AO4838
Abstract: No abstract text available
Text: AO4838 30V Dual N-Channel MOSFET General Description Product Summary The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO4838
AO4838
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sdm8401
Abstract: DM8401
Text: S DM8401 S amHop Microelectronics C orp. Augus t , 2002 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) TYP R DS (ON) ( m W ) V DS S
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DM8401
sdm8401
DM8401
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STM8405
Abstract: diode AR s1 56 diode AR S1 86 diode AR s1 8N
Text: S T M8405 S amHop Microelectronics C orp. Nov.23, 2004 ver 1.4 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A
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M8405
STM8405
diode AR s1 56
diode AR S1 86
diode AR s1 8N
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diode AR S1 86
Abstract: EQUIVALENT STM8405 STM8405 M8405 diode AR s1 56
Text: S T M8405 S amHop Microelectronics C orp. MAY .04,2006 ver 1.5 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A
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M8405
diode AR S1 86
EQUIVALENT STM8405
STM8405
M8405
diode AR s1 56
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Untitled
Abstract: No abstract text available
Text: S DM8401 S amHop Microelectronics C orp. J uly 23, 2004 ver1.2 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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DM8401
SDM8401
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AOD603A
Abstract: No abstract text available
Text: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD603A
AOD603A
O252-4L
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Untitled
Abstract: No abstract text available
Text: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD603A
AOD603A
115m1
150m1
88889ABC
11/D2
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AN7421
Abstract: AN-742 C1996 DS3875 DS3883A DS3884A DS3885 DS3886A diode AR S1 86 transistor ab2 12
Text: National Semiconductor Application Note 742 Chai Vaidya IPG Applications January 1991 INTRODUCTION Today’s digital systems with their higher clock speeds and data throughput must have higher transfer rates to keep the processors running at top speed With these types of circuits it is essential to have high performance bus transceivers which tie together everything on the bus Without specialized bus interface transceivers board designers must
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AO4619
Abstract: IF6 MOSFET
Text: AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard
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AO4619
AO4619
IF6 MOSFET
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AO4619
Abstract: No abstract text available
Text: AO4619 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4619/L uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. AO4619
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AO4619
AO4619/L
AO4619L
-AO4619L
AO4619
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ao4914
Abstract: No abstract text available
Text: AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous
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AO4914
AO4914
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Untitled
Abstract: No abstract text available
Text: AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4916 uses advanced trench technology to provide Q1 N-Channel excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous
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AO4916
AO4916
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tr1pbf
Abstract: No abstract text available
Text: PD - 97315A IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters
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7315A
IRF6720S2TRPbF
IRF6720S2TR1PbF
AN1035
tr1pbf
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Untitled
Abstract: No abstract text available
Text: PD - 97315B IRF6720S2TRPbF IRF6720S2TR1PbF DirectFET Power MOSFET l RoHS Compliant and Halogen Free Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS l Dual Sided Cooling Compatible VGS RDS(on) RDS(on) l Ultra Low Package Inductance
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97315B
IRF6720S2TRPbF
IRF6720S2TR1PbF
AN1035
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Untitled
Abstract: No abstract text available
Text: PD - 97315B IRF6720S2TRPbF IRF6720S2TR1PbF DirectFET Power MOSFET l RoHS Compliant and Halogen Free Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS l Dual Sided Cooling Compatible VGS RDS(on) RDS(on) l Ultra Low Package Inductance
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97315B
IRF6720S2TRPbF
IRF6720S2TR1PbF
AN1035
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transistor b528
