5386B
    Text: Central CZ5333B THRU CZ5388B TM Semiconductor Corp. 5.0W SILICON ZENER DIODE 3.3 VOLTS THRU 200 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CZ5333B Series Silicon Zener Diode is a high quality voltage regulator designed for use in industrial,


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    PDF CZ5333B CZ5388B DO-201 CZ5334B CZ5335B CZ5336B CZ5337B CZ5338B CZ5384B CZ5379B CZ5371B CZ5354B CZ5372B CZ5363B CZ5361B CZ5386B

    LTC4098-3.6

    Abstract: A20-LCD15.6 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


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    PDF IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter


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    PDF FS200R06KE3 CEE32 1322D14 CEE326 632CF5CD 1CE73 2313ECEC 3265CDDC14ECF 1231423567896AB2CDEF1B6 54E36F

    Untitled

    Abstract: No abstract text available
    Text: What is a Current Lim iting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu­ lating Diode” or a "Constant Current Diode," performs quite a unique function. Sim ilar to a zener diode, which


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    PDF 90-second

    1n5gt

    Abstract: diode aa 90 1A7GT 6J5G 6j5gt 1A5GT 6p5g 6f5G 6j5gx IN50
    Text: TUB! 1A5GT 1A7GT 1C5GT 1D8GT ESSAYÉ SUR POSTE 8 -A A P entode H eptode P entode Diode Triode P entode 1H5GT Double D iode-Triode Pentode 1N5GT T étrode 1Q5GT H eptode “ 6A8GT“ Triode ~6F5GT“ 6H6G tT Double Diode Triode 6J5GT Am­ poule C hauffage F ilam en t


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    PDF

    6ju8

    Abstract: 6ju8a general electric
    Text: E L EC T R O N IC — PRODUCT INFORMATION — IN A C TIO N - Page 1 6JU8-A Quadruple Diode TUBES The 6JU8-A is a general-purpose quadruple diode of the 9-pin miniature type designed for use in phase-detector and noise-immune color-killer circuits of color television


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    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times


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    PDF BAV199LT1/D BAV199LT1 BAV199LT3 inch/10 BAV199LT1 OT-23 O-236AB) 2PHX33713F-0

    SD615

    Abstract: sd6150 D1625
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode M SD6150 MAXIM UM RATINGS EACH DIODE Rating Symbol Reverse Voltage Peak Forward Recurrent Current Peak Forward Surge Current (Pulse Width = 10 usee) Total Device Dissipation @ Derate above 25°C


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    PDF SD6150 SD615 sd6150 D1625

    SMD310

    Abstract: Motorola 417 MMSD914T1 MMSD914T3 SOD123 footprint FAST SWITCHING DIODE SOD123 5D 9718-4 AAZ marking DIODE aaz
    Text: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA MMSD914T1 Motorola Preferred Device Switching Diode This switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time


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    PDF MMSD914T1/D OD-123 MMSD914T1 MMSD914T3 inch/10 MMSD914T1 OD-123 2PHX34003F-0 SMD310 Motorola 417 SOD123 footprint FAST SWITCHING DIODE SOD123 5D 9718-4 AAZ marking DIODE aaz

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 This switching diode has the following features: M otorola Preferred D evice • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel


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    PDF BAV170LT1 BAV170LT3 inch/10 BAV170LT1 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode MMSD914T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time Motorola Preferred Device


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    PDF MMSD914T1/D MMSD914T1 OD-123 OD-123

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE ►I ANODE 3 O1 — O2 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage


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    PDF BAW56LT1/D BAW56LT1 -236A