MAX6685
Abstract: MAX6685AU40L
Text: 19-2459; Rev 2; 4/03 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper
|
Original
|
MAX6685/MAX6686
21-0036J
MAX6686AU75L
MAX6686AU75H-T
MAX6686AU75H
MAX6686AU75L-T
MAX6686AU75L
MAX6685
MAX6685AU40L
|
PDF
|
MAX320CSA
Abstract: No abstract text available
Text: 19-0350; Rev 0; 12/94 Precision, Dual-Supply, SPST Analog Switches _Applications Battery-Operated Systems Sample-and-Hold Circuits Heads-Up Displays Guidance and Control Systems Audio and Video Switching Military Radios Test Equipment
|
Original
|
MAX320/MAX321/MAX322
MAX320
MAX321
MAX322
100pA
150ns
100ns
MAX320C
21-0036J
MAX320CSA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC5846LS6 v01.0613 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Typical Applications Features The HMC5846LS6 is ideal for: Saturated Output Power: 35.5 dBm @ 30% PAE • Point-to-Point Radios High Output IP3: 42.5 dBm
|
Original
|
HMC5846LS6
HMC5846LS6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC5846LS6 v01.0414 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Typical Applications Features The HMC5846LS6 is ideal for: Saturated Output Power: 35.5 dBm @ 30% PAE • Point-to-Point Radios High Output IP3: 42.5 dBm
|
Original
|
HMC5846LS6
HMC5846LS6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT 3 9 Typical Applications Features The hmC965lp5e is ideal for: saturated output power: +34 dBm @ 20% pAe
|
Original
|
HMC965LP5E
HMC965LP5E
|
PDF
|
H965
Abstract: No abstract text available
Text: HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 Typical Applications Features The HMC965LP5E is ideal for: Saturated Output Power: +34 dBm @ 20% PAE
|
Original
|
HMC965LP5E
HMC965LP5E
H965
|
PDF
|
H965
Abstract: No abstract text available
Text: HMC965LP5E v01.0411 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 Typical Applications Features The HMC965LP5E is ideal for: Saturated Output Power: +34 dBm @ 20% PAE
|
Original
|
HMC965LP5E
HMC965LP5E
H965
|
PDF
|
MAX4684EBC
Abstract: diode code B124 MAX4684ETB T
Text: 19-1977; Rev 3; 2/03 0.5Ω/0.8Ω Low-Voltage, Dual SPDT Analog Switches in UCSP Features ♦ 12-Bump, 0.5mm-Pitch UCSP ♦ NC Switch RON 0.5Ω max +2.7V Supply (MAX4684) 0.8Ω max (+2.7V Supply) (MAX4685) ♦ NO Switch RON 0.8Ω max (+2.7V Supply) ♦ RON Match Between Channels
|
Original
|
MAX4684/MAX4685
MAX4684/MAX4685
MAX4684
MAX4685
MAX4684EBC
diode code B124
MAX4684ETB T
|
PDF
|
H965
Abstract: EVAL01-HMC965LP5E HMC965LP5E h965 transistor transistor h965
Text: HMC965LP5E v00.1210 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 Typical Applications Features The HMC965LP5E is ideal for: Saturated Output Power: +34 dBm @ 20% PAE
|
Original
|
HMC965LP5E
HMC965LP5E
H965
EVAL01-HMC965LP5E
h965 transistor
transistor h965
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC5846LS6 v00.0111 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - Linear & Power - SMT 9 Typical Applications Features The HMC5846LS6 is ideal for: Saturated Output Power: 35.5 dBm @ 30% PAE • Point-to-Point Radios
|
Original
|
HMC5846LS6
HMC5846LS6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC995LP5GE V02.1112 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Typical Applications Features The HMC995LP5GE is ideal for: Intergrated Power Detector • Point-to-Point Radios Saturated Output Power: 35.5 dBm @ 24% PAE
|
Original
|
HMC995LP5GE
HMC995LP5GE
|
PDF
|
t85 diode
Abstract: photodiode pin alpha RF capacitor 1pF
Text: HMC799LP3E v01.1009 12 DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER Typical Applications Features The HMC799LP3E is ideal for: 10 kOhm Transimpedance • Laser Sensor Very Low Noise: 150nA Input RMS Noise over 700 MHz Bandwidth • FDDI Receiver 700 MHz Analog Bandwidth
|
Original
|
HMC799LP3E
HMC799LP3E
150nA
t85 diode
photodiode pin alpha
RF capacitor 1pF
|
PDF
|
RF capacitor 1pF
Abstract: No abstract text available
Text: HMC799LP3E v00.0909 12 DC - 700 MHz, 10 kOhm TRANSIMPEDANCE AMPLIFIER Typical Applications Features The HMC799LP3E is ideal for: 10 kOhm Transimpedance • Laser Sensor Very Low Noise: 150nA Input RMS Noise over 700 MHz Bandwidth • FDDI Receiver 700 MHz Analog Bandwidth
|
Original
|
HMC799LP3E
HMC799LP3E
150nA
RF capacitor 1pF
|
PDF
|
