BAR66
Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Text: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode
|
Original
|
PDF
|
|
BXY43P
Abstract: BXY43P-FP 43P-FP 43p MARKING CODE diode a02
Text: HiRel Silicon PIN Diode BXY 43P Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030
|
Original
|
PDF
|
43P-FP
Q62702X164
Q62702X167
de/semiconductor/products/35/35
de/semiconductor/products/35/353
BXY43P
BXY43P-FP
43P-FP
43p MARKING CODE
diode a02
|
44P-FP
Abstract: BXY44P BXY44P-FP Q62702X165 Q62702X166
Text: HiRel Silicon PIN Diode BXY 44P Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030
|
Original
|
PDF
|
44P-FP
Q62702X166
Q62702X165
de/semiconductor/products/35/35
de/semiconductor/products/35/353
44P-FP
BXY44P
BXY44P-FP
Q62702X165
Q62702X166
|
Untitled
Abstract: No abstract text available
Text: HL-A-3528H181W-A02 WHITE Features Description ●SINGLE COLOR. The White source color devices are made with Gallium ● SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Arsenide Phosphide on Gallium Phosphide White Light Emitting Diode. PROCESS. ● AVAILABLE ON TAPE AND REEL.
|
Original
|
PDF
|
HL-A-3528H181W-A02
2000PCS
A0707
SEP/16/2005
|
Untitled
Abstract: No abstract text available
Text: HL-A-3528H173W-A02 WHITE Features Description ●SINGLE COLOR. The White source color devices are made with Gallium ● SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Arsenide Phosphide on Gallium Phosphide White Light Emitting Diode. PROCESS. ● AVAILABLE ON TAPE AND REEL.
|
Original
|
PDF
|
HL-A-3528H173W-A02
2000PCS
A0909
NOV/03/2005
|
DTM180AA
Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS
|
Original
|
PDF
|
200mW
100mW
DTM180AA
DT-408
STD8018A
LP05018
LS1012
DTM180AB
|
Untitled
Abstract: No abstract text available
Text: FW4604 Ordering number : ENA0273 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW4604 General-Purpose Switching Device Applications Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in
|
Original
|
PDF
|
ENA0273
FW4604
PW10s)
2000mm2
PW10s
A0273-6/6
|
Untitled
Abstract: No abstract text available
Text: SHENZHEN HONGLI OPTO-ELECTRONIC CO．，LTD． HL-PC-2012U9YC Description Features z2.0mmx1.25mm zLOW SMT LED,0.68mm THICKNESS. zIDEAL The Yellow source color devices are made with DH InGaAIP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. zWIDE
|
Original
|
PDF
|
HL-PC-2012U9YC
3000PCS
A0221
APR/01/2005
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0273B FW4604 N-Channel Power MOSFET http://onsemi.com 30V, 6A, 39mΩ, –30V, –4.5A, 65mΩ, Complementary Dual SOIC8 Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in • •
|
Original
|
PDF
|
ENA0273B
FW4604
A0273-7/7
|
Untitled
Abstract: No abstract text available
Text: SHENZHEN HONGLI OPTO-ELECTRONIC CO．，LTD． HL-PC-2012H81VW Description Features z2.0mmx1.25mm zLOW SMT LED, 0.68mm THICKNESS. zIDEAL The Red source color devices are made with DH GaP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. zWIDE PINK
|
Original
|
PDF
|
HL-PC-2012H81VW
3000PCS
A0235
APR/08/2005
|
Untitled
Abstract: No abstract text available
Text: HL-A-3528U6YC YELLOW Features Description ●SINGLE COLOR. The Yellow source color devices are made with Gallium ● SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. PROCESS. ● AVAILABLE ON TAPE AND REEL.
|
Original
|
PDF
|
HL-A-3528U6YC
2000PCS
A0292
MAY/07/2005
22Pcs.
1000Hrs.
|
Untitled
Abstract: No abstract text available
Text: HL-A-3528U3YC YELLOW Features Description ●SINGLE COLOR. The Yellow source color devices are made with Gallium ● SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. PROCESS. ● AVAILABLE ON TAPE AND REEL.
|
Original
|
PDF
|
HL-A-3528U3YC
2000PCS
A0204
MAR/15/2005
22Pcs.
