ZENER 1 WATT 6.8V
Abstract: CMZ5945B CMZ5925B zener 8.2V 8.2v zener diode zener diode 1.8v to 200v 16V SMA Zener Diode CMZ5936B diode ZENER 68v 10w Silicon Zener Diodes melf
Text: M AY , 1 9 9 9 # 9 90 2 New Product Announcement Diodes, Inc. Announces Surface Mount 1.0W Zener Diode SMAZ series available with nominal Zener voltage values of 5.6V thru 200V in SMA outline. ♦ General Information The Diodes Inc. 1.0 Watt Surface Mount Silicon Zener Diode is a high quality, well
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PTZ10
PTZ12
PTZ15
PTZ16
PTZ18
PTZ20
PTZ22
PTZ24
PTZ27
PTZ30
ZENER 1 WATT 6.8V
CMZ5945B
CMZ5925B
zener 8.2V
8.2v zener diode
zener diode 1.8v to 200v
16V SMA Zener Diode
CMZ5936B
diode ZENER 68v 10w
Silicon Zener Diodes melf
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Untitled
Abstract: No abstract text available
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current
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LTC4359
LT4256
LTC4260
LTC4223-1/LTC4223-2
4359f
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FDS3732
Abstract: 3b transistor
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current
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LTC4359
4359fa
com/LTC4359
FDS3732
3b transistor
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LTC4359CMS8
Abstract: No abstract text available
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current
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LTC4359
LT4256-1/LT4256-2
LTC4260
LTC4364
4359fb
com/LTC4359
LTC4359CMS8
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IN751a
Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current
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LTC4359
4359f
IN751a
3b transistor
IN759A
LTC4363
IN751
FDS3732
solar voltage regulator 24v
48v 150A mosfet switch
BSC011N03LS
block diagram 12V solar charge controller
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marking HX 6pin
Abstract: No abstract text available
Text: HX SO N6 PUSBMxX4-TL series High-speed USB OTG ESD protection diode arrays Rev. 1 — 9 December 2011 Preliminary data sheet 1. Product profile 1.1 General description PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge ESD diode arrays for USB 2.0 (On-The-Go (OTG) interfaces. The devices provide protection to
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Untitled
Abstract: No abstract text available
Text: ZENER DIODE BZX55C SERIES SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONk Zener Diode BZX55C Series 0.5W P a c k a g e : T O -9 2 S K A , / f f . s ./ j t I A A S T Y IJE >> ^ NO. 1 \ A Ta=25°C Type No BZX55C2V4 BZX55C2V7 BZX55C3V0 BZX55C3V3
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BZX55C
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
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1N series ZENER DIODE 5 to 10 volt watt
Abstract: 3993A diode 1N series ZENER DIODE 18 volt watt 1N 043 diode zener diodes 1N series
Text: 1 N 2 9 7 0 thru 1N 3015B and 1N 3 9 9 3 thru 1N 4000A Microsemi Corp. f diode experts SCOTTSDALE, AZ SANTA A N A . C A F o r m o r e i n f o r m a t i o n c a ll: 6 0 2 94 1-63 00 FEATURES • ZENER VOLTAGE 3.9 to 200V . VOLTAGE TOLERANCES; ± 5 % , ± 1 0 % and ± 2 0 % (See Note 1)
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3015B
1N series ZENER DIODE 5 to 10 volt watt
3993A diode
1N series ZENER DIODE 18 volt watt
1N 043 diode
zener diodes 1N series
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Untitled
Abstract: No abstract text available
Text: 1N938 asi SILICON ZENER DIODE DESCRIPTION: The 1N938 is a 9.0 V Silicon T em perature C om pensate Z ener Diode D esigned fo r G eneral Purpose V oltage R eference A pplications. PACKAGE STYLE DO-7 0 .1 0 5 [2 . 6 6 7 ] 0 .0 1 9 -0.0 2 1 0 . 4 8 3 -0 . 5 3 3 ]
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1N938
1N938
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Untitled
Abstract: No abstract text available
Text: Central CLL4689 TH RU CLL4714 Sem icon du ctor Corp. 500mW LOW LEVEL ZENER DIODE 5% TOLERANCE DESCRIPTION: The C E N T R A L S E M IC O N D U C T O R C L L 4 6 8 9 Se rie s Silicon Zener Diode is a high quality voltage regulator designed for applications requiring an
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CLL4689
CLL4714
500mW
CLL4690
CLL4691
CLL4692
CLL4693
CLL4694
CLL4695
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IN4702
Abstract: 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4698 1N4699 1N4700
Text: 1 9 8 9 9 6 3 CEN TRAL : : V ~T Ï g ngi?ga9 g KHS@©BBe3e5gfi@E? @ ® r ; p o '~ f -U '0 '7 61C 0 0 2 7 7 SEM ICONDUCTOR DE | l'iôT' it .B 00 00 57 7 | 1NA678 THRU 1N 47 H €©&a€ffS9B LOW LEVEL SILICON ZENER DIODE C@iifral Ê @ ü îis@ B îe isg st csr
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G000577
1N4678
CBR30
0000S23
O-105
O-106
IN4702
1N4679
1N4680
1N4681
1N4682
1N4683
1N4698
1N4699
1N4700
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1N938
Abstract: No abstract text available
Text: 1N938 asii SILICON ZENER DIODE D E S C R IP T IO N : The 1 N 9 3 8 is a 9.0 V Silicon T em perature C om pensate Z ener Diode Designed fo r G eneral Purpose V oltage R eference A pplications. P A C K A G E S T Y L E D O -7 M A X IM U M R A T IN G S If 7.5 mA
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1N938
1N938
