BAX53
Abstract: BAX52 fast recovery epitaxial diode Bridge bax 53
Text: BAX 52 BAX 53 SILICON PLANAR DIODES U L T R A F A S T D IO D E B R ID G E A S S E M B L IE S The BAX 52 and BAX 53 are silicon planar epitaxial diode bridges in Jedec T O -12 and TO-72 metal cases respectively. They are designed for very high speed applications.
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BAX52
BAX52
BAX53
BAX53
fast recovery epitaxial diode Bridge
bax 53
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BAX73
Abstract: BAX71 ta 7176 BAX56 diode T-77 BAX65 BAX62 DIODE 73 BAX57 BAX58
Text: BAX 56to 73 SILICON PLANAR DIODES U L T R A FAST C OM M ON A N O D E A N D C O M M O N C A TH O D E A R R A Y S The BAX 56 to BAX 73 are silicon planar epitaxial diode arrays in JedecTO-72, TO-77 or TO-96 metal cases*. They are designed for high speed applications.
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0-202S
BAX56
BAX65
BAX57
S-W78
BAX66
BAX58
BAX67
BAX59
BAX68
BAX73
BAX71
ta 7176
diode T-77
BAX62
DIODE 73
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marking BAX
Abstract: BAX marking E6327 Q67000-S280 DIN IEC 68-1 Diode BAx
Text: FRED Diode BAX 280 Preliminary Data ● VRRM 1000 V ● IFRMS 5.5 A ● trr 55 ns ● Soft recovery characteristics Type Ordering Code Tape and Reel Information BAX 280 Q67000-S280 E6327: 1000 pcs/reel Pin Configuration 1 2 3 4 not con- A nected C A Marking
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Original
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Q67000-S280
E6327:
OT-223
50-Hz
marking BAX
BAX marking
E6327
DIN IEC 68-1
Diode BAx
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BAX12
Abstract: 74127
Text: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic
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BAX12
BAX12
74127
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BAY41
Abstract: BAY43 bax12 BAY42
Text: COMPUTER DIODE BAY41-BAY43 BAY60 BAX 12 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated This series offers Metallurgical Bonding and is very popular for general purpose switching applications. • 00-35 ABSOLUTE MAXIMUM RATINGS. AT 25°C
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BAY41-BAY43
BAY60
BAY41
BAY42
BAY43
BAX12
225mA
bax12
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S279
Abstract: IGBT Transistor bsp280 BAX marking bipolar transistor td tr ts tf marking BAX E6327 Q67000-S279
Text: IGBT Transistor BSP 280 Preliminary Data ● ● ● ● ● ● ● ● VCE 1000 V I C 2.5 A N channel MOS input voltage-controlled High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel
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Q67000-S279
OT-223
E6327:
S279
IGBT Transistor
bsp280
BAX marking
bipolar transistor td tr ts tf
marking BAX
E6327
Q67000-S279
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Diode BAY 61
Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12
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3AX11/IO
3AX11/IU
11/ilo
3AX11/IÃ
3AX11
BAX11
79/III
79/IV
26/II
Diode BAY 61
Diode BAY 55
Diode BAY 80
BXY 36 DIODE
diode sax 34
bxy26
Diode BAY 68
Diode BAY 23
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Diode BAY 46
Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j
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1N456
BAW21A
1N456
BAX12
CB-102)
CB-104)
Diode BAY 46
Diode BAY 45
Diode BAY 21
Diode BAY 80
Diode BAY 19
BAY 73 diode
Diode BAY 41
Diode BAY 72
Diode BAY 42
bav 21 diode
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BAV105
Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30
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DO-35
DO-34
OD123
OD80C
OD110
OT143
OT323/
BAW62/
BAV21
BAV10
BAV105
BAS561
Diode BAx
1PS181
1PS184
1PS193
1PS226
philips 1n4148 DIODE
"Philips Semiconductors" BAX DO-35
Diode BAX 12
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Diode BAY 46
Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j
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1N456
BAW21A
CB-26)
CB-127
Tamb100Â
Tamb125Â
Tamb60Â
CB-127
CB-127.
Diode BAY 46
1N 4000 diode
1N3069
BA224-220
BAV45
BAY41
Diode BAY 41
Diode BAY 80
BAX12
SFD49
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Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
CB-127.
