C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383C
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
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Untitled
Abstract: No abstract text available
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
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irf 1830
Abstract: 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns
Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
AN-994.
irf 1830
10A IGBT driver IC
IRGB10B60KD
C-150
IRGS10B60KD
IRGSL10B60KD
IRL3103L
TRANSISTOR marking ar code
irf 44 ns
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IRGS15B60KD
Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
IRGS15B60KD
IRGSL15B60KD
AN-994
C-150
IRGB15B60KD
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AN-994
Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
Text: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB15B60KDPbF
IRGS15B60KD
IRGSL15B60KD
O-220
O-220AB
O-262
IRGB15B60KDPbF
IRGS15B60KD
AN-994.
AN-994
C-150
IRGSL15B60KD
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AN-994
Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB10B60KDPbF
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-220.
AN-994.
O-220
AN-994
C-150
IRF530S
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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IRGB10B60KD
Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382C
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
O-220AB
IRGB10B60KD
C-150
IRF1010
IRF530S
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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irf 1830
Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
AN-994.
irf 1830
diode 10a 400v
C-150
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
IRL3103L
irf 607
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Untitled
Abstract: No abstract text available
Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382D
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
AN-994.
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C-150
Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
C-150
IRF530S
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
transistor* igbt 70A 300 V
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Untitled
Abstract: No abstract text available
Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94382B
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
O-220AB
O-262
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 94383 IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGS15B60KD
IRGSL15B60KD
O-262
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Untitled
Abstract: No abstract text available
Text: PD - 94381C IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381C
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
O-220AB
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C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383B
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
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Untitled
Abstract: No abstract text available
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
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IRF530S
Abstract: IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150
Text: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
O-220AB
O-262
AN-994.
IRF530S
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
C-150
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Untitled
Abstract: No abstract text available
Text: PD - 94382 IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGS10B60KD
IRGSL10B60KD
IRGS10B60KD
O-262
IRGSL10B60KD
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AN-994
Abstract: C-150 IRF530S IRGS6B60KD IRGSL6B60KD
Text: PD - 95229 IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB6B60KDPbF
IRGS6B60KD
IRGSL6B60KD
O-220
O-220AB
O-262
IRGB6B60KDPbF
IRGS6B60KD
AN-994.
AN-994
C-150
IRF530S
IRGSL6B60KD
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IRGB15B60K
Abstract: AN-994 C-150 IRGB15B60KD IRGS15B60KD IRGSL15B60KD 94383D
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
IRGB15B60K
AN-994
C-150
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
94383D
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A12Q
Abstract: No abstract text available
Text: PD - 94381 IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGS6B60KD
IRGSL6B60KD
IRGS6B60KD
O-262
IRGSL6B60KD
A12Q
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A12Q
Abstract: No abstract text available
Text: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.
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95229B
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
O-220AB
O-262
A12Q
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Untitled
Abstract: No abstract text available
Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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4925A
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
IRGB10B60KD
IRGS10B60KD
O-262
IRGSL10B60KD
AN-994.
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IRGB6B60KDPBF
Abstract: AN-994 C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD IRF53
Text: PD - 95229A IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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5229A
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
O-220AB
IRGB6B60KD
O-262
IRGS6B60KD
IRGSL6B60KD
AN-994.
IRGB6B60KDPBF
AN-994
C-150
IRF530S
IRGB6B60KD
IRGSL6B60KD
IRF53
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AN-994
Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.
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4925A
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
O-220AB
IRGB10B60KD
IRGS10B60KD
O-262
IRGSL10B60KD
AN-994.
AN-994
C-150
IRF530S
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
IRL3103L
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