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 015AZ2.0-015AZ12 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE nmA7? n~nmA7i? Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS Small Package Nominal voltage tolerance about ±2.5% 9 0 V -1 9 .V Ì . M A X IM U M RATINGS (Ta = 2 5°C SYMBOL RATING UNIT
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015AZ2
0-015AZ12
015AZ12
015AZ12
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Untitled
Abstract: No abstract text available
Text: D S 9 50 3 DALLAS SEMICONDUCTOR DS9503 ESD Protection Diode with Resistors SPECIAL FEATURES SYMBOL AND CONVENTIONS • Zener characteristic with voltage sn a p -b a ck to pro tect against ESD hits • High avalanche voltage, low leakage and low capaci
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DS9503
DS9502,
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Diode XA 1106
Abstract: No abstract text available
Text: TOSHIBA nm73 n~nm7i7 TOSHIBA DIODE 015Z2.0-015Z12 SILICON EPITAXIAL PLANAR TYPE Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS Small Package Nominal voltage tolerance about ±2.5% 0.8 ± 0.1 9 0 V -1 9 .V Ì n 1 1.3 + 0.1 . M A X IM U M RATINGS (Ta = 2 5°C
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015Z2
0-015Z12
015Z11
015Z12
Diode XA 1106
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M G P11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C
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P11N60ED/D
N60ED
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Untitled
Abstract: No abstract text available
Text: Zener Diode for Constant Voltage Control Anode Common Twin Type UMZ12N •Features 1}Compact mo!d type (UMD3) 2}High reiiaoility External dimensions {Units: mm) .•ca:3.2 ‘ 3±fc* C3 : •Construction Silicon epitaxial planar . ( B o A 9 oe * « * 0 -C 1
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UMZ12N
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VECO varistor
Abstract: victory engineering sv100d silicon carbide LED veco Silicon Varistors SV100A VECO SV100A victory engineering corporation
Text: [tj VICTORY ENGINEERING CORPORATION VICTORY ROAD, P. O. TW/X: 71O-0B3-4a3O BOX 559, TEL SPRINGFIELD, NEW JERSEY 07081 201 • 3 7 9 -5 9 0 0 VECO TECHNICAL BULLETIN MSV111 VECO DIFFUSED-JUNCTIOIM SILICON VARISTORS O PPO SITELY-P O LED DIODE PA IR S The term varistor defines a voltage sensitive
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71O-0B3-4a3O
MSV111
SV100A3
SV100
VECO varistor
victory engineering
sv100d
silicon carbide LED
veco
Silicon Varistors
SV100A
VECO SV100A
victory engineering corporation
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LT 5320 DIODE
Abstract: LT 5320
Text: NEC 400m w ZENER DIO DE ELECTRON DEVICE 1N746A— 1N759A 1 N 7 4 6 A ~ 1 N 7 5 9 A are D H D {Double Heatsink Diode construction planar type O U T L IN E D R A W IN G zener diodes possessing an allowable power dissipation of 400 m watt. FEATURES Unit : mm)
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1N746A--
1N759A
1N746A
1N747A
1N748A
1N749A
1N750A
1N751A
1N752A
1N753A
LT 5320 DIODE
LT 5320
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1S1969
Abstract: 1s1957 1s195 AW01-24 1S1962 1S196 N 75 z
Text: HITACHI/iOPTOELECTRONICS} L.Ö d F | 4 4 ^ 0 5 ^8C 09840 D 7 4 4 9 6 '¿US H I T A C H I / IÜPT 0 E L E C T R O N 1U5 •> • "J x ^ —y - i □□□clfl4D S — K Zener Diode I AW01 -Hr -2 9 M IN (1 .1 6 0 ) -6 2 M IN (2 .4 4 0 ) 5 MAX (0 .1 9 6 ) 29 M IN (1 .1 6 0 )
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56jb
Abstract: RD4.7JB RD5.1J NEC zener diode 35 series RD51JB RD6.8JB nec zener diode RD20JB zener rd9.1esb2 zener rd9.1eb
Text: SEC ELECTRON DEVICE R D 4 .7 J B — R D 3 9 J B L o w noise. S h a rp B re a k d o w n ch a ra c te ris tic s 4 0 0 m w Z en er D iode. NEC Type R D []J series are D H D Double Heatsink Diode con struction planar typ e Zener diode possessing an allow able power dissipation o f 400mW , featuring low noise and sharp breakdown characteristic. They are
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400mW
DO-35
40msl
56jb
RD4.7JB
RD5.1J
NEC zener diode 35 series
RD51JB
RD6.8JB
nec zener diode
RD20JB
zener rd9.1esb2
zener rd9.1eb
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DIODE RK 306
Abstract: 1ZB200 1ZB20 zener
Text: T O S H IB A 1 Z B 6 .8 -1 Z B 3 9 0 TO SHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8-1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package
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8-1ZB390
1ZB330-Z)
DIODE RK 306
1ZB200
1ZB20 zener
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Untitled
Abstract: No abstract text available
Text: 3EZ3.9D5 thru 3EZ200D5 Microsemi Corp. The a<cae e*p¡?rr.s SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES . SILICON 3 WATT ZEN ER DIODE ZENER VOLTAGE 3 .9 V to 200V • HIGH SURGE CURRENT RATIN G • 3 W ATTS DISSIPATIO N IN A NORM ALLY 1 W A TT PACKAGE
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3EZ200D5
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TCM1520A
Abstract: No abstract text available
Text: T C M 15 20A RING DETECTOR D 2 8 6 0 , OCTOBER 1 9 8 4 -R E V IS E D JA N U A R Y 1 9 8 8 • On-Chip 150-V Bridge Diode Configuration • Reliable • High Standby Impedance . . . 1 MQ Typ P PACKAGE TOP VIEW! Technology • Efficient High-Voltage Operation
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