TCA4401
Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
Text: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,
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WATKINS JOHNSON mixer
Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single
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TAA761A
Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Text: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,
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LD261
BPX81.
TAA761A
TDA4050B
BPW32
TAA761
FLH101
TCA335A
tda4050
TCA965 equivalent
tca965
transistor bc238
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h569-445
Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Text: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:
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H569-445
h569-445
H569-445 G1
FAJ 38
ED83127-30
ED83127-30 G-D
T-83150-30
848258679
BDFB
ED83127
G61A
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dual photodiode
Abstract: 2 Wavelength Laser Diode ADN2841 automatic laser power control diode IN 5402 FU-445 laser diodes driver
Text: ADN2841—Continuous Rate 2.7 Gbps Laser Diode Driver with Dual-Loop Control Features • Closed-loop control of the laser diode average power and extinction ratio • Does not require any data formatting • Data rates from 50 Mbps to 2.7 Gbps 80 ps typical rise time
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ADN2841--Continuous
ADN2841
H02412-5-2/03
F-92182
dual photodiode
2 Wavelength Laser Diode
automatic laser power control
diode IN 5402
FU-445
laser diodes driver
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HA17902AP
Abstract: HA17902 HA17902A HA17902AFP HA17902ARP HA17902AT HA17902AR
Text: HA17902A Series Quad Operational Amplifier REJ03D0686-0200 Rev.2.00 Mar 10, 2006 Description HA17902A series are quad operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely used to control equipments.
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HA17902A
REJ03D0686-0200
100Vio)
HA17902AP
HA17902
HA17902AFP
HA17902ARP
HA17902AT
HA17902AR
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HA17904
Abstract: HA17904A HA17904AFP HA17904APS HA17904ARP HA17904AT PRDP0008AF-B PRSP0008DE-B
Text: HA17904A Series Dual Operational Amplifier REJ03D0689-0200 Rev.2.00 Mar 10, 2006 Description HA17904A series are dual operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely applied to control equipments and to general use.
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HA17904A
REJ03D0689-0200
HA17904
HA17904AFP
HA17904APS
HA17904ARP
HA17904AT
PRDP0008AF-B
PRSP0008DE-B
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HVC145
Abstract: No abstract text available
Text: HVC145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0423-0300 Previous: ADE-208-1500B Rev.3.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 Ω max)
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HVC145
REJ03G0423-0300
ADE-208-1500B)
Unit2607
HVC145
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ha17324a
Abstract: HA17324 HA17324 equivalent 8 pin HA17324A application HA17324AF HA17324ARP HA17324AT PRDP0014AB-B
Text: HA17324A Series Quad Operational Amplifier REJ03D0674-0400 Rev.4.00 Mar 10, 2006 Description HA17324A series are quad operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely used to control equipments.
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HA17324A
REJ03D0674-0400
100Vio)
HA17324
HA17324 equivalent 8 pin
HA17324A application
HA17324AF
HA17324ARP
HA17324AT
PRDP0014AB-B
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HA17358
Abstract: HA17358A HA17358AF HA17358ARP HA17358AT PRDP0008AF-B PRSP0008DD-C PRSP0008DE-B HA17358 603
Text: HA17358A Series Dual Operational Amplifier REJ03D0676-0400 Rev.4.00 Mar 10, 2006 Description HA17358A series are dual operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely applied to control equipments and to general use.
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HA17358A
REJ03D0676-0400
HA17358
HA17358AF
HA17358ARP
HA17358AT
PRDP0008AF-B
PRSP0008DD-C
PRSP0008DE-B
HA17358 603
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schematic diagram inverter 12v to 24v 30a
Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
Text: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the
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2364E
2364F
2364P
2364P-5
schematic diagram inverter 12v to 24v 30a
inverter 5kva circuit diagram
LB1542
2kva inverter circuit diagram
dc to ac inverter schematic diagram
inverter 5kva
digitrip 310 time curve
sim 900A
ac Inverter schematics 10 kw
Allen-Bradley 1336
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HVU145
Abstract: No abstract text available
Text: HVU145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0437-0200 Previous: ADE-208-1508A Rev.2.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C =0.45 pF max) Low forward resistance. (rf = 1.8 Ω max)
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HVU145
REJ03G0437-0200
ADE-208-1508A)
Unit2607
HVU145
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HVD141
Abstract: No abstract text available
Text: HVD141 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0427-0100 Previous: ADE-208-1087 Rev.1.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.82 pF max) Low forward resistance. (rf = 0.8 Ω max)
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HVD141
REJ03G0427-0100
ADE-208-1087)
Unit2607
HVD141
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HVL145
Abstract: No abstract text available
Text: HVL145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0434-0100 Previous: ADE-208-1597 Rev.1.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 Ω max)
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HVL145
REJ03G0434-0100
ADE-208-1597)
Unit2607
HVL145
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Untitled
Abstract: No abstract text available
Text: FSYC264D, FSYC264R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 34A, 250V, rDS ON = 0.080Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
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FSYC264D,
FSYC264R
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je 3055
Abstract: RAYTHEON RMWM38001 RMWP38001
Text: RMWM38001 38 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,
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RMWM38001
RMWM38001
je 3055
RAYTHEON
RMWP38001
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S400
Abstract: lps 256
Text: 1394 Open HCI Systems Neil Morrow Product Development Mixed Signal PCIbus Solutions Texas Instruments, Inc. Presentation Overview 1394 Open HCI systems What, Where, Why of 1394 Open HCI OHCI hardware choices What to look for in Open HCI devices A look at Open HCI power management
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IEEE1394
com/pub/chrptech/1394ohci
io/1394/P1394a
S400
lps 256
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FSj264
Abstract: No abstract text available
Text: FSJ264D, FSJ264R TM Data Sheet February 2001 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs File Number 4340.3 Features • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSJ264D,
FSJ264R
FSj264
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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