Z6 DIODE
Abstract: BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C4V7 BZX84C51
Text: Diode, Zener Silicon Planar Voltage Regulator Diode Feature: Low voltage general purpose voltage regulator diode. Absolute Maximum Ratings Ta = 25°°C Description Symbol Working Voltage Tolerance Value Unit ±5 % 250 mA Repetitive Peak Forward Current IFRM
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
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FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
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SVC364
Abstract: No abstract text available
Text: Ordering number :EN4275A SVC364 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic
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EN4275A
SVC364
SVC364]
125such
SVC364
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SVC364
Abstract: No abstract text available
Text: Ordering number :EN4275A SVC364 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic
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EN4275A
SVC364
SVC364]
12such
SVC364
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SVC354
Abstract: No abstract text available
Text: Ordering number :EN4274A SVC354 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic
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EN4274A
SVC354
SVC354]
SVC354
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SVC354
Abstract: No abstract text available
Text: Ordering number :EN4274A SVC354 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic
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EN4274A
SVC354
SVC354]
SVC354
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BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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DS2102SY
Abstract: DS2102SY15 DS2102SY16 DS2102SY17 DS2102SY18 DS2102SY19 DS2102SY20
Text: DS2102SY DS2102SY Rectifier Diode Replaces September 2001 version, DS4171-5.0 DS4171-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2000V ■ High Surge Capability IF AV 6654A IFSM APPLICATIONS 100000A ■ Rectification ■ Freewheel Diode
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DS2102SY
DS4171-5
00000A
DS2102SY20
DS2102SY19
DS2102SY18
DS2102SY17
DS2102SY16
DS2102SY
DS2102SY15
DS2102SY16
DS2102SY17
DS2102SY18
DS2102SY19
DS2102SY20
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AN4839
Abstract: DS2102SY DS2102SY15 DS2102SY16 DS2102SY17 DS2102SY18 DS2102SY19 DS2102SY20
Text: DS2102SY DS2102SY Rectifier Diode Replaces September 2001 version, DS4171-5.0 DS4171-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2000V ■ High Surge Capability IF AV 6654A IFSM APPLICATIONS 100000A ■ Rectification ■ Freewheel Diode
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DS2102SY
DS4171-5
00000A
DS2102SY20
DS2102SY19
DS2102SY18
DS2102SY17
DS2102SY16
AN4839
DS2102SY
DS2102SY15
DS2102SY16
DS2102SY17
DS2102SY18
DS2102SY19
DS2102SY20
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8470B
Abstract: agilent 8472b 8472B apc-7 connector 423B 08473-80002
Text: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • • • • • Agilent 423B Excellent broadband flatness Low broadband SWR High burnout protection Environmentally rugged Field replaceable diode elements I 50 µA/div
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8470B,
8472B,
8473B/C
8470B
8472B
8473B
8473C
dete44
847xB/C
8472B
8470B
agilent 8472b
apc-7 connector
423B
08473-80002
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8472B
Abstract: agilent 8472b 00423-60003 08473-80002 08470-60012 423B 8470 Detectors low barrier schottky 8470B
Text: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • • • • • Agilent 423B Excellent broadband flatness Low broadband SWR High burnout protection Environmentally rugged Field replaceable diode elements I 50 µA/div
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8470B,
8472B,
8473B/C
8470B
8472B
8473B
8473C
847xB/C
8472B
8473C
agilent 8472b
00423-60003
08473-80002
08470-60012
423B
8470
Detectors
low barrier schottky
8470B
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WARBLE TONE GENERATORS
Abstract: piezo transformer driver 6v 2100 Zener diode Telephone Tone Ringer c1100nf WS2418 tone ringer 175-104 "Piezo Speaker" Amplifier TELEPHONE TONE RINGERS
Text: TELEPHONE TONE RINGER WITH BRIDGE DIODE WS2418 The WS2418 is a monolithic integrated circuit telephone tone ringer with bridge diode, when coupled with an appropriate transducer, it replaces the electromechanical bell. This device is designed for use with either a piezo
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WS2418
WS2418
WARBLE TONE GENERATORS
piezo transformer driver
6v 2100 Zener diode
Telephone Tone Ringer
c1100nf
tone ringer
175-104
"Piezo Speaker" Amplifier
TELEPHONE TONE RINGERS
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LTC4098-3.6
Abstract: SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals
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FF400R12KE3
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
LTC4098-3.6
SXA-01GW-P0.6
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br - b2d
Abstract: br b2d
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br - b2d
br b2d
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Untitled
Abstract: No abstract text available
Text: MXP1144 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device
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MXP1144
ph979-8220,
100mm
MXP1144
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Untitled
Abstract: No abstract text available
Text: MXP2001 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device
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MXP2001
Microsem80
MXP2001
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photovoltaic cell
Abstract: Photovoltaic MXP1144 "PHOTOVOLTAIC CELL"
Text: MXP1144 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device
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MXP1144
ph-979-8220,
100mm
MXP1144
photovoltaic cell
Photovoltaic
"PHOTOVOLTAIC CELL"
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photovoltaic
Abstract: MXP1125
Text: MXP1125 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device
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MXP1125
MXP1125
photovoltaic
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Untitled
Abstract: No abstract text available
Text: MXP1005 Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device
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MXP1005
MXP1005
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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714 diode
Abstract: DIODE 1T4
Text: _ • 7fl2ficlc:H OOOROIB ROHfn 1 T 4 ■ R H M _ 1SR139 -100 DIODE _8 Whatney, Irvine, CA 92718 MOLDED RECTIFYING DIODE Silicon Diffused Junction APPLICATION DIMENSIONS General rectification CATHODE BAND ( Green) TYPE NO. Lot No. *0.6±0.1 FEATURES
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CA92718
714 diode
DIODE 1T4
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diode in 5401
Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages
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TIED87,
TIED88,
X10-3
poss75042
SJ4IIL230)
JL3110209)
0L19O)
diode in 5401
for APD bias high-voltage
104 Ceramic Disc Capacitors 100v
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4274A
Abstract: No abstract text available
Text: Ordering num ber: EN 4274A No. 4274A i SVC354 Diffused Junction Type Silicon Diode SAMYO i Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications F eatures • Excellent matching characteristics because of composite type. • Manufacturing processes reducible and automatic mounting supported.
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SVC354
No4274-3/3
4274A
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