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    DIODE AR S1 52 Search Results

    DIODE AR S1 52 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE AR S1 52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Le57D11

    Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
    Text: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the


    Original     		PDF Le57D11 Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22

    Untitled

    Abstract: No abstract text available
    Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.


    Original     		PDF AO6602 AO6602 100m1 170m1

    AO6602

    Abstract: uis test
    Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.


    Original     		PDF AO6602 AO6602 uis test

    AO4629

    Abstract: No abstract text available
    Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4629 AO4629

    AO4629

    Abstract: a4751 20V P-Channel Power MOSFET 500A
    Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4629 AO4629 a4751 20V P-Channel Power MOSFET 500A

    Untitled

    Abstract: No abstract text available
    Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4629 AO4629 noted29

    AO4629L

    Abstract: No abstract text available
    Text: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		PDF AO4629L AO4629L

    EUPEC Thyristor T 1059

    Abstract: thyristor t 718 n thyristor T 218 N EUPEC Thyristor T 869 EUPEC t 1209 EUPEC Thyristor 1901 DIODE 4003 EUPEC T 1078 F EUPEC T 821 Emitter Turn-Off thyristor
    Text: . power the Home Products N-Thyristors News Contact Editorials Job Offers Company Search Site Content VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs the figures in the part-no. represent the current rating [A]


    Original     		PDF

    AO4803

    Abstract: diode AR s1 52
    Text: AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V


    Original     		PDF AO4803 AO4803 diode AR s1 52

    AO4803A

    Abstract: No abstract text available
    Text: AO4803A 30V General Description Dual P-Channel MOSFET Product Summary VDS The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V)


    Original     		PDF AO4803A AO4803A

    AO4803A

    Abstract: No abstract text available
    Text: AO4803A 30V Dual P-Channel MOSFET General Description Product Summary The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V


    Original     		PDF AO4803A AO4803A

    AO4830

    Abstract: No abstract text available
    Text: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A


    Original     		PDF AO4830 AO4830

    Untitled

    Abstract: No abstract text available
    Text: AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V


    Original     		PDF AO4803 AO4803

    ao4830

    Abstract: AO4830L
    Text: AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4830L uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4830L AO4830L ao4830

    AO6802

    Abstract: Qg (nC)
    Text: AO6802 30V Dual N-Channel MOSFET General Description Product Summary The AO6802 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V


    Original     		PDF AO6802 AO6802 Qg (nC)

    Qg (nC)

    Abstract: 70°C AO6810 diode AR S1 77 diode AR S1 70
    Text: AO6810 30V Dual N-Channel MOSFET General Description Product Summary The AO6810 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V


    Original     		PDF AO6810 AO6810 Qg (nC) 70°C diode AR S1 77 diode AR S1 70

    AOD609

    Abstract: aod609 datasheet
    Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


    Original     		PDF AOD609 AOD609 O-252-4L aod609 datasheet

    Untitled

    Abstract: No abstract text available
    Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


    Original     		PDF AOD609 AOD609 O-252-4L

    M8402

    Abstract: 041 DIODE
    Text: S T M8402 S amHop Microelectronics C orp. P reliminary May.26 2004 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V


    Original     		PDF M8402 M8402 041 DIODE

    M8306

    Abstract: HR ONS diode ar s1
    Text: S T M8306 Green Product S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) Max V DS S


    Original     		PDF M8306 M8306 HR ONS diode ar s1

    mar-06

    Abstract: STM8306 m8306 diode AR s1 52
    Text: S T M8306 S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A


    Original     		PDF M8306 mar-06 STM8306 m8306 diode AR s1 52

    Untitled

    Abstract: No abstract text available
    Text: S T M8500A S amHop Microelectronics C orp. J une,08 2006 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 55V 4.5A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V


    Original     		PDF M8500A

    AON7826

    Abstract: No abstract text available
    Text: AON7826 20V General Description Dual N-Channel MOSFET Product Summary The AON7826 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two low RDS ON MOSFETs in a dual DFN3x3 package. The AON7826 is


    Original     		PDF AON7826 AON7826

    C1C14

    Abstract: Motorola AR 164
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device


    OCR Scan     		PDF MRF5035 AN215A, C1C14 Motorola AR 164