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    DIODE BAY 12 Search Results

    DIODE BAY 12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BAY 12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12N035

    Abstract: 12N035T Bay Linear 12N035S
    Text: Bay Linear Inspire the Linear Power 12N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications


    Original     		PDF 12N035 O-220 12N035 12N035T Bay Linear 12N035S

    E172395

    Abstract: David chi
    Text: CUSTOMER: DESCRIPTION: MODEL NO.: DAVID NO.: ISSUE DATE .: ISSUE EDITON .: AC ADAPTOR DP48-1201000 C169-75 2010/04/08 A1 FOR APPROVAL SHEET 1.According to our ISO-9002 system, We cannot process your P.O before you approve this specification by signing, stamping and returning the“Declaration of


    Original     		PDF DP48-1201000 C169-75 ISO-9002 E172395 David chi

    MUR840

    Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
    Text: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H Y P E R F A S T RECTIFIERS Intersil Corporation provides the silicon advantage in a burgeoning market


    Original     		PDF FO-011 O-218 O-204AA O-220 Rating/10 MS012AA O-262, O-263 O-264X MUR840 ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420

    50N03

    Abstract: Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32
    Text: Bay Linear Linear Excellence 50N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications


    Original     		PDF 50N035 O-220 50N03 Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32

    60N03

    Abstract: 60N035 60N035S Bay Linear 60N035T
    Text: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications


    Original     		PDF 60N035 O-220 60N03 60N035 60N035S Bay Linear 60N035T

    power supply IRF830 APPLICATION

    Abstract: IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45
    Text: Bay Linear Linear Excellence IRF830 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all


    Original     		PDF IRF830 O-220 power supply IRF830 APPLICATION IRL830T IRL830 BAY 45 BAY 61 MOSFET 400V TO-220 IRF830 IRL830S Diode BAY 18 Diode BAY 45

    Diode BAY 55

    Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
    Text: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications


    Original     		PDF 4N600 O-220 Diode BAY 55 Bay Linear 4N600S 4N600T 4N6003600 DSA0083437

    IRF540 d2 package

    Abstract: IRF540 application mosfet irf540 IRL540T Diode BAY 72 IRF540 IRL540S linear mosfet
    Text: Bay Linear Linear Excellence IRF540 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all


    Original     		PDF IRF540 O-220 IRF540 d2 package IRF540 application mosfet irf540 IRL540T Diode BAY 72 IRF540 IRL540S linear mosfet

    MOSFET 400V TO-220

    Abstract: IRF820 IRL820S IRL820T
    Text: Bay Linear Linear Excellence IRF820 POWER MOSFET Advance Information Description Features • • • • • The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.


    Original     		PDF IRF820 O-220 MOSFET 400V TO-220 IRF820 IRL820S IRL820T

    IR 822P

    Abstract: B8226 B822P 8227 hsms2827 b8228 B822R hsms-2827 cross reference B822 B 8227 Schottky Quad
    Text: Bay Linear Inspire the Linear Power B8220 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features This specific line of Schottky diodes were specifically designed for both digital and analog applications. This series includes a wide range of specifications and


    Original     		PDF B8220 B822x IR 822P B8226 B822P 8227 hsms2827 b8228 B822R hsms-2827 cross reference B822 B 8227 Schottky Quad

    LM2576 step up converter

    Abstract: lm2576 current mode lm2576 application data LM2576J-X B2576 LM2576 LM2576 APPLICATION Diode BAY 93 925 pin-compatible LM2576 BOOST CONVERTER
    Text: Bay Linear Inspire the Linear Power LM2576 3.0A Step Down Switching voltage Regulator Adjustable & Fix Output Description Features The Bay Linear LM2576 contains fixed and adjustable switching voltage regulators that require a minimum of external components. All circuitry necessary to build a


    Original     		PDF LM2576 LM2576 LM2576 step up converter lm2576 current mode lm2576 application data LM2576J-X B2576 LM2576 APPLICATION Diode BAY 93 925 pin-compatible LM2576 BOOST CONVERTER

