LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
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IFS75B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
327C53
1231423567896AB
LTC4098-3.6
se666
k3332
edt0145.6
SEH-01T-P0.6
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SPC4077
Abstract: 84N1161 LM7805 100mA tm162aaa6-2 84N1161 jack SPC4077 datasheet motorola lm7805 newark U3 LM7805 5v regulator 1n4148 0805
Text: Bill of Materials Qty Value Description Label 7 5 1 1uF .1uF .01uF Electrolytic Capacitor Capacitor 0805 Capacitor (0805) C1, C2, C9, C10, C11, C12, C13 C3, C5, C6, C7, C8 C4 1 1 1N4148 Red Switching Diode 1n4148 Red LED (1206) D1 DS1 1 1 1 1 LM7805 MMA1220
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1N4148
LM7805
MMA1220
MMA1260
MAX232
100mA)
MON08
44N8882
SPC4077
84N1161
LM7805 100mA
tm162aaa6-2
84N1161 jack
SPC4077 datasheet
motorola lm7805
newark
U3 LM7805 5v regulator
1n4148 0805
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BAS86
Abstract: Philips Diode schottky mrc129
Text: Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed
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BAS86
711Dfl2b
BAS86
Philips Diode schottky
mrc129
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MMAD130
Abstract: MMAD1103 MMAD1107 MONOLITHIC DIODE ARRAYS MMAD1105 MMAD1109
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA bV M M A m 3 o/"d M o n o lith ic D io de A rra y s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-sw itching
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MMAD130/D
51A-03
MMAD130
MMAD1103
MMAD1107
MONOLITHIC DIODE ARRAYS
MMAD1105
MMAD1109
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Untitled
Abstract: No abstract text available
Text: , O N Y 1_ S L D High Power Red Laser Diode Description 1 2 3 1 V L Preliminary Package Outline The SLD1231VL is a short wavelength high power Unit : mm M-274 laser diode, created as a light source for the nextgeneration high density magneto-optical discs.
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SLD1231VL
M-274
685nm)
B3fl23fl3
SLD1231VL
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Diode Marking ZM Motorola
Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:
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1SMB5913A/D
1SMB5913A,
1SMB5956A,
1SMB5913A
241Sb
C6459&
Diode Marking ZM Motorola
DIODE MOTOROLA 39A
ZENER 18-2 5t
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1N5628
Abstract: 12115X marking AB SOD123 1N5828
Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5826
1N5827
1N5828
1N582S
1N5828
DO-35
1N5628
12115X
marking AB SOD123
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12v dc full wave bridge rectifier
Abstract: 5000 watt full bridge design 1N5S34
Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5832
1N5834
1N5S34
12v dc full wave bridge rectifier
5000 watt full bridge design
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BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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Untitled
Abstract: No abstract text available
Text: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.
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SL5500
SL5501
SL5511
OT212.
MSA048-2
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1n4573
Abstract: 1n4573a die 1N827A 1n4579 10823a 1C45 1n829 1n4573 die
Text: M O T O R O L A SC O I O D E S / O P T O l 6367255 MOTOROLA SC 34 <D I O D E S / O P T O DE | b3fci7S55 0 0 3 0 1 1 0 3 | 34C 38118 T -//- D 0 5" SILICON ZENER DIODE DICE continued) 1C821 & 1C4565 — SERIES DIE NO. LINE SOURCE — DZD400 This die provides performance equal to or better than that
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b3fci7S55
DZD400
1C821
1C4565
1N821
1N829
1N4565
1N4584
1N4765
1N4784
1n4573
1n4573a die
1N827A
1n4579
10823a
1C45
1n4573 die
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1117T
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBR150/D SEM ICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers MBR150 MBR160 . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with
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MBR150/D
b3b72SS
------------------MBR150/D
1117T
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BUT14
Abstract: SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
Text: MOTOROLA SC XSTRS/R F la E D | 33t3755 M OOflMaM1! fa | MOTOROLA S E M IC O N D U C T O R BUT14 TECHNICAL DATA 25 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 850 VOLTS
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33t3755M
BUT14
BUT14
SAF 1092
2sc 3402 transistor
HN 554 transistor
100-C
3399 transistor
motorola darlington power transistor
TRANSISTOR 2SC 635
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diode t88
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAV70WT1/D SEMICONDUCTOR TECHNICAL DATA BAV70WT1 Dual Switching Diode M o to ro la P re ferre d D e vic e ANODE • N— ° 1 CATHODE -N - 2 -O MAXIMUM RATINGS T a = 2 5 ° C Symbol Max Unit Reverse Voltage Rating Vr 70
