E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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Original
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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PDF
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QCA200AA120
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200AA120 UL;E76102 （M） QCA200AA120 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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Original
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QCA200AA120
E76102
QCA200AA120
113max
Tab110
31max.
90max.
200sec100msec
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PDF
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Diode B2x
Abstract: QCA200AA100
Text: TRANSISTOR MODULE QCA200AA100 UL;E76102 （M） QCA200AA100 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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Original
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QCA200AA100
E76102
QCA200AA100
113max
90max.
Tab110
200ec100msec
Diode B2x
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PDF
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QCA200AA100
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA200AA100 UL;E76102 （M） QCA200AA100 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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Original
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QCA200AA100
E76102
QCA200AA100
113max
90max.
Tab110
200ec100msec
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PDF
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QCA200AA120
Abstract: C1527
Text: TRANSISTOR MODULE QCA200AA120 UL;E76102 （M） QCA200AA120 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from
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Original
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QCA200AA120
E76102
QCA200AA120
113max
Tab110
31max.
90max.
200sec100msec
C1527
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PDF
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Untitled
Abstract: No abstract text available
Text: MBRS230L – MBRS2100L 2.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Very Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak
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Original
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MBRS230L
MBRS2100L
SMB/DO-214AA,
MIL-STD-750,
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PDF
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QCA300BA60
Abstract: 675g M6 transistor
Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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Original
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QCA300BA60
E76102
QCA300BA60
trr200ns)
113max
IC300A,
VCEX600V
hFE750
Ic300A
675g
M6 transistor
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PDF
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IC-100A
Abstract: QCA100BA60 hFE-750
Text: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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Original
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QCA100BA60
E76102
QCA100BA60
trr200ns)
95max
110Tab
50msec50sec
100sec50msec
IC-100A
hFE-750
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PDF
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QCA150BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） QCA150BA60 UL;E76102 （M） QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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Original
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QCA150BA60
E76102
QCA150BA60
trr200ns)
95max
110Tab
50msec50sec
100sec50msec
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PDF
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QCA100BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） QCA100BA60 UL;E76102 （M） QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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Original
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QCA100BA60
E76102
QCA100BA60
trr200ns)
95max
110Tab
50msec50sec
100sec50msec
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PDF
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QCA150BA60
Abstract: FB370
Text: TRANSISTOR MODULE（Hi-β） QCA150BA60 UL;E76102 （M） QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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Original
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QCA150BA60
E76102
QCA150BA60
trr200ns)
95max
110Tab
50msec50sec
100sec50msec
FB370
|
PDF
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QCA300BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is
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Original
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QCA300BA60
E76102
QCA300BA60
trr200ns)
113max
IC300A,
VCEX600V
hFE750
Ic300A
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PDF
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QCA200A60
Abstract: OCA200 QCA200A40 AMP110 QCA200A-60
Text: TRANSISTOR MODULE QCA200A40/60 UL;E76102 （M） 108max 93±0.5 E2 B2 E2 B1X E1 B1 25.0 E2 B2X B2 C2E1 25.0 14.0 B1 C1 3-M6 L=10max AMP110 t=0.5 30.0max 33.0max 24.0max （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
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Original
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QCA200A40/60
E76102
108max
10max
AMP110
IC200AVCEX400/600V
QCA200
OCA200
QCA200A60
OCA200
QCA200A40
AMP110
QCA200A-60
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PDF
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QCA200A60
Abstract: OCA200 QCA200A40 AMP110
Text: TRANSISTOR MODULE QCA200A40/60 UL;E76102 （M） 108max 93±0.5 E2 B2 E2 B1X E1 B1 25.0 E2 B2X B2 C2E1 25.0 14.0 B1 C1 3-M6 L=10max AMP110 t=0.5 30.0max 33.0max 24.0max （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
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Original
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QCA200A40/60
E76102
108max
10max
AMP110
IC200AVCEX400/600V
QCA200
OCA200
QCA200A60
OCA200
QCA200A40
AMP110
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PDF
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|
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diode b2
Abstract: TRANSISTOR 158 QBB150A40 QBB150A60 QCA150A QCA150A40 QCA150A60
Text: TRANSISTOR MODULE QCA150A/QBB150A40/60 UL;E76102 （M） 10.5 B2X B2 C2E1 NAME PLATE 5.0 E2 B1 C1 25.5 26.5 33.5max 4-φ5.4 QBB E2 40.0 52.0±0.2 68.0max B2 （1.5） 3.4 E2 E1 C2 B1 21 30max QCA （Applications） Motor Control（VVVF） , AC/DC Servo, UPS,
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Original
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QCA150A/QBB150A40/60
E76102
30max
110Tab
62max
QCA150A.
QBB150A.