1000Hrs.
|
CL8800
Abstract: Pcb cl8800 tray qfn 6x6 QFN ac driver led
Text: Supertex inc. CL8801 Sequential Linear LED Driver Features General Description ►► Minimal component count base config: CL8801 + 4 resistors + diode bridge ►► No magnetics, no capacitors ►► Up to 13W output ►► >115Lm/W using efficient LEDs
|
Original
|
PDF
|
CL8801
115Lm/W
CL8801
CL8801,
DSFP-CL8801
A040412
CL8800
Pcb cl8800
tray qfn 6x6
QFN ac driver led
|
Untitled
Abstract: No abstract text available
Text: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain
|
Original
|
PDF
|
TN2130
DSFP-TN2130
A022309
|
|
|
Untitled
Abstract: No abstract text available
Text: SHENZHEN HONGLI OPTO-ELECTRONIC CO．，LTD． HL-A-3528S9AC RED Features Description ●SINGLE COLOR. The Red source color devices are made with Gallium ● SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Arsenide Phosphide on Gallium Phosphide Red Light Emitting Diode.
|
Original
|
PDF
|
HL-A-3528S9AC
2000PCS
A0231
APR/05/2005
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. CL8800 Sequential Linear LED Driver Features ►► Minimal component count base config: CL8800 + 6 resistors + diode bridge ►► No magnetics, no capacitors ►► Up to 7.5W output (13W w/ heat sink) ►► >110Lm/W using efficient LEDs
|
Original
|
PDF
|
CL8800
110Lm/W
CL8800
DSFP-CL8800
D031914
|
Untitled
Abstract: No abstract text available
Text: SHENZHEN HONGLI OPTO-ELECTRONIC CO．，LTD． HL-AA-2810S9FC Features RED Description ●2.8mmX1.0mm RIGHT ANGLE SMT LED, 1.2mm THICKNESS. The source color devices are made with InGaAIP ●LOW POWER CONSUMPTION. on SiC Light Emitting Diode. ●IDEAL FOR BACKLIGHT AND INDICATOR.
|
Original
|
PDF
|
HL-AA-2810S9FC
3000PCS
A0298
MAY/10/2005
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. CL8800 Sequential Linear LED Driver Features ►► Minimal component count base config: CL8800 + 6 resistors + diode bridge ►► No magnetics, no capacitors ►► Up to 7.5W output (13W w/ heat sink) ►► >110Lm/W using efficient LEDs
|
Original
|
PDF
|
CL8800
110Lm/W
CL8800
DSFP-CL8800
B121712
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BXY 44P HiRel Silicon PIN Diode Features • HiRel Discrete and Microwave Semiconductor • Current controlled RF resistor for RF attenuators and switches • High reverse voltage • Matched diode - pair • Hermetically sealed microwave package @sa qualified
|
OCR Scan
|
PDF
|
44P-FP
de/semiconductor/products/35/35
de/semiconductor/products/35/353
|
MB12A35V60
Abstract: MB11A06 MB11A02V60 MB11A02V80 MB11A06V40 MB11A01V20 MB11A06V80 MB11A02V20 a06 801 MB12A10V
Text: POW EREX IN C ~ T L I> F | 0001333 7 f 7“ - z 3 - 0 7 Thyristor and Diode Modules Single Phase Diode Modules toe@ Tc Am ps (°C) Vrrm (Volts) I fsm (Am ps) trr (typica l) (lisec) VlSOL (V r us) Package Type No. 1.5 50 50 50 — 1500 A01 MB11A01V05 1.5
|
OCR Scan
|
PDF
|
|
16DI
Abstract: diode 1d8 100C1595 DA0295 DA0795
Text: FEA TU R ES J • 30-500 MHz ■ ■ 50 m A,+5 VDC +40 dBm 3rd Order Intercept ■ 0.5 dB LSB, 63.5 dB Range t c PIN Diode 7 Section Attenuator ■ TTL Control ■ See 100C1595 For Connectorized Version ■ MODEL NO. t>A0295 I | jM <p | C y - - -M
|
OCR Scan
|
PDF
|
100C1595
DA0795
DA0295
50mT0
16DI
diode 1d8
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE ps2562L 1 2 4 MULTI OPTOCOUPLER SERIES ’ ’ FEATURES_ DESCRIPTION_ • PS2562-1, -2 and -4 and PS2562L-1, -2 and -4 are optically coupled isolators containing a GaAs light emitting diode and
|
OCR Scan
|
PDF
|
ps2562L
PS2562-1,
PS2562L-1,
PS25621
62L-1and
PS2562L-1
PS2562L-4
24-Hour
|
Untitled
Abstract: No abstract text available
Text: 1N4099 THRU 1N4135 AVAILABLE IN JANC CD4099 thru ZENER DIODE CHIPS ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135
|
OCR Scan
|
PDF
|
1N4099
1N4135
CD4099
CD4135
1N4135
530E554
CD4099
|