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BAV70WT1/D
BAV70WT1
SC-70/80T-323
bav70W
diode t88
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAL99LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAL99LT1 ANODE 3 O CATHODE O 2 MAXIMUM RATINGS Rating Symbol Value Unit Vr 70 Vdc if 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R o ja 556 °C/W Pd 300 mW 2.4 mW/°C
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BAL99LT1/D
BAL99LT1
15bbk
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SG DIODE
Abstract: ic Thyristor firing circuit GT01000 MGT01200 GTO MOTOROLA
Text: M O T O R O L A SC DIODE S/ OP TO h3b7'2SS GQail03 =| • 2SE D r - a s w f MGT01000 MGT01200 Gate Turn-Off Thyristors The GTO is a fam ily of asym m etric gate turn-off thyristors designed prim arily for dc pow er sw itching applications such as m otor drives, sw itching pow er supplies,
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GQail03
b3b75S5
MGT01000
MGT01200
MGT01000
1000M
MGT01200
1200M,
MGT01400
1400M,
SG DIODE
ic Thyristor firing circuit
GT01000
GTO MOTOROLA
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA SC D I O D E S / O P T O I M0T7 L.3b7255 0 0 0 7 3^ 5 G3S bflE » Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information D ual S e rie s S w itc h in g D iode BAV199LT1 Motorola Preferred Device This switching diode has the following features:
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3b7255
BAV199LT1/D
BAV199LT1
BAV199LT1
BAV199LT3
inch/10
OT-23
O-236AB)
2PHX33713F-0
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MJ10006
Abstract: No abstract text available
Text: I tBbTESM MOTOROLA TECHNICAL DATA D e s ifjn o r s D a ta S h e e t 10 A M P E R E NPN SILICON SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE POWER DARLINGTON TRANSISTORS T he M J1 0 0 0 6 an d M J1 0 0 0 7 Darlington transistors are design ed
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MJ10006
MJ10007
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0C45
Abstract: MBR2530CTL
Text: Order this data sheet by M BR2535CTL/D MOTOROLA SEMICONDUCTOR T-03~M TECHNICAL DATA M O T O R O L A SC D I O D E S / O P T O 3TE D O L>3b755S 0 0 0 3 0 5 0 0 C 1 M 0 T 7 MBR2535CTL MBR2530CTL Switchmode Power Rectifiers . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode.
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BR2535CTL/D
3b755S
R2530CTL
0C45
MBR2530CTL
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AD130
Abstract: diode array MMAD1107 MMAD130 MMAD1105 MMAD1106 MMAD1109 MONOLITHIC DIODE ARRAYS AD1107
Text: MOTOROLA SC XSTRS/R 12E F ^ b3fe?c!54 T-Ol -01 0 QAUA3 1 7 g MMAD13Q MMADI 103 thru MMAD1107 MMAD1109 CASE 751A-02 SO-14 M A X IM U M RATINGS Sym bol Value Unît vrm 50 Vdc Steady-State Reverse Voltage Vr 40 Vdc Peak Forward Current 25°C 'F M 500 mA Continuous Forward Current
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MMAD13Q
MMAD1107
MMAD1109
51A-02
SO-14
SO-14
AD130
MMAD1106
MMAD1103
AD130
diode array
MMAD130
MMAD1105
MMAD1106
MMAD1109
MONOLITHIC DIODE ARRAYS
AD1107
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MTP3055EL
Abstract: MTP-3055EL 221A-06 AN569
Text: MO T O R O L A SC XSTRS/R F bflE D • b3fc.725M GGTÖßS? TD7 MOTOROLA ■ i SEMICONDUCTOR TECHNICAL DATA M TP3055EL Designer's Data Sheet Motorola Preferred Device T M O S IV P o w er Field E ffe c t T ransistor N-Channel Enhancem ent-Mode Silicon Gate
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MTP3055EL
MTP3055EL
MTP-3055EL
221A-06
AN569
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irf 4110
Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 IRF630 IRF631 irf 1962 SS-AT9
Text: MOTOROLA SC X S T R S /R F IME D II b3fej?554 0 0 0 ^ ^ 3 3 MOTOROLA I • SEMICONDUCTOR TECHNICAL DATA IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed fo r low
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IRF630
IRF631
IRF632
IRF630,
IRF632
irf 4110
for IRF630
1RF631
IRF6322
MOTOROLA IRF630
MTM8N20
irf 1962
SS-AT9
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2N6823
Abstract: transistor 3s4 2n6823 transistor AN569 motorola mosfet
Text: MOTOROLA SC X S T R S /R 1HE D I F b3fc>?254 G O f l i b m T 3 | S MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6823 Designer's Data Sheet Pow er Field Effect Transistor N -C h an n el Enh an cem en t-M ode S ilic o n G ate T M O S TMOS POWER FETs 3 AMPERES ros on = 2 8 OHMS
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2N6823
i3iq005k8
T0-204AA
O-204AA
transistor 3s4
2n6823 transistor
AN569
motorola mosfet
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221A-06
Abstract: AN569 MTP10N25 TMOS Power FET
Text: M O T O R O L A SC CX S T R S / R F bflE D • b3fc,7ES4 GO'iflTBl 557 « n O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0.45 OHM
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b3b72S4
MTP10N25
221A-06
AN569
MTP10N25
TMOS Power FET
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