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    DIODE A1N Search Results

    DIODE A1N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE A1N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    melf ZENER diode COLOR BAND

    Abstract: MIL-prf-19500/437 437H 1N5521B JANTXV 1N5531B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 fsc do-35 physical dimensions 1N5518D-1
    Text: INCH-POUND MIL-PRF-19500/437H 25 March 2008 SUPERSEDING MIL-PRF-19500/437G 12 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1,


    Original     		MIL-PRF-19500/437H MIL-PRF-19500/437G 1N5518B-1, 1N5518C-1, 1N5518D-1 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, melf ZENER diode COLOR BAND MIL-prf-19500/437 437H 1N5521B JANTXV 1N5531B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 fsc do-35 physical dimensions PDF

    mil-s-19500 qpl jantx1n5518b

    Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,


    Original     		MIL-PRF-19500/437D MIL-S-19500/437C 1N5518B-1, 1N5518C-1, 1N5518D-1 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1, 1N5518CUR-1, mil-s-19500 qpl jantx1n5518b 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518DUR-1 1N5546B-1 PDF

    DIODE B3N

    Abstract: B2n diode 4.7 B2 zener a3 6 zener B2 Zener HZ22-2 zener diode B2 Zener Diode C3 5 B1 5.6 zener GRZZ0002ZB-A
    Text: HZ-N Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1625-0100 Rev.1.00 Mar 25, 2008 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.


    Original     		REJ03G1625-0100 DO-35 REJ03G1625-0100 GRZZ0002ZB-A DIODE B3N B2n diode 4.7 B2 zener a3 6 zener B2 Zener HZ22-2 zener diode B2 Zener Diode C3 5 B1 5.6 zener GRZZ0002ZB-A PDF

    ATA5279

    Abstract: A6p DIODE TRANSISTOR A1p atmel 708 QFN44 QFN48 Atmel 710 Atmel ATmega 32 64 pin 9168B transistor a6n
    Text: LF Antenna Driver ATA5279P Thermal Considerations and PCB Design Hints 1. General To minimize EMC radiation, the ATA5279P is designed to drive antennas with a sinusoidal waveform. For the same reason the switching edges of the integrated boost transistor are decoupled. This, however, also leads to higher power dissipation and


    Original     		ATA5279P ATA5279P 9168B ATA5279 A6p DIODE TRANSISTOR A1p atmel 708 QFN44 QFN48 Atmel 710 Atmel ATmega 32 64 pin transistor a6n PDF

    FR4 epoxy dielectric constant 4.4

    Abstract: AT84AS004 FR4 epoxy dielectric constant 4.2 FR4 dielectric constant 4.4 thickness 1.6 AT84AS004-EB HP8665 FR4 epoxy dielectric constant 3.2 AT84AS004VTP HP16500C RO4003
    Text: AT84AS004-EB Evaluation Board . User Guide Table of Contents Section 1 Introduction . 1-1


    Original     		AT84AS004-EB 5432B FR4 epoxy dielectric constant 4.4 AT84AS004 FR4 epoxy dielectric constant 4.2 FR4 dielectric constant 4.4 thickness 1.6 HP8665 FR4 epoxy dielectric constant 3.2 AT84AS004VTP HP16500C RO4003 PDF

    AT84AS003

    Abstract: FR4 epoxy dielectric constant 4.4 digital rf delay line 4.3 GHz 142-0701-851 AT84AS003-EB RO4003 100 watt FR4 epoxy dielectric constant 4.2 FR4 epoxy dielectric AT84AS0003-EB
    Text: AT84AS003-EB Evaluation Board . User Guide Table of Contents Section 1 Introduction . 1-1


    Original     		AT84AS003-EB 5426B AT84AS003 FR4 epoxy dielectric constant 4.4 digital rf delay line 4.3 GHz 142-0701-851 RO4003 100 watt FR4 epoxy dielectric constant 4.2 FR4 epoxy dielectric AT84AS0003-EB PDF

    DIODE A7N

    Abstract: A7N transistor DIODE B4N d9n diode transistor a7n EBGA240 b7n diode DIODE A4N DIODE B3N AT84CS001TP-EB
    Text: Features • • • • • • • • • • • • • • High-speed ADC Family Companion Chip Selectable 1:2 or 1:4 DMUX Ratio Power Consumption: 2.6W LVDS Compatible Differential Data and Clock Inputs 100Ω Terminated LVDS Compatible Differential Data and Data Ready Outputs


    Original     		5402AS DIODE A7N A7N transistor DIODE B4N d9n diode transistor a7n EBGA240 b7n diode DIODE A4N DIODE B3N AT84CS001TP-EB PDF

    Untitled

    Abstract: No abstract text available
    Text: EV10DS130AZP Low Power 10-bit 3 Gsps Digital to Analog Converter with 4/2:1 Multiplexer Datasheet Main Features • • • • • • • • • • • • • 10-bit Resolution 3 GSps Guaranteed Conversion Rate 7 GHz Analog Output Bandwidth 4:1 or 2:1 Integrated Parallel MUX Selectable


    Original     		EV10DS130AZP 10-bit PDF

    EV10CS140TP-EB

    Abstract: EVX10CS140TPY EV10CS140
    Text: EV10CS140 10-bit 3.0 Gsps 1:4 DMUX Datasheet Main Features • • • • • • High-speed ADC Family Companion Chip 10-bit Data Additional 11th Bit in Simultaneous Mode Example: for Out-of-Range Bit Staggered or Simultaneous Data Outputs Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs


    Original     		EV10CS140 10-bit EV10CS140TP-EB EVX10CS140TPY EV10CS140 PDF

    DIODE A7N

    Abstract: No abstract text available
    Text: EV10CS140 10-bit 3.0 Gsps 1:4 DMUX Datasheet Main Features • • • • • • High-speed ADC Family Companion Chip 10-bit Data Additional 11th Bit in Simultaneous Mode Example: for Out-of-Range Bit Staggered or Simultaneous Data Outputs Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs


    Original     		EV10CS140 10-bit 1007B DIODE A7N PDF

    Untitled

    Abstract: No abstract text available
    Text: EV10DS130AGS Low Power 10-bit 3 Gsps DAC with 4/2:1 MUX Datasheet MAIN FEATURES • • • • • • • • • • • • • • • 10-bit resolution 3 Gsps guaranteed Conversion rate 60 ps full scale rise time 4:1 or 2:1 integrated parallel MUX selectable


    Original     		EV10DS130AGS 10-bit Clo42 PDF

    AT84AS004

    Abstract: npn transistor w27 AT84AS004VTPY
    Text: AT84AS004 10-bit 2 Gsps ADC With1:4 DMUX Datasheet Features • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input


    Original     		AT84AS004 10-bit 0829E AT84AS004 npn transistor w27 AT84AS004VTPY PDF

    npn transistor w27

    Abstract: AT84AS003 transistor a7n NF 840 AT84AS003VTP DIODE A7N AT84AS003-EB K27 npn AT84AS003CTP AT84AS004
    Text: Features • • • • • • • 10-bit Resolution 1.5 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input LVDS Output Compatibility


    Original     		10-bit 10-bit AT84AS003 5403B npn transistor w27 AT84AS003 transistor a7n NF 840 AT84AS003VTP DIODE A7N AT84AS003-EB K27 npn AT84AS003CTP AT84AS004 PDF

    AT8AS004

    Abstract: npn transistor w27 AT84AS004TP-EB 5N524 AT84AS004CTPY npn transistor w26
    Text: Features • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input LVDS Output Compatibility


    Original     		10-bit AT84AS004 AT8AS004 npn transistor w27 AT84AS004TP-EB 5N524 AT84AS004CTPY npn transistor w26 PDF

    npn transistor w27

    Abstract: npn transistor w26 AT84AS003VTPY
    Text: Features • • • • • • • 10-bit Resolution 1.5 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input LVDS Output Compatibility


    Original     		10-bit AT84AS003 npn transistor w27 npn transistor w26 AT84AS003VTPY PDF

    Diode BAY 71

    Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a


    OCR Scan     		1N456 BAW21A BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 CB-127. Diode BAY 71 Diode BAY 45 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49 PDF

    Untitled

    Abstract: No abstract text available
    Text: TtAY i 7 § ^ I I i ^ i M T O Ä L I ^ E L I I ^ S E l t c i 174 H it" A P LTCl 174-3.3/LTC1174-5 a TECHNOLOGY Micropower DC-to-DC Converter APRIL 1993 F€ATUR€S DESCRIPTION • High Efficiency up to 94% ■ Peak Inductor Current Independent of Inductor Value


    OCR Scan     		3/LTC1174-5 130pA LTC1174 PDF

    UC3854 adjust PFC

    Abstract: uc3854 UC3854 for PFC UC3854 wave PFC Power Factor Correction with the UC3854 uc3854 Application Note DN-39E uc3854 Application Schottky Diode 100V 6A uc3854 ac dc
    Text: y DN-39E UIMITRODE Design Note OPTIMIZING PERFORMANCE IN UC3854 POWER FACTOR CORRECTION APPLICATIONS by Bill Andreycak The performance of the UC3854 Power Factor Correction 1C in the 250 watt application example has been evaluated using a precision PFC/THD


    OCR Scan     		DN-39E UC3854 00V/0 50V/0 jlF/250 IF/450 UC3854 adjust PFC UC3854 for PFC UC3854 wave PFC Power Factor Correction with the UC3854 uc3854 Application Note DN-39E uc3854 Application Schottky Diode 100V 6A uc3854 ac dc PDF

    IRF830

    Abstract: IRF830.831 reliability irf830 diode on 832 IRF830-3 power MOSFET IRF830
    Text: N-CHANNEL POWER MOSFETS IRF830/831/832/833 FEATURES • • • • • • • TO-220 Lower Rqs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		IRF830/831/832/833 O-220 IRF830 IRF831 IRF832 IRF833 IRF830.831 reliability irf830 diode on 832 IRF830-3 power MOSFET IRF830 PDF

    Untitled

    Abstract: No abstract text available
    Text: 43 02 271 0 0 5 4 50 0 072 • ¡jy H A R R HAS 2N6851 I S Avalanche-Energy-Rated P-Channel Power MOSFETs A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -4.0A, -200V • rDS on = ° - 8 0 fi SOURCE • Single Pulse Avalanche Energy Rated


    OCR Scan     		2N6851 -200V 2N6851 92CS-43314 00S4504 PDF

    smd diode B3E

    Abstract: LC7266 smd diode VA7
    Text: SANYO SEM IC ONDUCTOR CORP b3E T> TTTTDTb DD111&3 1 New Product * Under Development iwmBmmmmm TyDB to PLL t Suitable Control-er Package SyritMe • H B & b I M ost Suitable ‘-neouericv Disomy Control Ip fÉ LC7265 LC7267 DIP-42S DIP-42S LED • • LC7266


    OCR Scan     		DD111 LC7265 LC7267 DIP-42S LC7266 LC7268 7215FM smd diode B3E LC7266 smd diode VA7 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0053742 ÜJ HARRIS 4Tb ■ August 1991 HAS 2N 6769 2 N 6770 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors Package Features T O -2 0 4 A A • 11A and 12A, 450V - 500V BOTTOM VIEW • rQ3 |on = 0.5H and 0.40 • SOA is Power-Dissipation Limited


    OCR Scan     		43D2271 2N6769, 2N6770 PDF