    LM2576 step up converter

    Abstract: lm2576 current mode lm2576 application data LM2576 LM2576 APPLICATION 12V 5A adjustable regulator led lm2576 LM2576 BOOST CONVERTER Diode BAY 93 B2575
    Text: Bay Linear Inspire the Linear Power 3.0A Step Down Switching voltage Regulator LM2576 Adjustable & Fix Output Preliminary Information Description Features The Bay Linear LM2576 contains fixed and adjustable switching voltage regulators that require a minimum of


    Original     		PDF LM2576 LM2576 LM2576 step up converter lm2576 current mode lm2576 application data LM2576 APPLICATION 12V 5A adjustable regulator led lm2576 LM2576 BOOST CONVERTER Diode BAY 93 B2575

    LM2575 step up converter

    Abstract: B2575 LM2575 LM2575-5 LM25755 LM2575-5.0 LM2575 to 63 LM2575T-X Bay Linear LM2575 BOOST CONVERTER
    Text: Bay Linear Inspire the Linear Power LM2575 1.0A Step Down Switching voltage Regulator Adjustable & Fix Output Description Features The Bay Linear LM2575 contains fixed and adjustable switching voltage regulators that require a minimum of external components. All circuitry necessary to build a


    Original     		PDF LM2575 LM2575 LM2575 step up converter B2575 LM2575-5 LM25755 LM2575-5.0 LM2575 to 63 LM2575T-X Bay Linear LM2575 BOOST CONVERTER

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


    Original     		PDF LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S

    Diode BAY 21

    Abstract: Diode BAY 46 ir 0588
    Text: A E G 17 E CORP D aaa'mab 3 q q qt t s s BAY 135 TTIILIIMllfillKiKl electronic Creative Technologies 1 01 0 Silicon Planar Diode " - - ? Applications: Protection circuits, delay circuits Features: • Very low reverse current Dimensions in mm 9i io e Cathode


    OCR Scan     		PDF

    Diode BAY 54

    Abstract: No abstract text available
    Text: Te m ic BAY 135 TELEFUNKEN Semiconductors Silicon Planar Diode Features • Very lo w reverse current Applications P rotection circu its, d e la y circu its Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions Peak reverse voltage, non repetitive


    OCR Scan     		PDF

    Diode BAY 61

    Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
    Text: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12


    OCR Scan     		PDF 3AX11/IO 3AX11/IU 11/ilo 3AX11/IÃ 3AX11 BAX11 79/III 79/IV 26/II Diode BAY 61 Diode BAY 55 Diode BAY 80 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23

    Diode BAY 46

    Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
    Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j


    OCR Scan     		PDF 1N456 BAW21A 1N456 BAX12 CB-102) CB-104) Diode BAY 46 Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode

    Diode BAY 46

    Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j


    OCR Scan     		PDF 1N456 BAW21A CB-26) CB-127 Tamb100Â Tamb125Â Tamb60Â CB-127 CB-127. Diode BAY 46 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49

    Diode BAY 46

    Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
    Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a


    OCR Scan     		PDF 1N456 BAW21A SFD79 CB-26) baw55 CB-127 CB-127. Diode BAY 46 Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41

    Diode BAY 71

    Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a


    OCR Scan     		PDF 1N456 BAW21A BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 CB-127. Diode BAY 71 Diode BAY 45 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49

    Diode BAY 19

    Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
    Text: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V


    OCR Scan     		PDF BAW21 Diode BAY 19 Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode

    Diode BAY 55

    Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
    Text: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7


    OCR Scan     		PDF U-26-Â Diode BAY 55 Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86

    Diode BAY 54

    Abstract: 68W35 telefunken diodes 914 Diode BAY 12 AL6G BAY69 Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69
    Text: TELEFUNKEN ELECTRONIC 17E D TllUllFMIMKilifl electronic • â'îSOO'ïfc. O O O ^ M S 7 ■ AL66 BAY 68 • BAY 69 Creative Technologies T-OZ-0°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm •110 « / Cathoda \ [| - 11-


    OCR Scan     		PDF r-03-Ã Q0GT74? T-03-09 Ij-100Â Diode BAY 54 68W35 telefunken diodes 914 Diode BAY 12 AL6G BAY69 Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69