melf diode code
Abstract: glass mini melf diode mini melf diode Schottky melf BAS85
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode
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BAS85
C-120
BAS85Rev121105E
melf diode code
glass mini melf diode
mini melf diode
Schottky melf
BAS85
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode
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BAS85
C-120
BAS85Rev121105E
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE CDLL4148 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a black band High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS
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CDLL4148
C-120
CDLL4148Rev
040505E
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MINI-MELF DIODE BLACK CATHODE
Abstract: CDLL4148 mini melf package details
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE CDLL4148 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a black band High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS
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CDLL4148
C-120
CDLL4148Rev
040505E
MINI-MELF DIODE BLACK CATHODE
CDLL4148
mini melf package details
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Hitachi DSA002748
Abstract: mark code e4 diode
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730 Z Rev 0 Dec. 1, 1998 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a
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HSB0104YP
ADE-208-730
HSB0104YP
Hitachi DSA002748
mark code e4 diode
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HSB0104YP
Abstract: Hitachi DSA0045 43E4
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730A Z Rev.1 Sep. 2000 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a
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HSB0104YP
ADE-208-730A
HSB0104YP
Hitachi DSA0045
43E4
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mark code e4 diode
Abstract: HSB0104YP
Text: HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730 Z Rev 0 Dec. 1998 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.
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HSB0104YP
ADE-208-730
mark code e4 diode
HSB0104YP
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1-14K
Abstract: N14 SMD CS1009 LM136 LT1009 LT1009CZ
Text: CS1009 CS1009 2.5 Volt Reference Description The CS1009 is a precision trimmed 2.500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming
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CS1009
CS1009
CS1009GZ
LT1009CZ
LM136Z-2
CS1009GD8
CS1009GDR8
CS1009GZ3
CS1009GZR3
1-14K
N14 SMD
LM136
LT1009
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solar panel blocking diode
Abstract: No abstract text available
Text: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode
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SPKT1845
MIL-STD-202E
O-220A
solar panel blocking diode
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Untitled
Abstract: No abstract text available
Text: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode
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SPKT1845
O-220A
MIL-STD-202E
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Untitled
Abstract: No abstract text available
Text: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode
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SPKT1845
O-220A
MIL-STD-202E
04MAX.
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1n6831
Abstract: 1N6826US 1N6826 MIL-PRF19500 1N6831US
Text: INCH-POUND MIL-PRF-19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments
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MIL-PRF-19500/670
1N6826,
1N6826US,
1N6831
1N6831US
MIL-PRF-19500,
1N6826US
1N6826
MIL-PRF19500
1N6831US
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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14kW
Abstract: smd LT1009 smd n10 1009C LT1009CZ N14 SMD CS-1009CZ LM136 LT1009 n8n6
Text: CS-1009 CS-1009 2.5 Volt Reference Description The CS-1009 is a precision trimmed 2.500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming
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CS-1009
CS-1009
CS-1009CZ
LT1009CZ
LM136Z-2
CS-1009CD8
CS-1009XD8
CS-1009XZ
14kW
smd LT1009
smd n10
1009C
N14 SMD
CS-1009CZ
LM136
LT1009
n8n6
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GL6ZS27
Abstract: No abstract text available
Text: PREPARED BY: DATE: I 1 SPEC.No. ELECTRONIC COMPONENTS GROUP SHARPCORPORATION I SPiXIFICATION DEVICE SPECIFICATION Ix996047 Opto-Ekctronic Devices Division FOR Light Emitting Diode MODEL No. GL6ZS27 1 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .
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Ix996047
GL6ZS27
DG996047
t02mm
GL6ZS27
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Untitled
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/118H 19 July 2007 SUPERSEDING MIL-PRF-19500/118G 22 June 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,
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MIL-PRF-19500/118H
MIL-PRF-19500/118G
1N483B,
1N485B,
1N486B,
1N5194,
1N5194UR,
1N5194US,
1N5195,
1N5195UR,
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1N6683
Abstract: 1N6685 1N6685US 1N6684 1N6640US
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 6 February 1998 METRIC MIL-PRF-19500/625A 6 November 1997 SUPERSEDING MIL-S-19500/625 15 July 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
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MIL-PRF-19500/625A
MIL-S-19500/625
1N6683,
1N6684,
1N6685,
1N6683US,
1N6684US,
1N6685US
1N6683
1N6685
1N6685US
1N6684
1N6640US
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/117P
MIL-PRF-19500/117N
1N962B-1
1N992B-1,
1N962BUR-1
1N992BUR-1,
1N962C-1
1N992C-1,
1N962CUR-1
1N992CUR-1,
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1N5623A
Abstract: 1N5615 1N5615US 1N5617 1N5617US 1N5619 1N5619US 1N5621 1N5621US 1N5623
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2008. INCH-POUND MIL-PRF-19500/429L 7 August 2008 SUPERSEDING MIL-PRF-19500/429K 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/429L
MIL-PRF-19500/429K
1N5615,
1N5617,
1N5619,
1N5621,
1N5623,
1N5615US,
1N5617US,
1N5619US,
1N5623A
1N5615
1N5615US
1N5617
1N5617US
1N5619
1N5619US
1N5621
1N5621US
1N5623
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Marking J30 SOT23
Abstract: 4014C g0750
Text: M O TO R O LA O rder this docum ent by MMBD1010LT1/D SEMICONDUCTOR TECHNICAL DATA L G r e e n i n e MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenUne™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:
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MMBD1010LT1/D
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MBD1010LT1/D
Marking J30 SOT23
4014C
g0750
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MBD-1005
Abstract: 1005LT
Text: MOTOROLA Order this docum ent by MMBD1005LT1/D SEMICONDUCTOR TECHNICAL DATA G L r e e n i n e MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the G reenLine P ortfolio o f devices with e n e rg y -c o n s e rv in g traits. This sw itching diode has the fo llo w in g features:
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MMBD1005LT1/D
MMBD1005LT1
MMBD2005T1
MMBD3005T1
2PHX34592F
MBD1005LT1/D
MBD-1005
1005LT
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MOC263
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically
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MOC263/D
RS481A
S5036.
2PHX34506P-O
MOC263
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SDM4066
Abstract: No abstract text available
Text: 836860 2 SOL ITRON D E VI CE S INC -r- 3 95D 02839 S0LITR0N DEVICES INC DF|ö3t.fibOE 000203^ S T W « » © i r © Ä ? Ä IL HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED DARLINGTON CHIP NUMBER WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE
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SDM4066,
SDM4067
SDM4066
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IN3070
Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. MIL-S-19500/169H 19 Mav 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,
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MIL-S-19500/169H
MIL-S-19500/169G
1N3070,
1N3070-1,
1N3070UR-1,
1N49M,
1N493A-1,
1N4938UR-1
MIL-S-19500.
JANCA4938)
IN3070
1N493A
1N3070 JANTX
HA 4016
1N3070
1N3070-1
1N3070UR-1
DIODE EJL
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