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    DIODE AG Search Results

    DIODE AG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE AG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1gg5

    Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
    Text: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161


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    PDF HSCH-9161 HSCH-9161 HSCH-9161/rev 1gg5 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode

    AD502

    Abstract: No abstract text available
    Text: PIN DIODE MODULES PIN diode attenuators PIN DIODE ATTENUATORS Features PIN diode attenuators are primarily used in applications where control power level is needed i.e. in system like AGC (Automatic Gain Control . These attenuators are current-controlled and can be proposed in a wide


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    PDF 10GHz AD502: AD502

    BAS85

    Abstract: BAT85
    Text: BAS85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type


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    PDF BAS85 DO-35 BAT85. OD-80) 300us 100mA BAS85 BAT85

    BAT85

    Abstract: No abstract text available
    Text: BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type


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    PDF BAT85 BAS85. DO-35 300us, 100mA BAT85

    Untitled

    Abstract: No abstract text available
    Text: BAT85 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges ‹ This diode is also available in the MiniMELF case with type


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    PDF BAT85 BAS85. DO-35 300us, 100mA

    MINI-MELF DIODE green CATHODE

    Abstract: DIODE WITH SOD CASE green color ring diode DIODE 436
    Text: BAS85 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage. ‹ The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. ‹ This diode is also available in the DO-35 case with type


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    PDF BAS85 DO-35 BAT85. OD-80C) 300us 100mA MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE green color ring diode DIODE 436

    ADB 935

    Abstract: diode smd ed 49 smd diode code ED 5l marking ADB18PS diode jc 5l Diode smd code cm SGS-THOMSON SMD marking code ADB
    Text: ADB18PS  AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage : Caller Id Handset TAB 1 DESCRIPTION The ADB18PS combines a diode bridge and a


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    PDF ADB18PS ADB18PS ADB 935 diode smd ed 49 smd diode code ED 5l marking diode jc 5l Diode smd code cm SGS-THOMSON SMD marking code ADB

    BAT41

    Abstract: LL41
    Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


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    PDF BAT41 DO-35 100uA 100OC 200mA 300uS BAT41 LL41

    BAT46 sod80

    Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
    Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.


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    PDF DO-35 BAT46. OD-80) 100uA 300us, 250mA BAT46 sod80 BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE

    Untitled

    Abstract: No abstract text available
    Text: SMD Switching Diode SMD Diodes Specialist CDSNC4148 High Speed Features 1206 Designed for mounting on small surface. Silicon Epitaxial Planar Diode. 0.134 3.40 0.118(3.00) Fast switching diode. Use in sensitive electronics protection against voltage transients induced by inductive load


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    PDF CDSNC4148 QW-B0019

    cree Sic

    Abstract: schottky diode FIT 155C CSD04060 CSD06060 CSD10060
    Text: SiC Power Diode Reliability SiC Schottky Diode Reliability October 2008 September 2007 SiC Power Diode Reliability October 2008 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers four years ago


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    PDF CPWR-RS03, cree Sic schottky diode FIT 155C CSD04060 CSD06060 CSD10060

    Untitled

    Abstract: No abstract text available
    Text: BAT41 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


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    PDF BAT41 DO-35 100uA 100OC 200mA 300uS

    CSD06060A

    Abstract: cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio
    Text: SiC Power Diode Reliability SiC Schottky Diode Reliability September 2006 March 2006 SiC Power Diode Reliability September 2006 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers three years ago


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    PDF CPWR-RS03, CSD06060A cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio

    CDSNC4148

    Abstract: DIODE SMD 1206
    Text: SMD Switching Diode SMD Diodes Specialist CDSNC4148 High Speed Features 1206 Designed for mounting on small surface. Silicon Epitaxial Planar Diode. 0.134 3.40 0.118(3.00) Fast switching diode. Use in sensitive electronics protection against voltage transients induced by inductive load


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    PDF CDSNC4148 NC/1206 QW-B0019 CDSNC4148 DIODE SMD 1206

    1PS59SB20

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection


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    PDF M3D114 1PS59SB20 SC-59 MLC357 MSA314 SCA60 115104/00/01/pp8 1PS59SB20

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Arrays SPA Diodes Lightning Surge Protection - SP2574NUTG SP2574NUTG 2.5V 40A Diode Array RoHS Pb GREEN The SP2574NUTG is a low-capacitance, TVS Diode Array designed to provide protection against ESD (electrostatic discharge), CDE (cable discharge events), EFT (electrical fast


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    PDF SP2574NUTG SP2574NUTG IEC61000-4-5) IEC61000-4-2) DFN-10

    Untitled

    Abstract: No abstract text available
    Text: L L 46 Small-Signal Diode Schottky Diode Features ‹ For general purpose applications. ‹ This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.


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    PDF DO-35 BAT46. OD-80C) 100uA 300us, 250mA

    bat48 sod-80

    Abstract: BAT48 200MA diode SOD-80 MINI-MELF DIODE green CATHODE
    Text: L L 48 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


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    PDF DO-35 BAT48. OD-80) 100uA 300us, 200mA 500mA bat48 sod-80 BAT48 200MA diode SOD-80 MINI-MELF DIODE green CATHODE

    Cathode indicated by a grey band

    Abstract: BAS85
    Text: Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is • High breakdown voltage


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    PDF BAS85 Cathode indicated by a grey band BAS85

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product spscMcation Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is • High breakdown voltage


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    PDF BAS85 MRA540 MGC681

    BAS86

    Abstract: Philips Diode schottky mrc129
    Text: Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed


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    PDF BAS86 711Dfl2b BAS86 Philips Diode schottky mrc129

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Schottky barrier diode DESCRIPTION A Schottky barrier diode with an integrated protection ring against static discharges. This diode, in a SOD80C SMD envelope, is intended for applications where a very low forward voltage is required.


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    PDF OD80C BAS85 MRAS36 MRA538

    LD-3230

    Abstract: iei-1209
    Text: VISIBLE LASER DIODE NDL3230SU 30 mW, 685 nm VISIBLE LASER DIODE FOR HIGH DENSITY M AGNETIC OPTICAL DISK APPLICATIONS DESCRIPTION NDL3230 is an A IG alnP visible laser diode and especially developed for high density magnetic optical disk. Higher density than 780 nmLD.


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    PDF NDL3230SU NDL3230 IEI-1209) ID-3289 LD-3230) NDL3230 LD-3230 iei-1209

    620 tg diode

    Abstract: diode smd marking FZ Diode smd code sg SGS-THOMSON SMD diode smd ed 49 smd diode marking sG SMD MARKING CODE sg diode MARKING CODE sg Diode smd code FZ 660 tg diode
    Text: fZ T ^7# SGS-THOMSON ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION The ADB18PS combines a diode bridge and a


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    PDF ADB18PS ADB18PS 620 tg diode diode smd marking FZ Diode smd code sg SGS-THOMSON SMD diode smd ed 49 smd diode marking sG SMD MARKING CODE sg diode MARKING CODE sg Diode smd code FZ 660 tg diode