8 port network switch CIRCUIT diagram
Abstract: hf power combiner broadband transformers power combiner broadband transformers generic spst switch UPP9401 2.4 GHZ 8 channel RF transmitter and Receiver circuit mobile charging circuit diagram schematic diagram of cell phone docking station HIGH POWER ANTENNA SWITCH PIN DIODE UPP1001
Text: CHAPTER - 6 PIN DIODE CONTROL CIRCUITS FOR WIRELESS COMMUNICATIONS SYSTEMS 2 NOTES Microsemi Corp.-Watertown•580 Pleasant St., Watertown, MA 02472•Tel. 617 926-0404•Fax. (617) 924-1235 3 PIN DIODE CONTROL CIRCUITS FOR WIRELESS COMMUNICATIONS SYSTEMS
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UM9301
UPP1001-1004,
UPP9401
8 port network switch CIRCUIT diagram
hf power combiner broadband transformers
power combiner broadband transformers
generic spst switch
UPP9401
2.4 GHZ 8 channel RF transmitter and Receiver circuit
mobile charging circuit diagram
schematic diagram of cell phone docking station
HIGH POWER ANTENNA SWITCH PIN DIODE
UPP1001
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Untitled
Abstract: No abstract text available
Text: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES
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DSF21035SV
DS4176-1
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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MMAD1108
Abstract: No abstract text available
Text: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting
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MMAD1108
16-Pin
RF01065,
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Untitled
Abstract: No abstract text available
Text: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting
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MMAD1103
14-Pin
RF01063,
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Untitled
Abstract: No abstract text available
Text: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting
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MMAD1103
14-Pin
RF01063,
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Untitled
Abstract: No abstract text available
Text: SEPTEMBER 1996 DSF20060SF ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters. ■ Choppers. ■ Inverse Parallel Diode. ■ Freewheel Diode. FEATURES
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DSF20060SF
DS4218-3
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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UM4301B
Abstract: z02 surface mounted transistor UM2100 Microwave PIN diode UM7301B RS12 UM4000 UM4300 UM6000 UM7000
Text: CHAPTER - 3 PIN DIODE RF ATTENUATORS 2 NOTES Microsemi Corp.-Watertown•580 Pleasant St., Watertown, MA 02472•Tel. 617 926-0404•Fax. (617) 924-1235 3 PIN DIODE VARIABLE ATTENUATORS INTRODUCTION An Attenuator [1] is a network designed to introduce a known amount of loss when functioning between two
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UM2100,
UM4000,
UM4300,
UM9552
UM6000,
UM7000
UM4301B
z02 surface mounted transistor
UM2100
Microwave PIN diode
UM7301B
RS12
UM4000
UM4300
UM6000
UM7000
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Diode SE-05
Abstract: QAL-785-04-F-18-1 QAL-785-04-F-18-2 QAL-785-04-F-18-3 780nm laser diode
Text: QAL-785-04-F-18-1/2/3 : AIGaAs Laser Diode [ FEATURES ] [ OVERVIEW ] [ APPLICATION ] - Visible Light Output : λp = 780nm - Optical Power Output : 5mW CW - Package Type : TO-18 5.6mmQ^ - Built-in Photo Diode for Monitoring Laser Diode QAL-780-04-D-18-1/2/3 is a MOCVD grown 780nm band
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QAL-785-04-F-18-1/2/3
780nm
QAL-780-04-D-18-1/2/3
780nm
QAL-785-04-F-18-1/2/3
22MAX
66MAX
Diode SE-05
QAL-785-04-F-18-1
QAL-785-04-F-18-2
QAL-785-04-F-18-3
780nm laser diode
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UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
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UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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FMXA-1106S
Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
Text: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode
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FMXA-1106S
Package---TO220F-2Pin
D01-002EA-051128
FMXA-1106S
XA1106
Diode XA1106
FMX-G26S
sanken lot number
B105
CF35
SANKEN power supply
SANKEN smps
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silicon general 16 pin ceramic dip J
Abstract: No abstract text available
Text: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight
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SG6100/SG6101
100mA
SG6100
SG6101
16-PIN
SG6101J
14-PIN
SG6100F
silicon general 16 pin ceramic dip J
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7552
Abstract: UM9301
Text: PIN DIODE UM9301 COMMERCIAL ATTENUATOR DIODE Features • Specified low distortion • Low rectification properties at low reverse bias • Resistance specified at 3 current points • High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special
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UM9301
UM9301
33/iHy
60dBmV
68mrr
7552
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Untitled
Abstract: No abstract text available
Text: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design
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UM9701
UM9701
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Untitled
Abstract: No abstract text available
Text: PIN DIODE UM9301 COMMERCIAL ATTENUATOR DIODE Features • • • • Specified low distortion Low rectification properties at low reverse bias Resistance specified at 3 current points High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special
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UM9301
UM9301
60dBm
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Untitled
Abstract: No abstract text available
Text: UM9301 PIN DIODE COMMERCIAL ATTENUATOR DIODE Features • • • • Specified low distortion Low rectification properties at low reverse bias Resistance specified at 3 current points High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special
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UM9301
UM9301
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switch diode
Abstract: UM9401F ti lf antenna design HIGH POWER ANTENNA SWITCH PIN DIODE
Text: SURFACE MOUNT PIN DIODE UM9401F Ceramic Package Commercial Two-Way Radio Antenna Switch Diode FEATURES DESCRIPTION • • • • • With high isolation, low loss, and low distortion characteristics, this Microsemi ceramic package PIN diode is perfect for two-way radio antenna switch applications where size and
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UM9401F
50MHz
51MHz
100mA
switch diode
UM9401F
ti lf antenna design
HIGH POWER ANTENNA SWITCH PIN DIODE
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Untitled
Abstract: No abstract text available
Text: SË GEC P L E S S E Y JANUARY 1996 SEMI CO NDUC TOR S DS4176-1.3 DSF21035SV FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 3000A Jf av 20000A FSM 1500jiC Qr 6.0|is *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.
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DS4176-1
DSF21035SV
0000A
1500jiC
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
bfl522
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sg32
Abstract: SG3212F SG3212J CERAMIC FLATPACK jantx diodes
Text: SG3212 5ILIŒ1N GENERAL DUAL DIODE BRIDGE LIN EA R IN TEG R A TED C IR C U IT S DESCRIPTION FEATURES The Silicon General dual diode bridge features high breakdown and low forward vo lta g e . • 60V minimum breakdown voltage » 1A current capability per diode
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SG32U
MIL-S-19500
SG3212
14-PIN
SG3212J/883B
SG3212J
SG3212F/883B
SG3212F
sg32
SG3212F
SG3212J
CERAMIC FLATPACK
jantx diodes
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UPP1004
Abstract: UPP1001 UPP1002 APP1004
Text: m m m Wturtown, HA m Micnosemi SURFACE MOUNT PACKAGE PIN DIODE 400 V 2.5 WATT Commercial Two-Way Radio Antenna Switch Diode UPP1001 UPP1002 UPP1004 FEATURES DESCRIPTION . . . . With high isolation, low loss, and low distortion characteristics, this Hicroseii P o w e n i t e PIN diode is perfect for two-way radio antenna switch
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UPP1001
UPP1002
UPP1004
100MHz,
UPP1001,
UPP10D1,
UPP1001
UPP1002
APP1004
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SG6101J
Abstract: sg6101
Text: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has
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SG6100/SG6511
SG6101/SG6510
16-PIN
SG6101J
1N6101)
14-PIN
SG6101J
sg6101
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Untitled
Abstract: No abstract text available
Text: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.
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DS4231
DSF21060SV
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
37bfl522
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