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    DIODE ARS Search Results

    DIODE ARS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ARS Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265FAA OP265 OP505 OP535

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP266FAA OP266

    OP266

    Abstract: OP506 OP535 OP266FAD OP266F
    Text: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP266FAA OP266 OP506 OP535 OP266FAD OP266F

    OP265

    Abstract: OP265AA OP265AB OP265AC OP265AD OP505 OP535
    Text: Plastic Infrared Emitting Diode OP265AA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265AA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265AA OP265 OP505 OP535 OP265AB OP265AC OP265AD

    OP265FAD

    Abstract: GaAs 850 nm Infrared Emitting Diode OP265 OP505 OP535 OP265FAA OP265F
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


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    PDF OP265FAA OP265 OP505 OP530 OP265FAD GaAs 850 nm Infrared Emitting Diode OP535 OP265F

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


    Original
    PDF OP265FAA OP265 OP505 OP535

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


    Original
    PDF OP265FAA OP265 OP505 OP535

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is


    Original
    PDF OP265FAA OP265 OP505 OP535

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP266AA SERIES Features: • T-1 3 mm package style  Narrow irradiance pattern  Dome lens  Higher power output than GaAs at equivalent drive currents  850 nm diode Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs)


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    PDF OP266AA

    C10535E

    Abstract: MEI-1202 NDL7001 NDL7001L NDL7401P NDL7408P
    Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.


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    PDF NDL7001 NDL7001 C10535E MEI-1202 NDL7001L NDL7401P NDL7408P

    11-5B2

    Abstract: E67349 TLP722 TLP722F VDE0884
    Text: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722 : Single circuit 30 V (max) Cathode-Anode Voltage


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    PDF TLP722 TLP722 UL1577, E67349 VDE0884 VDE0884 EN60950, 11-5B2 E67349 TLP722F

    TLP590

    Abstract: No abstract text available
    Text: i GaAs IRED & PHOTO-DIODE ARRAY TELECOMMUNICATION TLP590 TENTATIVE DATA PROGRAMMABLE CONTROLLERS. MOS GATE DRIVER MOS FET GATE DRIVER The TOSHIBA TLP590 consists of a galium arsenide infrared emitting diode optically coupled to a series connected photo-diode array in a six lead plastic DIP


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    PDF TLP590 TLP590

    SE301A

    Abstract: 30mWI
    Text: N E C 30E D ELECTRONICS INC • h42752S 005=^44 fi ■ LIGHT EMITTING DIODE SE301A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header


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    PDF h42752S SE301A SE301A 940nm, T-41-11 ta-259c) AM81ENT 30mWI

    11-5B2

    Abstract: E67349 TLP722 TLP722F VDE0884
    Text: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . 4 3 5LJZ JJ lU TLP722 : Single circuit


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    PDF TLP722 TLP722 UL1577, E67349 VDE0884 VDE0884 EN60950, 11-5B2 E67349 TLP722F

    varactor diode notes

    Abstract: varactor diode high frequency x band varactor diode "Varactor Diode" CAY10 Parametric Varactor diodes
    Text: GALLIUM ARSENIDE VARACTOR DIODE 125 150 Tstud CO CAYIO TOTAL DISSIPATION PLOTTED AGAINST STUD TEMPERATURE ffr. tm r e ì CAYIO Page C I GALLIUM ARSENIDE VARACTOR DIODE CAYIO TEN TA TIV E DATA Gallium arsenide varactor diode with a high cut-off frequency for use in


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    PDF CAY10 varactor diode notes varactor diode high frequency x band varactor diode "Varactor Diode" Parametric Varactor diodes

    Untitled

    Abstract: No abstract text available
    Text: NEC LIGHT EM ITTING EifCTROfJ DCVICE DIODE SE302A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE -N E P O C SERIES - DESCRIPTION The SE302A is a GaAs G allium Arsenide Infrared Lig h t E m ittin g Diode w hich is m ounted on the lead fram e and m olded in


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    PDF SE302A SE302A

    CVD-450

    Abstract: Laser Diode 808 nm
    Text: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse­ nide Monolithic Quantum Well Arrays made by MOCVD


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    PDF VD-400 CVD-400 CVD-450 Laser Diode 808 nm

    SE310

    Abstract: PH110
    Text: NEC ELECTRONICS INC 3QE D • 1=427525 0 0 2 ‘iû5b M ■ /> T -tl-ll LIGHT EMITTING DIODE SE310 GaAs INFRARED E M IT T IN G DIODE DESCRIPTION The SE310 is a GaAs Gallium Arsenide Infrared Em itting Diode which is mounted on the lead frames and molded in plastic.


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    PDF SE310 SE310 PH110 fcj4E7555 T-41-11 PH110

    SE308T

    Abstract: No abstract text available
    Text: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE308-T GaAs INFRARED EMITTING DIODE -N E P O C SERIES— D ESCRIPTIO N The SE308 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lud frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.


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    PDF SE308-T SE308 PH108. J22686 SE308T

    ASI15

    Abstract: No abstract text available
    Text: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE S E 307-C GaAs INFRARED EMITTING DIODE -N EP O C SERIES— DESCRIPTION The SE307-C is a GaAs Gallium Arsenide Infrared Emitting Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 9 4 0 nm.


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    PDF 307-C SE307-C SE303ANCRF-C: ASI15

    PH201A

    Abstract: photo diode circuit
    Text: NEC PHOTO DIODE ELECTRON DEVICE PH201A PHOTO DETECTOR GaAsP PHOTE DIODE -N E P O C S E R IE S - DESCRIPTION The PH201A is a GaAsP gallium arsenide phosphide photo diode designed for use as a photo detector o f electronic camera. It features wide active area, close spectral response to that o f human eye and wide light current range.


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    PDF PH201A PH201A IQ-14 photo diode circuit

    SE303A-C

    Abstract: No abstract text available
    Text: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE303A-C GaAs INFRARED EMITTING DIODE -N E P O C SERIES - DESCRIPTION The SE303A-C is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lead frames and molded in plastic. On forw ard bias, i t emits a spectrally narrow band of radiation peaking ax 940 nm.


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    PDF SE303A-C SE303A-C

    se3-13

    Abstract: No abstract text available
    Text: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.


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    PDF SE313 SE313 se3-13

    optointerrupter

    Abstract: No abstract text available
    Text: Optointerrupter Specifications _ H22B1, H22B2, H22B3 Optointerrupter GaAs Infrared Emitting Diode andNPN Sfllcon Photo-Darlington Module with 1mm Aperture T he H22B Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon Darlington-connected


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    PDF H22B1, H22B2, H22B3 optointerrupter