ECONO2-6PACK IGBT module
Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
Text: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
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GB35XF120K
ECONO2-6PACK IGBT module
IC 7425 datasheet
IR E78996
IR E78996 105
IRF E78996
E78996 IR
ic 4075 datasheet or gate
GB35XF120K
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78996
Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
Text: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
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GB15RF120K
78996
ci 4538
12v to 220 v ac inverter
IC 4538
IC td 4538
GB15RF120K
application of IC 4538
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GB25RF120K
Abstract: No abstract text available
Text: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
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GB25RF120K
indicated360V
GB25RF120K
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transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor c 2335
C-150
IRFI840G
IRGIB15B60KD1
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transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
transistor c 2335
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diode 10a 400v
Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
Param99
IRFI840G
O-220
diode 10a 400v
10a 400v bipolar transistor
transistor IRF 630
ultrafast diode 10a 400v
ultrafast swiching transistor
C-150
IRFI840G
IRGIB10B60KD1
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TRANSISTOR BIPOLAR 400V 20A
Abstract: C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
IRFI840G
O-220
TRANSISTOR BIPOLAR 400V 20A
C-150
IRFI840G
IRGIB10B60KD1
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transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
swiching 30A current source
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C-150
Abstract: IRFI840G IRGIB10B60KD1
Text: PD-94576 IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576
IRGIB10B60KD1
O-220
IRFI840G
O-220
C-150
IRFI840G
IRGIB10B60KD1
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Untitled
Abstract: No abstract text available
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
Collector-99
IRFI840G
O-220
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ECONO2-6PACK IGBT module
Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
Text: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient
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GB50XF120K
ECONO2-6PACK IGBT module
IR E78996
GB50XF120K IGBT 6PACK MODULE
IRF E78996
E78996 IR
GB50XF120K
ECONO-2
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A 3150 igbt driver
Abstract: IR E78996 IRF E78996 ECONO2-6PACK IGBT module ir igbt 1200V 40A igbt qualification circuit E78996 IR GB25XF120K
Text: PD - 94569 GB25XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient
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GB25XF120K
A 3150 igbt driver
IR E78996
IRF E78996
ECONO2-6PACK IGBT module
ir igbt 1200V 40A
igbt qualification circuit
E78996 IR
GB25XF120K
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hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
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25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
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GB50XF120K
Abstract: No abstract text available
Text: Bulletin PD - 94567 rev.A 05/03 GB50XF120K IGBT SIK PACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB50XF120K
E78996
GB50XF120K
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A 3150 igbt driver
Abstract: GB25XF120K
Text: Bulletin PD - 94569 rev.B 08/03 GB25XF120K IGBT SIXPACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB25XF120K
E78996
A 3150 igbt driver
GB25XF120K
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A 3150 igbt driver
Abstract: GB25XF120K 400uH
Text: Bulletin PD - 94569 rev.A 05/03 GB25XF120K IGBT SIK PACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB25XF120K
E78996
A 3150 igbt driver
GB25XF120K
400uH
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GB35XF120K
Abstract: marking 7850
Text: Bulletin PD - 94570 rev.A 05/03 GB35XF120K IGBT SIK PACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB35XF120K
E78996
GB35XF120K
marking 7850
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IR E78996
Abstract: GB25RF120K
Text: Bulletin PD - 94552 rev.A 05/03 GB25RF120K IGBT PIM MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB25RF120K
E78996
IR E78996
GB25RF120K
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GB50XF120K
Abstract: No abstract text available
Text: Bulletin PD - 94567 rev.B 08/03 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB50XF120K
E78996
GB50XF120K
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400uH
Abstract: GB35XF120K
Text: Bulletin PD - 94570 rev.B 08/03 GB35XF120K IGBT SIXPACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB35XF120K
E78996
400uH
GB35XF120K
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IRF7335D1
Abstract: No abstract text available
Text: PD- 94546 IRF7335D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode
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IRF7335D1
IRF7335D1
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555 igbt driver
Abstract: No abstract text available
Text: SKKD 46 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMIPACK 1 Rectifier Diode Modules -./0 -.0 #55 ?55
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3N172
Abstract: 3N172-73 3N173 X3N172-73
Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage
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3N172
3N173
3N172.
3N173.
200ns
DS020
3N172-73
3N173
X3N172-73
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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OCR Scan
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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