TYN616
Abstract: 100-6 scr Transistor 2p4m SCR 2P4M
Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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O-202
TS820
60/16A
O-220
BT151
75/23A
TYN616
100-6 scr
Transistor 2p4m
SCR 2P4M
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transistors C106
Abstract: TO202 package transistor 2p4m
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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O-202
60/16A
O-220
BT151
75/23A
transistors C106
TO202 package
transistor 2p4m
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TYN616
Abstract: TO-92 C106 c106 1006
Text: Products Search Home About Us Product News Application Message to Us Contact Us Corp.News | Industry News Products Category You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode
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O-202
60/16A
BT151
75/23A
O-220
BT152
75/35A
TYN616
TYN616
TO-92 C106
c106 1006
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IRF32N50k
Abstract: smd diode UF IRF32N50
Text: Uninterruptible Power Supply Table of Contents AC INPUT SECTION, Diode Bridge. 3 AC INPUT SECTION, Power Factor
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IRFP32N50K
IRFPS40N60K
O-247
LPE-3325
IRF32N50k
smd diode UF
IRF32N50
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Untitled
Abstract: No abstract text available
Text: DSI45-16A final for release V RRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 45 A 1.23 V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase bridge configurations
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DSI45-16A
O-247
sine180Â
DSI45
60747and
20090529a
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Untitled
Abstract: No abstract text available
Text: SPM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5287, Rev. C 600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE WITH SiC FREEWHEELING DIODE Features • SiC Free wheel diode – zero reverse recovery loss Isolated base plate Low thermal impedance
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SPM1005
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Untitled
Abstract: No abstract text available
Text: DSP45-16A VRRM = 1600 V I FAV = 2x 45 A VF = 1.23 V Standard Rectifier Phase leg Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase bridge configurations
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DSP45-16A
O-247
sine180Â
60747and
20090528a
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rectifier diode with piv of 30v
Abstract: power diode with piv of 30v 500 watt half bridge schematic DIODE RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING
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PFCM-1500C
rectifier diode with piv of 30v
power diode with piv of 30v
500 watt half bridge schematic
DIODE RECTIFIER BRIDGE
25A, 50V BRIDGE-RECTIFIER
PFCM-1500C
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MHPM7A16A120B
Abstract: PA 1515 transistor 440A-01
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM7A16A120B/D DATA Hybrid Power Module Integrated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output invefler, brake transistor/diode, current sense resistor and temperature sensor
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MHPM7A16A120B/D
MK145BP,
2PHXW255L+
MHPM7A16A120B
PA 1515 transistor
440A-01
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500 watt half bridge schematic
Abstract: 26A RECTIFIER BRIDGE 25A, 50V BRIDGE-RECTIFIER PFCM-1500M IR rectifier diode 100A 800V power diode with piv of 30v
Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE
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PFCM-1500M
500 watt half bridge schematic
26A RECTIFIER BRIDGE
25A, 50V BRIDGE-RECTIFIER
PFCM-1500M
IR rectifier diode 100A 800V
power diode with piv of 30v
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25A, 50V BRIDGE-RECTIFIER
Abstract: PFCM-1500M rectifier diode piv 26A RECTIFIER BRIDGE 600 watt amps schematic
Text: SENSITRON SEMICONDUCTOR PFCM-1500M TECHNICAL DATA DATA SHEET 4160, REV. – HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • HERMETIC PACKAGE • 600 VOLT, 0.21 OHM, 26.0A MOSFET • • RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING ULTRAFAST DIODE
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PFCM-1500M
25A, 50V BRIDGE-RECTIFIER
PFCM-1500M
rectifier diode piv
26A RECTIFIER BRIDGE
600 watt amps schematic
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500 watt half bridge schematic
Abstract: 25A, 50V BRIDGE-RECTIFIER PFCM-1500C
Text: SENSITRON SEMICONDUCTOR PFCM-1500C TECHNICAL DATA DATA SHEET 4159, REV. – NON-HERMETIC POWER FACTOR CORRECTION MODULE FEATURES: • • • • SEALED PACKAGE 600 VOLT, 0.21 OHM, 26.0A MOSFET ULTRAFAST DIODE RECTIFIER BRIDGE • 1500/3000 WATT PFC • HEAT SINK MOUNTING
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PFCM-1500C
500 watt half bridge schematic
25A, 50V BRIDGE-RECTIFIER
PFCM-1500C
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zvs flyback driver
Abstract: APT15F60B APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
zvs flyback driver
APT15F60B
APT15F60S
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT15F60B
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
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APT19F100J
Abstract: MIC4452
Text: APT19F100J 1000V, 19A, 0.46Ω Max, trr ≤290ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT19F100J
290ns
APT19F100J
MIC4452
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APT29F100B2
Abstract: APT29F100L MIC4452
Text: APT29F100B2 APT29F100L 1000V, 29A, 0.46Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT29F100B2
APT29F100L
270ns
O-247
APT29F100B2
APT29F100L
MIC4452
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APT19F100J
Abstract: APT29F100B2 MIC4452 748 DIODE
Text: APT19F100J 1000V, 19A, 0.46Ω Max, trr ≤270ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT19F100J
270ns
APT19F100J
APT29F100B2
MIC4452
748 DIODE
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APT19F100J
Abstract: MIC4452
Text: APT19F100J 1000V, 20A, 0.44Ω Max, trr ≤290ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT19F100J
290ns
APT19F100J
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT19F100J 1000V, 20A, 0.44Ω Max, trr ≤290ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT19F100J
290ns
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Untitled
Abstract: No abstract text available
Text: APT29F100B2 APT29F100L 1000V, 30A, 0.44Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT29F100B2
APT29F100L
270ns
O-264
APT29F100B2
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Untitled
Abstract: No abstract text available
Text: APT19F100J 1000V, 19A, 0.46Ω Max, trr ≤290ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT19F100J
290ns
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Untitled
Abstract: No abstract text available
Text: APT19F100J 1000V, 20A, 0.44Ω Max, trr ≤290ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT19F100J
290ns
OT-227
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APT29F100B2
Abstract: APT29F100L MIC4452
Text: APT29F100B2 APT29F100L 1000V, 30A, 0.44Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT29F100B2
APT29F100L
270ns
O-264
O-247
APT29F100B2
APT29F100L
MIC4452
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