Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V
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RM900DB-90S
20K/kW
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900HC-90S ● IF . 900A ● VRRM . 4500V
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RM900HC-90S
21K/kW
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a3101
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900HC-90S ● IF . 900A ● VRRM . 4500V
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RM900HC-90S
21K/kW
a3101
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V
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RM900DB-90S
20K/kW
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semikron skiip 942
Abstract: No abstract text available
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Skiip 942 gb 120 317 ctv f
Abstract: semikron skiip 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Skiip 942 gb 120 317 ctv f
Abstract: ctv circuit semikron skiip 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Skiip 942 gb 120 317 ctv f
Abstract: semikron skiip 942 skiip 942 gb 120 317 skiip gd 120 skiip gb 120 IC-900A skiip 942 GD 120 317 CTV SKIIP CASE 942
Text: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
Skiip 942 gb 120 317 ctv f
semikron skiip 942
skiip 942 gb 120 317
skiip gd 120
skiip gb 120
IC-900A
skiip 942 GD 120 317 CTV
SKIIP CASE 942
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diode A782
Abstract: t119 A782 A782EM A782EN A782FB A782FD A782FM A782FN A782FP
Text: A782 53mm RECTIFIER DIODE 7000V / 900A SPCO The A782 rectifier diode features a nominal 53mm silicon junction diameter design, manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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A782GP
A782FN
A782FM
A782FD
A782FB
A782FP
A782EN
A782EM
150oC
-40oC
diode A782
t119
A782
A782EM
A782EN
A782FB
A782FD
A782FM
A782FN
A782FP
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KA 2133 A
Abstract: diode rectifier 900A A782 A782EM A782EN A782FB A782FD A782FM A782FN A782FP
Text: A782 53mm RECTIFIER DIODE 7000V / 900A The A782 rectifier diode features a nominal 53mm silicon junction diameter design, manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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A782GP
A782FN
A782FM
A782FD
A782FB
A782FP
A782EN
A782EM
91C\A782PWR
150oC
KA 2133 A
diode rectifier 900A
A782
A782EM
A782EN
A782FB
A782FD
A782FM
A782FN
A782FP
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT N DD B6U 134 N 16 RR Elektrische Eigenschaften / Electrical properties B6 Zieldaten Target data Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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semikron skiip 400 gb
Abstract: semikron skiip 33 1513gb172 semikron skiip 31 semikron skiip SKIIP APPLICATION SKIIP DRIVER skiip gb 120 PX16 SKIIP 33
Text: SKiiP 1513GB172-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB172-3DL
semikron skiip 400 gb
semikron skiip 33
1513gb172
semikron skiip 31
semikron skiip
SKIIP APPLICATION
SKIIP DRIVER
skiip gb 120
PX16
SKIIP 33
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semikron skiip 3
Abstract: semikron skiip 400 gb 1513GB122-3DL PX16
Text: SKiiP 1513GB122-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB122-3DL
semikron skiip 3
semikron skiip 400 gb
1513GB122-3DL
PX16
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1803GB122-3DW
Abstract: SK 69 DIODE IC-900A
Text: SKiiP 1803GB122-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1803GB122-3DW
1803GB122-3DW
SK 69 DIODE
IC-900A
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si 1125 hd
Abstract: semikron skiip 400 gb 1513GB173-3DL PX16
Text: SKiiP 1513GB173-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1513GB173-3DL
si 1125 hd
semikron skiip 400 gb
1513GB173-3DL
PX16
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semikron skiip 400 gb
Abstract: SemiSel 1803GB173-3DW
Text: SKiiP 1803GB173-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1803GB173-3DW
semikron skiip 400 gb
SemiSel
1803GB173-3DW
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semikron skiip 342
Abstract: semikron skiip 400 gb 12960 semikron skiip 12-0-12 transformer used 24v dc supply SKIIP APPLICATION skiip gb 120 1813GB123-3DL PX16 B75 diode
Text: SKiiP 1813GB123-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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1813GB123-3DL
semikron skiip 342
semikron skiip 400 gb
12960
semikron skiip
12-0-12 transformer used 24v dc supply
SKIIP APPLICATION
skiip gb 120
1813GB123-3DL
PX16
B75 diode
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BSM30GP60
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM30GP60
BSM30GP60
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BSM30GP60
Abstract: BSM30GP60 INVERTER CIRCUIT
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM30GP60
BSM30GP60
BSM30GP60 INVERTER CIRCUIT
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BSM30GP60
Abstract: BSM30GP60 INVERTER CIRCUIT Al2O3
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM30GP60
BSM30GP60
BSM30GP60 INVERTER CIRCUIT
Al2O3
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BSM30GP60
Abstract: BSM30GP60 INVERTER CIRCUIT
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM30GP60
BSM30GP60
BSM30GP60 INVERTER CIRCUIT
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D650S
Abstract: No abstract text available
Text: S Datenblatt / Data sheet Schnelle Diode Fast Diode Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Kenndaten Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften D650S
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D650S
D650S
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1513gb172
Abstract: No abstract text available
Text: SKiiP 1513GB172-3DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms
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1513GB172-3DL
1513GB172-3DL
1513gb172
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