50 watt amplifier circuit diagram
Abstract: No abstract text available
Text: HMC995LP5GE v01.0412 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Typical Applications Features The HMC995LP5GE is ideal for: Intergrated Power Detector • Point-to-Point Radios Saturated Output Power: 35.5 dBm @ 24% PAE
|
Original
|
HMC995LP5GE
HMC995LP5GE
50 watt amplifier circuit diagram
|
PDF
|
|
15 watt power supply circuit diagram
Abstract: H995
Text: HMC995LP5GE v00.0611 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Typical Applications Features The HMC995LP5GE is ideal for: Intergrated Power Detector • Point-to-Point Radios Saturated Output Power: 35.5 dBm @ 24% PAE
|
Original
|
HMC995LP5GE
HMC995LP5GE
15 watt power supply circuit diagram
H995
|
PDF
|
H995
Abstract: 5 watt microwave amplifier Digital microwave radio 60 GHz PIN diode EVAL01-HMC995LP5GE
Text: HMC995LP5GE v00.0611 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Typical Applications Features The HMC995LP5GE is ideal for: Intergrated Power Detector • Point-to-Point Radios Saturated Output Power: 35.5 dBm @ 24% PAE
|
Original
|
HMC995LP5GE
HMC995LP5GE
H995
5 watt microwave amplifier
Digital microwave radio
60 GHz PIN diode
EVAL01-HMC995LP5GE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC949 v00.0910 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz AMPLIFIERS - LINEAR & POWER - CHIP 3 Typical Applications Features The HMC949 is ideal for: Saturated Output Power: +35.5 dBm @ 26% PAE • Point-to-Point Radios High Output IP3: +42 dBm
|
Original
|
HMC949
HMC949
|
PDF
|
MAX4610CSD
Abstract: MAXIM INTEGRATED PRODUCTS 74HC4066 SOIC
Text: 19-4793; Rev 5; 6/07 Low-Voltage, Quad, SPST CMOS Analog Switches _Features ♦ Offered in Automotive Temperature Range -40°C to +125°C ♦ Guaranteed On-Resistance 100Ω max (5V Supply) 46Ω max (12V Supply) ♦ Guaranteed Match Between Channels (4Ω, max)
|
Original
|
MAX4610/MAX4611/MAX4612
MAX4610
MAX4611
MAX4612
21-0066I
U14-1*
MAX4610C
MAX4610EUD+
MAX4610CSD
MAXIM INTEGRATED PRODUCTS
74HC4066 SOIC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC949 v02.0211 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - lineAr & power - Chip 3 Typical Applications Features The hmC949 is ideal for: saturated output power: +35.5 dBm @ 26% pAe • Point-to-Point Radios high output ip3: +42 dBm
|
Original
|
HMC949
HMC949
|
PDF
|
MMIC POWER AMPLIFIER hemt
Abstract: wedge Digital microwave radio
Text: HMC949 v01.1010 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - Linear & Power - Chip 3 Typical Applications Features The HMC949 is ideal for: Saturated Output Power: +35.5 dBm @ 26% PAE • Point-to-Point Radios High Output IP3: +42 dBm
|
Original
|
HMC949
HMC949
MMIC POWER AMPLIFIER hemt
wedge
Digital microwave radio
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC949 v02.0211 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - Linear & Power - Chip 3 Typical Applications Features The HMC949 is ideal for: Saturated Output Power: +35.5 dBm @ 26% PAE • Point-to-Point Radios High Output IP3: +42 dBm
|
Original
|
HMC949
HMC949
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-2646; Rev 2; 12/06 50Ω, Low-Voltage, Quad SPST/Dual SPDT Analog Switches in UCSP Features The MAX4747–MAX4750 low-voltage, quad single-pole single-throw SPST /dual single-pole/double-throw (SPDT) analog switches operate from a single +2V to +11V supply and handle rail-to-rail analog signals.
|
Original
|
MAX4747
MAX4750
MAX4748
MAX4750ETE-T
MAX4750ETE+
MAX4750ETE
MAX4750EUD
MAX4750EUD+
MAX4750EUD
|
PDF
|
varactor diode datasheet
Abstract: HMC-C030 wideband VCO
Text: HMC-C030 v03.0708 WIDEBAND VCO w/ BUFFER AMPLIFIER MODULE, 8.0 - 12.5 GHz Features Wide Tuning Bandwidth High Output Power: +21 dBm SSB Phase Noise: -83 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +8V to +15V @ 195 mA Typical Applications
|
Original
|
HMC-C030
HMC-C030
varactor diode datasheet
wideband VCO
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC-C030 v03.0708 WIDEBAND VCO w/ BUFFER AMPLIFIER MODULE, 8.0 - 12.5 GHz Features Wide Tuning Bandwidth High Output Power: +21 dBm SSB Phase Noise: -83 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +8V to +15V @ 195 mA Typical Applications
|
Original
|
HMC-C030
HMC-C030
|
PDF
|