Diode BAY 71
Diode BAY 45
Diode BAY 46
Diode BAY 88
BAW21
ESM 3070
1n 4009 diode
BAY67
SFD49
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Diode BAY 46
Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
SFD79
CB-26)
baw55
CB-127
CB-127.
Diode BAY 46
Diode BAY 80
Diode BAY 74
Diode BAY 45
Diode BAY 19
diode BAW55
BAY 73 diode
1N3595
Diode BAY 21
Diode BAY 41
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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Untitled
Abstract: No abstract text available
Text: 2. E q u i va l e n t . C i r c u i i zrr-L -t— OE 2 Ò "C urrent Control C i r c u i t C 1 Ò Ò B 3 1 A b s o l u t e Maxi auro R a t i n g s ( T.i-2r>C ) d E«D £- sS £> B 12 C o l l c c t o r -crai t i e r v o l t a g e ì 1 5 E c = S o-< *?>.e
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MT5F49S9
450K/ns
MT5F4989
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PDF
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Untitled
Abstract: No abstract text available
Text: «COL Ratings and characteristics of Fuji I GBT 22367^2 0 Q02421 2 ÔT M BT Module 2 . Equivalent Circuit (B 1 ) (B 2 ) 3 . Absolute Haxiaua Katings ( Tj =25 *C) This m ateria! and the information herein is the property o f Fuji Electric C o ,Ltd .Th e y shall be neither rep ro d u ced , c o p io c .
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Q02421
G002424
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PDF
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Z3.3
Abstract: No abstract text available
Text: I R atin g s and c h a r a c t e r is t ic s of F u ji I G BT 2 M B I 5 0 J —* 0 6 0 1. M BT Module (TEN TAT IVE ) O u tlin e Drawing U n it : sa * Isolation Voltage : AC2500V 1minute Z- <¿5.4 •O o Q C : |ii lí ■C3 I ! -I o , t .xH 3 <ï io i l !>;
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50A/ps
Z3.3
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PDF
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Untitled
Abstract: No abstract text available
Text: n o m i Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS524503 Single Darlington Transistor Module 30 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Symbol KS524503 Units Junction Temperature
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KS524503
Amperes/600
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PDF
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Untitled
Abstract: No abstract text available
Text: tClRi'J tSzd PgflP — — — - £ . 9-, ? ^ - ^PH ¿ *?-3 /4 . Van \ tn .^«t, A»* This materia and the information herein is the property of Fuji Electric Co,Ltd.They shall be neither reproduced, copiud, lont. or disclosed in any way w hatsoever for the use of any
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DQQ2435
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PDF
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Untitled
Abstract: No abstract text available
Text: • ^ 5 3 1 3 1 0Q2b3bQ 582 H A P X N AMER PHILIPS/DISCRETE BAX12 b*lE » _y \ _ SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable of absorbing transients repetitively. It is a fast,
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OCR Scan
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BAX12
DO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: I 2. Equivalent Circuit CBÍ 3. CB2) Absol ut e Maxi mura Ra t i n g s Symbols I teas This m a te ria l and the inform ation herein is the p 'O p e rty o f Fuji Electric Co„Ltd They shall be neither re p ro d u c e d , c o p ie d , le nt, or disclosed in any way w h a ts o e v e r for the use of a n y
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MT5F5158
GDD2431
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PDF
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Untitled
Abstract: No abstract text available
Text: Ratings and characteristics of Fuji I G B T M B T 2 M B I Y 5 — 6 Module (TENTATIVE) 1. Outline Drawing Unit : BB * Isolation ; UJ Voltage : AC 2500 V 1 lim ite Tab type terminals (AMP No.110 equivalent) 9 3 -M 5 DATE CHECKED < 7o,V\ bflE _ I APPROVED
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MT5F4995
MT5F4905
EE3A71B
000E7E1
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PDF
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2
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BAX12
F1000
1N4001
1N4002
1N4003
1N4004
1N4006
1N4007
Diode 1N4007 DO-7 Rectifier Diode
1N40075
BYX/400
1N4007 RECTIFIER DIODE
4007 uf 1200
BAX12
BYW52
BYW53
BYW54
BYW55
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PDF
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BAX BOARD
Abstract: TVS RS422
Text: TVS T ra n s ie n t Voltage SupDnessons Low C ap acitan ce □ i o de A r r a y DESCRIPTION This Bi-directional Diode Array TVS family is a series of low capacitance silicon transient suppressors for use in applications where voltage transients can permanently damage voltage sensitive compo
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