Untitled
Abstract: No abstract text available
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
et-01
ERB32
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diode b32
Abstract: ERB32 marking B32 diode
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
diode b32
ERB32
marking B32 diode
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B3202
Abstract: diode b32 ERB32 marking code 12A DIODE b32 01 Diode marking code b32
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
ERB32
B3202
diode b32
marking code 12A
DIODE b32 01
Diode marking code b32
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U30100
Abstract: B3202 diode b32 ERB32 b32 diode Diode marking code b32 DIODE b32 01
Text: ERB32 1.2A ( 100 to 200V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø0.8 7.5 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability B32 02 Abridged type name Voltage class Applications
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ERB32
ERB32
U30100
B3202
diode b32
b32 diode
Diode marking code b32
DIODE b32 01
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diode B61
Abstract: b84 diode SO56-2 diode b81 diode b84 b71 DIODE b81 diode B7414 DIODE B82 diode b83
Text: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to
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IDT54/74FCT162344AT/CT/ET
FCT162344AT/CT/ET
MIL-STD-883,
SO56-1)
SO56-2)
SO56-3)
E56-1)
162344AT
diode B61
b84 diode
SO56-2
diode b81
diode b84
b71 DIODE
b81 diode
B7414
DIODE B82
diode b83
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diode b81
Abstract: diode B61 diode b84 DIODE B82 b84 diode DIODE B34 diode b73 SO56-2
Text: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to
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IDT54/74FCT162344AT/CT/ET
FCT162344AT/CT/ET
MIL-STD-883,
SO56-1)
SO56-2)
SO56-3)
E56-1)
162344AT
diode b81
diode B61
diode b84
DIODE B82
b84 diode
DIODE B34
diode b73
SO56-2
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DIODE B82
Abstract: DIODE B34 DIODE B44 B14 DIODE b34 diode SO56-2 diode b83 B82 diode diode b81
Text: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to
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IDT54/74FCT162344AT/CT/ET
FCT162344AT/CT/ET
MIL-STD-883,
SO56-1)
SO56-2)
E56-1)
162344AT
162344CT
DIODE B82
DIODE B34
DIODE B44
B14 DIODE
b34 diode
SO56-2
diode b83
B82 diode
diode b81
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marking B32 diode SCHOTTKY
Abstract: marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32
Text: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS320T3,
MBRS330T3,
MBRS340T3
marking B32 diode SCHOTTKY
marking B34 diode SCHOTTKY
MBRS340T3G
b34 diodes on semiconductor
marking B33 diode
b34 DIODE schottky
marking B3X
Diode 145 B34
marking B32
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capacitor 100nf monoblock
Abstract: pdp data driver pdp driver A52A2 STV7699 DIODE A34 CM17699 OUT48 AN 17380 IL-FHR-50S-HF
Text: CM17699 COLOR PDP DRIVER MODULE PRODUCT PREVIEW CM17699 MAIN FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 CM17699 CONNECTORS DEFINITION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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CM17699
CM17699
capacitor 100nf monoblock
pdp data driver
pdp driver
A52A2
STV7699
DIODE A34
OUT48
AN 17380
IL-FHR-50S-HF
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DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS300R17KE3
CBB32
CBB326
223DB
2313BCBC
A3265C
C14BC
DIODE C06-15
DIODE C06 15
DIODE C06-13
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ON B34
Abstract: DIODE B82 DIODE B34 diode b84 max 3249 DIODE B44 74FCT163344 b84 diode DATASHEET B34 DIODE B23
Text: 3.3V CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT163344/A/C ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • Typical tSK o (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
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IDT54/74FCT163344/A/C
250ps
MIL-STD-883,
200pF,
SO56-1)
SO56-2)
E56-1)
ON B34
DIODE B82
DIODE B34
diode b84
max 3249
DIODE B44
74FCT163344
b84 diode
DATASHEET B34
DIODE B23
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U820 diode
Abstract: u860 diode U840 diode U815 diode NFM61R30T472 diode U860 diode u880 diode u820 PLD-10 diode U815
Text: FLEX 10K PCI Prototype Board February 1998, ver. 1 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ General Description f Functional Description Altera Corporation A-DS-PCIDEMO-01 Peripheral component interconnect PCI standard form factor expansion card
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-DS-PCIDEMO-01
EPF10K30RC240-3
U820 diode
u860 diode
U840 diode
U815 diode
NFM61R30T472
diode U860
diode u880
diode u820
PLD-10
diode U815
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FQFP48
Abstract: SFECS10M7FA00-R0 1P2T SWITCH 06035A101FAT2A 4468 8 pin SOIC DB9 omron MAX3232 smd data sheet Omron MCU W934 MSP430
Text: TRF6903 With MSP430 Demonstration and Development Evaluation Kit User’s Guide 2004 Mixed Signal RF SWRU008 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TRF6903
MSP430
SWRU008
MSP430
868-MHZ
SWRA040)
FQFP48
SFECS10M7FA00-R0
1P2T SWITCH
06035A101FAT2A
4468 8 pin SOIC
DB9 omron
MAX3232 smd data sheet
Omron MCU
W934
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T0254AA
Abstract: No abstract text available
Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low
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T0254AA
SM2F151*
SM2F351*
SM2F251*
SM2F451*
T0254AA
T0258AA
FT0258AA
HDS100
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BUK482-100A
Abstract: transistor 431 N FR4 epoxy
Text: N AUER P H I L I P S / D I S C R E T E b'lE » • bbSB'IBl 0030733 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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bb53tÃ
BUK482-100A
OT223
bbS3T31
DD3D736
OT223.