Abstract: M68HC11 M68HC12 M68HC12A4EVB MC68HC12 MC68HC812A4 F26FB mdw 45 mc68hc908 32 dip pin assignment
Text: Freescale Semiconductor, Inc. M68HC12A4EVBUM/D October 1999 Freescale Semiconductor, Inc. M68HC12A4EVB EVALUATION BOARD OR, USER’S MANUAL UCT CH R A ED V I BY EE R F LE A SC S N O IC M E D For More Information On This Product, Go to: www.freescale.com
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M68HC12A4EVBUM/D
M68HC12A4EVB
transistor b528
M68HC11
M68HC12
M68HC12A4EVB
MC68HC12
MC68HC812A4
F26FB
mdw 45
mc68hc908 32 dip pin assignment
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4741d
Abstract: MIC342 BC177 BC556 SD103A T4090B-PC U4090B-P U4090B-PFNG3Y 474-1D VMPC7
Text: Features • DC Characteristic Adjustable • Transmit and Receive Gain Adjustable • Symmetrical Input of Microphone Amplifier • Anti-clipping in Transmit Direction • Automatic Line-loss Compensation • Symmetrical Output of Earpiece Amplifier • Built-in Ear Protection
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4741D
MIC342
BC177
BC556
SD103A
T4090B-PC
U4090B-P
U4090B-PFNG3Y
474-1D
VMPC7
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sick weu 26-710
Abstract: WEU 26-730 pnoz 8 SAFETY AT 1 11 SICK OPTIC ELECTRONIC PILZ pnoz x11 26732 SICK D-79183 ka 2131 sick optic old to new sick
Text: T E C H N I C A L D E S C R I P T I O N WSU 26/2 – WEU 26/2 Photoelectric Safety Switch ‡ EASY INSTALLATION † ‡ UNIVERSAL USABILITY† ‡ SOLID CONSTRUCTION † SICK WSU 26/2 – WEU 26/2 Contents 1 General Introduction 2 Device/System Construction
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Mounti58-13
D-79177
sick weu 26-710
WEU 26-730
pnoz 8
SAFETY AT 1 11 SICK OPTIC ELECTRONIC
PILZ pnoz x11
26732
SICK D-79183
ka 2131
sick optic
old to new sick
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5L155
Abstract: No abstract text available
Text: SN55ALS056, SN55ALS057 TRAPEZOIDAL WAVEFORM INTERFACE BUS TRANSCEIVERS _ D 327S . APRIL 1 9 6 9 SUITABLE FOR IEEE STANDARD 8 9 6 APPLICATIONS* • S N 55A L S 05 6 Is an Octal Transceiver S N 55ALS0S6 . . J OR W PACKAGE TOP V IE W • S N 55A L S 05 7 Is a Quad Transceiver
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SN55ALS056,
SN55ALS057
55ALS0S6
5L155
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diode marking c34
Abstract: IRF4905L IRF4905S
Text: PD- 9.1478A International IQ R Rectifier IRF4905S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF4905S Low-profile through-hole (IRF4905L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -55V RüS(on) = 0.02Q
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IRF4905S)
IRF4905L)
IRF4905S/L
diode marking c34
IRF4905L
IRF4905S
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Untitled
Abstract: No abstract text available
Text: f Z 7 S G S -T H O M S O N Ä 7 # 5 aJOT ßDD gt M74HC181 ARITHMETIC LOGIC UNIT/FUNCTION GENERATOR • HIGH SPEED tP D = 13 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 4 (jA (MAX.) at TA = 25 "C ■ HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.)
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M74HC181
54/74LS181
74HC181M
74HC181B1R
74HC181
S-10041
GDS4703
c32tiE37
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tl 494 convertor
Abstract: TDA1545A
Text: P h ilip s S e m ic o n d u c to r s L in e a r P ro d u c ts P r e lim in a r y s p e c ific a tio n Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package SOS or DIL8 The TDA1545A is the first device of a new generation of
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16-bit
71106Eb
QD7C51S7
tl 494 convertor
TDA1545A
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FEI Microwave
Abstract: step recovery diode step recovery diode application A4S112 "step recovery diode" 1.7 pf A4S021 fei microwave diodes A4S180 A4S360 A4S370
Text: FREQUENCY E L E K S / F E I Hlil 13E D | 3731M5ti □ Q 0 0 0 S C1 û I Step necovery Diodes Step Recovery Diode Product Information S te p re cove ry d io d e s are ge n e rally used fo r fre q u e n c y m u ltip lic a tio n in phase locked loops, local
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3731MSb
125psecTYP.
FEI Microwave
step recovery diode
step recovery diode application
A4S112
"step recovery diode" 1.7 pf
A4S021
fei microwave diodes
A4S180
A4S360
A4S370
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UFN 432
Abstract: 74AHCT
Text: Zvtrex ZX54AHCT ZX74AHCT OBJECTIVE SPECIFICATIONS Features Description • Multiplexed I/O ports provides improved bit density These eight-bit universal registers feature multiplexed I/O ports to achieve full eight-bit data handling. Two function-select inputs and two output-control Inputs can
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ZX54AHCT
ZX74AHCT
54/74ALS
UFN 432
74AHCT
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