IC150A,
VCEX400/600V
diode b2
TRANSISTOR 158
QBB150A40
QBB150A60
QCA150A
QCA150A40
QCA150A60
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PDF
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IKCS17F60B2A
Abstract: b2xseries IKCS22F60B2C IKCS22F60F2C DIODE b2x IKCS22F60F2A IKCS08F60F2A IKCS08F60F2C IKCS12F60F2A IKCS17F60
Text: Application Note, V1.2, Nov. 2008 AN-Cipos-5 Control integrated Power System CIPOS Application Aspects of CIPOS™ B2x- and F2x-series CIPOS™ Authors: Wolfgang Frank http://www.infineon.com/cipos Power Management & Drives Control integrated Power System CIPOS™
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ZLDQ250A
Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
Text: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513
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Original
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pinwei0225
ZLDQ250A
pwm INVERTER welder
ZQ25A
zldq150a
ZQ50A
st600c
ZQ35A
diode m3
3phase bridge diode mds 60
SKE200A
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PDF
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B2X84C5V1
Abstract: B2X84C4V3 zener diode Marking code v3 Zener diode wz 210 BZX64 diode ZENER Y6 marking BZX64C3V0 Y6 ZENER DIODE Zener diode wz 130 BZX84C47
Text: Central" BZX84C2V4 THRU BZX84C47 Semiconductor Corp. 350mW ZENER DIODE 2.4 VOLTS THRU 47 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR BZX84C2V4 Series Silicon Zener Diode is a high quality volt age regulator for use in industrial, commercial, entertainment and computer applications.
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OCR Scan
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BZX84C2V4
BZX84C47
350mW
OT-23
BZX84C2V7
BZX64C3V0
BZX84C3V3
BZX84C3V6
B2X84C5V1
B2X84C4V3
zener diode Marking code v3
Zener diode wz 210
BZX64
diode ZENER Y6 marking
Y6 ZENER DIODE
Zener diode wz 130
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PDF
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Q62702-Z686
Abstract: z682 Z848 z688 bzx c36 Q62702-Z683 Q62702-Z851 Q62702-Z693 z850 Q62702-Z692
Text: BZX55 Silicon planar Z-Diode BZX 55 is a silicon planar Z -d io d e in a glass-case 51 A 2 DIN 418 8 0 D O -7 , for stabilizing and lim itin g voltages as w e ll as fo r generating reference voltages at low pow er requirements. The planar technique ensures a very lo w reverse current level,
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OCR Scan
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BZX55
BZX55
Q62702-Z686
z682
Z848
z688
bzx c36
Q62702-Z683
Q62702-Z851
Q62702-Z693
z850
Q62702-Z692
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PDF
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30H2DM1/ MG30H2YM1 H IG H POWER SW ITCHING A P P L I C A T I O N S . MOTOR CONTROL A P P L I C A T I O N S . • The Drain is Isolated from Case. • 2 MOS FETs are Built-in to 1 Package. • With Built-in Free Wheeling Diode.:
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OCR Scan
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MG30H2DM1/
MG30H2YM1
MG30H2DM1
0-12ys
205fl
MG30H2YM1
/MG30H2
MG30H2DM1/MG30H2YM1
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PDF
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B2X55C
Abstract: B2X55 B2X55-C10 BZX55C4 BZX55C13
Text: Zener Diodes BZX55 Series 500 mW Zener Diodes DO-35 Glass Package TA = 25 °C Type BZX55-C0V8) BZX55-C2V7 BZX55-C3V0 BZX55-C3V3 BZX55-C3V6 BZX55-C3V9 BZX55-C4V3 BZX55-C4V7 BZX55-C5V1 BZX55-C5V6 BZX55-C6V2 BZX55-C6V8 BZX55-C7V5 BZX55-C8V2 BZX55-C9V1 B2X55-C10
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OCR Scan
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BZX55
DO-35
BZX55-C0V8)
BZX55-C2V7
BZX55-C3V0
BZX55-C3V3
BZX55-C3V6
BZX55-C3V9
BZX55-C4V3
BZX55-C4V7
B2X55C
B2X55
B2X55-C10
BZX55C4
BZX55C13
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PDF
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C5VI ezx79
Abstract: C9VI C7V6 bs9305n041 zener c7v6 C5VI BS9305 BZX79 BZY88 0B8 diode zener
Text: Silicon voltage regulator diodes low pow er book 1 part 3 400mW Tamb= so°c ± 5%voltage tolerance. Outline DO-35 Drawing reference H Measured at Test I Max. Voltage <V> Typ. Temp. Coefficient (mV/°C) Test lz (m A) Max I r at V r (V» Type No. B2X79 Nom. Zener
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OCR Scan
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400mW
DO-35
BZX79
h--22->
crt6-25
C5VI ezx79
C9VI
C7V6
bs9305n041
zener c7v6
C5VI
BS9305
BZY88
0B8 diode zener
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PDF
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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OCR Scan
|
LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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PDF
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transistor eb 2030
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB lc Collector current. 200A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type
|
OCR Scan
|
QM200DY-HB
E80276
E80271
transistor eb 2030
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PDF
|