BUK482-100A
transistor 431 N
FR4 epoxy
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Untitled
Abstract: No abstract text available
Text: International [bk]Rectifier PD-9.1352 IRF530NS PRELIMINARY H E X F E # Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V 'DS on = 0.11Q
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IRF530NS
0023b34
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PDF
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Untitled
Abstract: No abstract text available
Text: « PD - 9.1378A International IOR Rectifier IRLI2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated
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IRLI2203N
6598C
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PDF
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Untitled
Abstract: No abstract text available
Text: MODULES SSE 3 m 4551030 üül5 ^ H O NE YW EL L b32 • H0N1 Honeywell INC/ MICRO ~T~-V - 91 TRANSMITTER The H F M 2 0 1 0 and H F M 2 0 2 5 transmitter modules are designed to provide a tri-level 50% duty cycle optical output. With data formats compatible with Manchester encoded as well as NR Z. The H F M 20 10 , H F M 20 25 and H F M 21 10 allow the user to
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10Mbps.
HFM2010
HFM2025
HFM2110
HFM1010
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C2241
Abstract: HFM1010 7C127 c2431
Text: MODULES SSE » " 4S51fi3D D015b2R HO N E Y W E L L b32 « H O N l H O Iie V W e ll INC/ MICRO TRA N SM ITTER - r - Yt - 91 The H F M 20 10 and H F M 2 0 2 5 transmitter modules are designed to provide a tri-level 50% duty cycle optical output. With data formats compatible with M anchester encoded as well as N R Z. The H F M 20 10 , H F M 20 25 and H F M 21 10 allow the user to
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4S51fi3G
D015b2R
HFM2010
HFM2025
HFM2010,
HFM2110
C2241
HFM1010
7C127
c2431
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PDF
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DIODE MOTOROLA B34
Abstract: DIODE MOTOROLA B33
Text: M O T O R O L A SC DIODES/OPTO 3TE D S3 b3b?2SS 0aa30sfl S ESM0T7 Order this data sheet by MBRS320T3/D MOTOROLA C 3 S ilS ¥ ilC 0 i\1 0 y C T O ^ r ; _ TECHNICAL DATA T '0 % - \ S C S u rfa c e ¡¥3 iosit S c S io itk y P o w e r ¡R©ct5fo@rs
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0aa30sfl
MBRS320T3/D
BRS320T3
BRS330T3
MBRS340T3
DIODE MOTOROLA B34
DIODE MOTOROLA B33
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MTP30N06el
Abstract: 30N06E 30N06EL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP 30N 06E L Logic Level TMOS L2TMOS E-FET™ Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced E-FET is an L^TMOS power MOSFET designed to withstand high energy in the avalanche and commutation
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b3b7P54
MTP30N06EL
MTP30N06el
30N06E
30N06EL
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Untitled
Abstract: No abstract text available
Text: 2UALITY SEMICONDUCTOR INC bSE D • 74bb003 0001354 ûbT QSFCT16373T, QSFCT162373T Advanced Information Q S 74F C T16373T High Speed CMOS 16-Bit Latches Q Q S 74F C T162373T FEATURES/BENEFITS • 16-bit Function compatible to the 74F373 74FCT373 and 74FCT373T
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74bb003
QSFCT16373T,
QSFCT162373T
16-Bit
T16373T
T162373T
74F373
74FCT373
74FCT373T
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Untitled
Abstract: No abstract text available
Text: 11dt U n te g ia ted D FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET /ize T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • • • • • The FC T162344AT/C T/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This high
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IDT54/74FCT162344AT/CT/ET
T162344AT/C
MIL-STD-883,
S056-2)
S056-3)
E56-1)
162344AT
162344CT
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PDF
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DIODE MOTOROLA B34
Abstract: DIODE MOTOROLA B33 diode schottky B34 1S91
Text: Order this data shwrt by MBRS320T3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS320T3 MBRS330T3 MBRS340T3 Su rface M o u n t Sc h o ttk y Pow er Rectifiers . em ploying the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and
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MBRS320T3/D
86036EUROPE:
MSRS320T3/0
DIODE MOTOROLA B34
DIODE MOTOROLA B33
diode schottky B34
1S91
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