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Abstract: No abstract text available
Text: S PY0016C SP S Sttep-Up DC/DC Converter Preliminary SEP. 20, 2001 Version 0.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable.
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SPY0016C
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Abstract: No abstract text available
Text: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6812
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Abstract: No abstract text available
Text: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6810
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Untitled
Abstract: No abstract text available
Text: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6810
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Untitled
Abstract: No abstract text available
Text: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6812
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diode AR S1 99
Abstract: S3 DIODE schottky 486 smps
Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient
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100N10S1
100N10S2
100N10S3
diode AR S1 99
S3 DIODE schottky
486 smps
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AO4606
Abstract: No abstract text available
Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of
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AO4606
AO4606
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AO4627
Abstract: No abstract text available
Text: AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4627
AO4627
unless4627
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Untitled
Abstract: No abstract text available
Text: AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6601
AO6601
115m1
150m1
200m1
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Abstract: No abstract text available
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
AO4616
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Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
AO6602
100m1
170m1
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Abstract: No abstract text available
Text: AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4627
AO4627
100m1
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otherwi4627
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AO6604
Abstract: No abstract text available
Text: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO6604
AO6604
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AO6602
Abstract: uis test
Text: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AO6602
AO6602
uis test
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Untitled
Abstract: No abstract text available
Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of
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AO4606
AO4606
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AO4629
Abstract: No abstract text available
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
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Untitled
Abstract: No abstract text available
Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of
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AO4606
AO4606
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AO4629
Abstract: a4751 20V P-Channel Power MOSFET 500A
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
a4751
20V P-Channel Power MOSFET 500A
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AO4606
Abstract: Complementary
Text: AO4606 30V Complementary MOSFET General Description Product Summary The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of
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AO4606
AO4606
Complementary
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AO4612
Abstract: Complementary diode AR s1 56
Text: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AO4612
AO4612
Complementary
diode AR s1 56
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AO4616
Abstract: 20V P-Channel Power MOSFET 500A
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
AO4616
20V P-Channel Power MOSFET 500A
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Abstract: No abstract text available
Text: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629
AO4629
noted29
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laser coupler 1.55um 3db
Abstract: F3 diode FU-82SDM-F1 s1cw
Text: • b 2 4 ^ a 2 *ì 0 0 1 f l 3 b fl OOT ■ MITSUBISHI OPTICALDEVICES FU-82SDM-F1/S1/F3/S3 _ WDMMODULE WITH SINGLEMODE FIBER PIGTAIL (1.55 um LD AND 1.3 um PD) DESCRIPTION WDM module FEATURES FU-82SDM series incorporate a • Incorporate a 1.55um laser, an InGaAs photodiode
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0ai83ba
FU-82SDM-F1/S1/F3/S3
FU-82SDM
55urn
10-log-â
laser coupler 1.55um 3db
F3 diode
FU-82SDM-F1
s1cw
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Nippon capacitors
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Order this document by HC705C5TSAD/D Rev. 1 MC68HC705C5 Addendum to MC68HC705C5 8-Bit Microcontroller Unit Technical Summary This addendum supplements the M C 68H C 705C 5 Technical Summ ary with additional information
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HC705C5TSAD/D
MC68HC705C5
1ATX30242-2
HC705C5TSAD/D
Nippon capacitors
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