bc547 philips
Abstract: NPN transistor BC547 as a diode Application Note tda5142 R27 transistor BC547 r17a transistor t13 mosfet current limiter BD438 equivalent BD680
Text: Application Note I C s f o r M o t o r C o n t r o l TDA5142 output driver stages for supply voltages up to 30 V Report No: EIE/AN93013 R. Galema Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Motor Control TDA5142 Date : 27 June 1995
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TDA5142
EIE/AN93013
TDA5142
TDA514x
sta43
BZX79C8V2)
BYV10-40
bc547 philips
NPN transistor BC547 as a diode
Application Note tda5142
R27 transistor
BC547
r17a
transistor t13
mosfet current limiter
BD438 equivalent
BD680
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Untitled
Abstract: No abstract text available
Text: TVS Connectors J MIL-DTL-38999 Series III Type TVS Connectors TVS Selection Chart Table III: TVS Selection Chart Diode Reverse Breakdown Voltage V Max Reverse Leakage (Ua) Test Voltage Standoff Current Min Max 1,500W 3,000W 5,000W Code Voltage (V) (MA) 5.0
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MIL-DTL-38999
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CM800DZB-34N
Abstract: 1000v bipolar transistor hvigbt diode
Text: MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZB-34N ● IC . 800A ● VCES . 1700V
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CM800DZB-34N
CM800DZB-34N
1000v bipolar transistor
hvigbt diode
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZB-34N ● IC . 800A ● VCES . 1700V
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CM800DZB-34N
500A/Â
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tde3247dp
Abstract: ultrasonic proximity detector TDE3247D TDE1798DP VN808 tde1767dp L6374FP TDE1708 tde1707b VIPower
Text: Intelligent power switches VIPower technology PENTAWATT Intelligent power switches I.P.S. PPAK PowerSO-10 VN808/CM/SR Octal HSD SO-8 SO-20 Reference guide 160mΩ VN330SP Quad HSD 200mΩ VN340SP Quad HSD 200m VNQ860 Quad HSD 270mΩ VN540 Single HSD PowerSO-36
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PowerSO-10
VN808/CM/SR
PowerSO-36
SO-20
VN330SP
VN340SP
VNQ860
VN540
VN751
PowerSO-20
tde3247dp
ultrasonic proximity detector
TDE3247D
TDE1798DP
VN808
tde1767dp
L6374FP
TDE1708
tde1707b
VIPower
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CM1000E4C-66R
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000E4C-66R IC •······························································ 1000A
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CM1000E4C-66R
HVM-1055-F
HVM-1055-F)
CM1000E4C-66R
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0.6 um cmos process
Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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GB75DA120UP
Abstract: IGBT 75 D
Text: GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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GB75DA120UP
OT-227
2002/95/EC
18-Jul-08
GB75DA120UP
IGBT 75 D
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V
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CM800HC-66H
/-15V
600A/Â
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Untitled
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000E4C-66R IC •······························································ 1000A
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CM1000E4C-66R
HVM-1055-F
HVM-1055-F)
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CM800HC-66H
Abstract: r 1241 transistor
Text: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V
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CM800HC-66H
/-15V
CM800HC-66H
r 1241 transistor
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Untitled
Abstract: No abstract text available
Text: US2881 Bipolar Hall Switch – Very High Sensitivity Features and Benefits Application Examples Wide operating voltage range from 3.5V to 24V Very high magnetic sensitivity CMOS technology Chopper-stabilized amplifier stage Low current consumption Open drain output
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US2881
ISO14001
Feb/06
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Untitled
Abstract: No abstract text available
Text: US2882 Bipolar Hall Switch – Very High Sensitivity Features and Benefits Application Examples Wide operating voltage range from 3.5V to 24V Very high magnetic sensitivity CMOS technology Chopper-stabilized amplifier stage Low current consumption Open drain output
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US2882
ISO14001
Feb/06
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gb75da120up
Abstract: transistor d 1680 ultrafast igbt
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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GB75DA120UP
OT-227
E78996
2002/95/EC
18-Jul-08
gb75da120up
transistor d 1680
ultrafast igbt
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Untitled
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R IC •······························································ 1000A
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CM1000HC-66R
HVM-1061-B
HVM-1061-B)
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mitsubishi inverter air conditioning
Abstract: CM1200HC-34H
Text: MITSUBISHI HVIGBT MODULES CM1200HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-34H ● IC . 1200A ● VCES . 1700V
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CM1200HC-34H
12K/kW
20K/kW
/-15V
mitsubishi inverter air conditioning
CM1200HC-34H
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CM1200HG-66H
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HG-66H ● IC . 1200A ● VCES . 3300V
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CM1200HG-66H
/-15V
CM1200HG-66H
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EN60749-15
Abstract: JESD22-A113 JESD22-B102 JESD22-B106 US2884
Text: US2884 Bipolar Hall Switch – Very High Sensitivity Features and Benefits Application Examples Wide operating voltage range from 3.5V to 24V Very high magnetic sensitivity CMOS technology Chopper-stabilized amplifier stage Low current consumption Open drain output
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US2884
US2884
ISO14001
Jan/06
EN60749-15
JESD22-A113
JESD22-B102
JESD22-B106
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Untitled
Abstract: No abstract text available
Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package
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OT-227
2002/95/EC
OT-227
18-Jul-08
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CM1600HC-34H
Abstract: mitsubishi inverter air conditioning igbt mitsubishi mitsubishi The label version
Text: MITSUBISHI HVIGBT MODULES CM1600HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1600HC-34H ● IC . 1600A ● VCES . 1700V
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CM1600HC-34H
/-15V
10K/kW
17K/kW
CM1600HC-34H
mitsubishi inverter air conditioning
igbt mitsubishi
mitsubishi The label version
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM1200HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-34H ● IC . 1200A ● VCES . 1700V
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CM1200HC-34H
12K/kW
20K/kW
/-15V
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2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Text: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1
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5965-7732E
5968-2348E
2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM
8 pin IC 34063
44xx
INA-10386
HP RF TRANSISTOR GUIDE
ATF 26886
2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM
Rf detector HSMS 8202
ina series
305xx
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but34
Abstract: Motorola Bipolar Power Transistor Data darling
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 Designer's Data Sheet 50 AMPERES NPN SILICON POWER DARLINQTON TRANSISTOR 850 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT34 Darlington transistor Is designed for high-voltage, high-speed, power
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BUT34
BUT34
Motorola Bipolar Power Transistor Data
darling
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OL35
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS S AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m ltter Diode and B uilt-in E fficient A ntisaturation N etw ork
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MJE18004D2
MJE18004D2
OL35
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