mosfet 300V 10A
Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Text: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits
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M01N60
O-251
O-252
O-251/252
00A/S
mosfet 300V 10A
M01N60
mosfet 10V 10A
n channel mosfet
mosfet 10a 600v
2a 400v mosfet to-251
FAST RECOVERY DIODE 10A 400V
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mosfet 600V 20A
Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Text: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits
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M02N60
O-251
O-252
O-251/252
O-220
00A/S
mosfet 600V 20A
M02N60
Mosfet 600V, 20A
TO 220 Package High current N CHANNEL MOSFET
MOSFET 400V TO-220
n channel mosfet
600V 2A MOSFET N-channel
N channel mosfet TO220
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M02N60B
Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
Text: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated
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M02N60B
O-251/252
O-220
O-220-3L
M02N60B
MOSFET 400V TO-220
n channel mosfet
600V 2A MOSFET N-channel
N channel mosfet TO220
mosfet 600V 20A
4470 mosfet
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zener diode RD2.2S
Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ
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RD10UJ
RD11UJ
RD12UJ
RD13UJ
RD15UJ
RD16UJ
RD18UJ
RD20UJ
RD22UJ
RD24UJ
zener diode RD2.2S
RD2.0HS
rd2.2m
nec 10f
RD16MW
str 450 a
RD4.3HS
NEC Zener diode RD3.0M
RD3.0HS
RD51P
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M04N60
Abstract: No abstract text available
Text: N Channel MOSFET M04N60 4.0A Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode TO-220 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Continuous Drain Current
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M04N60
O-220
M04N60
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Untitled
Abstract: No abstract text available
Text: PD-95969 HFA08PB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count VR = 600V
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PD-95969
HFA08PB60PbF
HFA08PB60
08-Mar-07
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irrm1
Abstract: HFA*B60
Text: PD-95969 HFA08PB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count VR = 600V
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PD-95969
HFA08PB60PbF
HFA08PB60
12-Mar-07
irrm1
HFA*B60
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Untitled
Abstract: No abstract text available
Text: HFA08PB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • • • • • • 2 RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation
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HFA08PB60PbF
HFA08PB60
12-Mar-07
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HFA08TB60S
Abstract: IRFP250
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-96037
HFA08TB60SPbF
HFA08TB60S
12-Mar-07
IRFP250
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Untitled
Abstract: No abstract text available
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-96037
HFA08TB60SPbF
HFA08TB60S
08-Mar-07
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HFA08TA60C
Abstract: No abstract text available
Text: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor
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HFA08TA60CPbF
HFA08TA60C
12-Mar-07
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MT5C1008DCJ-45/SMD a06t transistor
Abstract: No abstract text available
Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation
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PD-95737
HFA08TB60PbF
HFA08TB60
08-Mar-07
MT5C1008DCJ-45/SMD a06t transistor
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a06t
Abstract: hfa08tb60pbf
Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation
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PD-95737
HFA08TB60PbF
HFA08TB60
12-Mar-07
a06t
hfa08tb60pbf
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TC1617
Abstract: TCM1617MQR 200B TCM1617 TCM1617EV TCN75
Text: EVALUATION KIT AVAILABLE TCM1617 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs
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TCM1617
TCM1617
TCM1617-1
DS21485A
TC1617
TCM1617MQR
200B
TCM1617EV
TCN75
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HFA08TA60C
Abstract: IRFP250
Text: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor
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HFA08TA60CPbF
HFA08TA60C
18-Jul-08
IRFP250
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HFA08TA60C
Abstract: No abstract text available
Text: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor
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HFA08TA60CPbF
HFA08TA60C
11-Mar-11
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200B
Abstract: TC1068 TC1068MQR TCM1617EV TCN75
Text: EVALUATION KIT AVAILABLE TC1068 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs
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TC1068
TC1068
TC1068-1
DS21352A
200B
TC1068MQR
TCM1617EV
TCN75
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Untitled
Abstract: No abstract text available
Text: HFA120FA60P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA120FA60P
E78996
2002/95/EC
OT-227
OT-227
18-Jul-08
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IRFP250 application
Abstract: No abstract text available
Text: HFA120FA60P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA120FA60P
E78996
2002/95/EC
OT-227
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP250 application
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA120FA60P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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HFA120FA60P
E78996
2002/95/EC
OT-227
OT-227
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA120FA60P www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly
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VS-HFA120FA60P
E78996
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60SPbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • AEC-Q101 qualified • Material categorization:
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VS-HFA08TB60SPbF
AEC-Q101
VS-HFA08TB60S
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TL368A
Abstract: TR-Limiter TL-368A 1B63A ys diode 1B63 radar tube TL368 9x64
Text: T L 3 6 8 A TR-LIMITER GENERAL DESCRIPTION The TL368A is a broad band primerless TR-Limiier designed specifically for use with X-band radars. Consisting of a TR tube and a diode limiter, the TL368A is a small, rugged device which protects the mixer diode in the receiver from burning out as a
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TL368A
1B63A,
TL368A
8--32UNC
TR-Limiter
TL-368A
1B63A
ys diode
1B63
radar tube
TL368
9x64
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74LS115
Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Text: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con necting first darlington emitter to output should have series resistor. LS33 5-25
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