Si8809EDB
Abstract: No abstract text available
Text: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21
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Si8809EDB
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21
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Si8809EDB
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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74369
Abstract: si1465
Text: SPICE Device Model Si1465DH Vishay Siliconix P-Channel 8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1465DH
18-Jul-08
74369
si1465
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FC809
Abstract: SB007-03CP
Text: Ordering number :EN3908A FC809 Silicon Barrier Diode 30V, 70mA Rectifier Applications Package Dimensions • General rectification applications. · High frequency rectification switching regulators, converters, choppers . unit:mm 1236A [FC809] Features · Low forward voltage (VF max=0.55V) .
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EN3908A
FC809
FC809]
FC809
SB007-03CP,
SB007-03CP
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN3908A FC809 Silicon Barrier Diode 30V, 70mA Rectifier Applications Package Dimensions • General rectification applications. · High frequency rectification switching regulators, converters, choppers . unit:mm 1236A [FC809] Features · Low forward voltage (VF max=0.55V) .
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EN3908A
FC809
FC809]
FC809
SB007-03CP,
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SQM120P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQM120P06-07L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: 1SMA4741 THRU 1SMA200Z Surface Mount Silicon Zener Diode Voltage Range 11 to 200 Volts 1.0 Watts Peak Power SMA/DO-214AC Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction
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1SMA4741
1SMA200Z
SMA/DO-214AC
260OC
MIL-STD-750,
1SMA200Z)
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Untitled
Abstract: No abstract text available
Text: SQM110P06-07L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120
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SQM110P06-07L
AEC-Q101
2002/95/EC
O-263
SQM110P06-07L-GE3
18-Jul-08
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SQM120P06-07L
Abstract: No abstract text available
Text: SQM120P06-07L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.0067 RDS(on) (Ω) at VGS = - 4.5 V 0.0088 ID (A) - 120
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SQM120P06-07L
AEC-Q101
2002/95/EC
O-263
O-263
SQM120P06-07L-GE3
18-Jul-08
SQM120P06-07L
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infineon marking TO-252
Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N
Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)
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IPB12CNE8N
IPI12CNE8N
IPD12CNE8N
IPP12CNE8N
IEC61249-2-21
PG-TO263-3
infineon marking TO-252
IEC61249-2-21
PG-TO220-3
12CNE8N
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12CNE8N
Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff
Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)
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IPB12CNE8N
IPI12CNE8N
IPD12CNE8N
IPP12CNE8N
IPB12CN10N
PG-TO263-3
PG-TO252-3
12CNE8N
PG-TO220-3
DIODE 809 marking
IPD12CNE8NG
marking ff
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12CNE8N
Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8 DS68
Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)
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IPB12CNE8N
IPI12CNE8N
IPD12CNE8N
IPP12CNE8N
PG-TO263-3
PG-TO252-3
12CNE8N
PG-TO220-3
12CNE8
DS68
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PG-TO220-3
Abstract: IPD12CNE8N IPP12CNE8N
Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) 85 V 12.4 ID m: 67 A • Very low on-resistance R DS(on)
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IPB12CNE8N
IPI12CNE8N
IPD12CNE8N
IPP12CNE8N
PG-TO263-3
PG-TO252-3
PG-TO220-3
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Untitled
Abstract: No abstract text available
Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)
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IPB12CNE8N
IPI12CNE8N
IPD12CNE8N
IPP12CNE8N
PG-TO263-3
PG-TO252-3
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IMP809SEUR
Abstract: AOxx SOT-23 69HC11 IMP809 MAX811TEUS IMP809LEUR-T 805L IMP690A IMP809s IMP810
Text: POWER MANAGEMENT Supervisors IMP690A ,692A , 802L/M, 805L µP Supervisor with Battery Backup Switch IMP705/6/7/8, 813L Low-Power µP Supervisor Circuits IMP809, IMP810 3-Pin Microcontroller Power Supply Supervisor IMP811 , IMP81 2 4-Pin µP Voltage Supervisor with Manual Reset
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IMP690A
802L/M,
IMP705/6/7/8,
IMP809,
IMP810
IMP811
IMP81
408-432-9100/www
IMP692A
IMP809SEUR
AOxx SOT-23
69HC11
IMP809
MAX811TEUS
IMP809LEUR-T
805L
IMP690A
IMP809s
IMP810
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STY105NM50N
Abstract: 105NM50N
Text: STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh II Power MOSFET in a Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) ■ 100% avalanche tested
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STY105NM50N
Max247
Max247
STY105NM50N
105NM50N
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Untitled
Abstract: No abstract text available
Text: FCH104N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCH104N60F
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Untitled
Abstract: No abstract text available
Text: STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh II Power MOSFET in a Max247 package Datasheet - production data Features Order code VDSS @TjMAX RDS on max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) 1 2 • 100% avalanche tested
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STY105NM50N
Max247
Max247
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e5p02
Abstract: POWER STEP UP
Text: NTMS5P02R2 Power MOSFET -5.4 Amps, -20 Volts P−Channel Enhancement−Mode Single SO−8 Package Features http://onsemi.com • High Density Power MOSFET with Ultra Low RDS on • • • • • Providing Higher Efficiency Miniature SO−8 Surface Mount Package − Saves Board Space
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NTMS5P02R2
e5p02
POWER STEP UP
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fairchild 6130
Abstract: No abstract text available
Text: FCP104N60F N-Channel SuperFET ll FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCP104N60F
fairchild 6130
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Untitled
Abstract: No abstract text available
Text: FCH104N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance
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FCH104N60F
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d 1667
Abstract: marking bbb2 S380D
Text: 17E D TELEFUNKEN ELECTRONIC ODD^flflS 1 • ALGG m S 380 D • S 381 D YGiyilHUIMtiM electronic Creative lechnôtogfes 1 Silicon Mesa Diode 01 -1 ST Application: Rectifier Features: • Glass passivated junction • Hermetically sealed package Dim ensions in mm
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S380D
S380DS381D
d 1667
marking bbb2
S380D
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in 4008 diode
Abstract: DIODE 4008 "DIODE" 4008 DIODE 809 marking 1T364 3155 diode cd 3301 diode marking 809
Text: SONY 1T364 Silicon Variable Capacitance Diode_ For the availability of this product, please contact tne sales office. Description The 1T364 is a variable capacitance diode designed for the tuning of wide band multichannel M-235 CATV tuners.
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1T364
1T364
C2/C25)
Ta-25
in 4008 diode
DIODE 4008
"DIODE" 4008
DIODE 809 marking
3155 diode
cd 3301
diode marking 809
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV809LT1/D SEMICONDUCTOR TECHNICAL DATA S ilicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods.
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MMBV809LT1/D
MMBV809LT1
OT-23
O-236AB)
fei3Li72SS
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